公开(公告)号：US10396204B2

公开(公告)日：2019-08-27

申请号：US15700193

申请日：2017-09-11

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Che-Wei Chang ,  Chun-Hsiung Wang ,  Chih-Wei Chen

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/66

Abstract: A semiconductor device includes: a gate structure extending along a first direction on a substrate, in which the gate structure includes a first edge and a second edge extending along the first direction; a first doped region adjacent to one side of the gate structure, in which the first doped region includes a third edge and a fourth edge extending along the first direction; a second doped region adjacent to another side of the gate structure, in which the second doped region comprises a fifth edge and a sixth edge extending along the first direction; a first fin-shaped structure extending from the second edge of the gate structure toward the third edge of the first doped region; and a second fin-shaped structure extending from the first edge of the gate structure toward the sixth edge of the second doped region.