公开(公告)号：US20160133635A1

公开(公告)日：2016-05-12

申请号：US14536693

申请日：2014-11-10

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chang-Po Hsiung

IPC: H01L27/115 ,  H01L45/00

CPC classification number: H01L27/11521 ,  H01L27/11526 ,  H01L45/00

Abstract: A flash cell includes a gate, a source/drain and a selector. The gate is disposed on a substrate, wherein the gate includes a control gate disposed on the substrate and a floating gate sandwiched by the control gate and the substrate. The source/drain is disposed in the substrate beside the gate. The selector electrically connects the source/drain, wherein the selector includes a bottom electrode, a resistance threshold switching material layer and a top electrode, and the resistance threshold switching material layer is sandwiched by the bottom electrode and the top electrode. A flash cell set includes a plurality of said flash cells. The flash cells electrically connect to each other by their selectors, and all of the selectors electrically connect to one same bit line.

Abstract translation: 闪存单元包括栅极，源极/漏极和选择器。 栅极设置在衬底上，其中栅极包括设置在衬底上的控制栅极和由控制栅极和衬底夹持的浮置栅极。 源极/漏极设置在栅极旁边的衬底中。 选择器电连接源极/漏极，其中选择器包括底部电极，电阻阈值开关材料层和顶部电极，并且电阻阈值开关材料层被底部电极和顶部电极夹在中间。 闪存单元组包括多个所述闪存单元。 闪存单元通过其选择器彼此电连接，并且所有选择器电连接到同一位线。