公开(公告)号：US5200388A

公开(公告)日：1993-04-06

申请号：US542151

申请日：1990-06-22

申请人： Hitoshi Abe ,  Tomohiro Nakamori

发明人： Hitoshi Abe ,  Tomohiro Nakamori

IPC分类号： C23C16/40 ,  H01L39/24

CPC分类号： C23C16/408 ,  H01L39/2441 ,  Y10S505/73 ,  Y10S505/734

摘要： An oxide superconducting film is formed by CVD. The starting material gas sources are Ba(DPM).sub.2, Ba(DPM).sub.2 .multidot.(THF).sub.n or Ba(DPM).sub.2 .multidot.(DMF).sub.n ; Cu(DPM).sub.2, Cu(DPM).sub.2 .multidot.(THF).sub.n or Cu(DPM).sub.2 .multidot.(DMF).sub.n ; and M(DPM).sub.3, M(DPM).sub.3 .multidot.(THF).sub.n or M(DPM).sub.3 .multidot.(DMF).sub.n, whereDPM is 2,2,6,6-tetramethyl-3,5-heptaneodianate represented by the chemical formula:CH.sub.3 C(CH.sub.3).sub.2 COCHCOC(CH.sub.3).sub.2 CH.sub.3THF is tetrahydrofuran represented by the chemical formula: ##STR1## DMF is dimethylformamide represented by the chemical formula:HCON(CH.sub.3).sub.2M is an element chosen from the list:Y, La, Nd, Pm, Sm, Eu, Er, Gd, Tb, Dy, Ho, Tm, Yb and Lu,and n is any integer. The starting gas sources are introduced into a growth tank after gasification together with at least one of the gases O.sub.2, O.sub.3, or N.sub.2 O, and the oxide film being formed on a substrate placed in said growth tank.

摘要翻译： 通过CVD形成氧化物超导膜。 原料气源为Ba（DPM）2，Ba（DPM）2x（THF）n或Ba（DPM）2x（DMF）n; Cu（DPM）2，Cu（DPM）2（THF）n或Cu（DPM）2×（DMF）n; 和M（DPM）3，M（DPM）3x（THF）n或M（DPM）3x（DMF）n，其中DPM是由化学式表示的2,2,6,6-四甲基-3,5-庚二糖酸 ：CH 3 C（CH 3）2 COCHCOC（CH 3）2 CH 3 THF是由以下化学式表示的四氢呋喃：DMF是由化学式：HCON（CH 3）2表示的二甲基甲酰胺。M是选自下列的元素：Y，La，Nd ，Pm，Sm，Eu，Er，Gd，Tb，Dy，Ho，Tm，Yb和Lu，n为任意整数。 将起始气体源与气体中的至少一种气体O 2，O 3或N 2 O一起气化，并且氧化膜形成在置于所述生长槽中的衬底上，并引入到生长槽中。

公开(公告)号：US4849605A

公开(公告)日：1989-07-18

申请号：US167241

申请日：1988-03-11

申请人： Tomohiro Nakamori ,  Taiji Tsuruoka ,  Susumu Shibata ,  Takashi Kanamori

发明人： Tomohiro Nakamori ,  Taiji Tsuruoka ,  Susumu Shibata ,  Takashi Kanamori

IPC分类号： B41J2/345

CPC分类号： B41J2/345

摘要： A heating resistor includes a conductive material, and an electrically insulating material made of a mixture of silicon carbide (SiC) and carbon (C) having a carbon content of not less than 3 wt % based on the mixture. The resistor is formed by sputtering of a target of the conductive material and the electrically insulating material having at least 5 wt % of carbon. The conductive material and the electrically insulating material may be respectively provided as separate targets. The conductive material is at least one metal selected from tantalum, niobium, titanium, tungsten, molybdenum, zirconium and chromium.

摘要翻译： 加热电阻器包括导电材料和由碳含量为基于混合物的3重量％以上的碳含量的碳化硅（SiC）和碳（C）的混合物制成的电绝缘材料。 电阻器通过溅射导电材料的靶和具有至少5重量％的碳的电绝缘材料形成。 导电材料和电绝缘材料可以分别设置为单独的靶。 导电材料是选自钽，铌，钛，钨，钼，锆和铬中的至少一种金属。