利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

218 条记录 (耗时 0.038 秒)

    Stram with self-reference read scheme
    31.
    发明授权
    Stram with self-reference read scheme 有权
    具有自参考读取方案

    公开(公告)号：US07876604B2

    公开(公告)日：2011-01-25

    申请号：US12390006

    申请日：2009-02-20

    申请人： Yuankai Zheng ,  Yiran Chen ,  Xiaobin Wang ,  Zheng Gao ,  Dimitar V. Dimitrov ,  Wenzhong Zhu ,  Yong Lu

    发明人： Yuankai Zheng ,  Yiran Chen ,  Xiaobin Wang ,  Zheng Gao ,  Dimitar V. Dimitrov ,  Wenzhong Zhu ,  Yong Lu

    IPC分类号： G11C11/00 ,  G11C7/00 ,  G11C7/02

    CPC分类号： G11C11/1673

    摘要： Self-reference reading a magnetic tunnel junction data cell methods are disclosed. An illustrative method includes applying a read voltage across a magnetic tunnel junction data cell and forming a read current. The magnetic tunnel junction data cell has a first resistance state. The read voltage is sufficient to switch the magnetic tunnel junction data cell resistance. The method includes detecting the read current and determining if the read current remains constant during the applying step. If the read current remains constant during the applying step, then the first resistance state of the magnetic tunnel junction data cell is the resistance state that the read voltage was sufficient to switch the magnetic tunnel junction data cell to.

    摘要翻译： 公开了自参考读取磁隧道结数据单元方法。 一种说明性方法包括在磁性隧道结数据单元上施加读取电压并形成读取电流。 磁性隧道结数据单元具有第一电阻状态。 读取电压足以切换磁性隧道结数据单元电阻。 该方法包括检测读取电流并确定在施加步骤期间读取电流是否保持恒定。 如果在施加步骤期间读取电流保持恒定，则磁性隧道结数据单元的第一电阻状态是读取电压足以将磁性隧道结数据单元切换到的电阻状态。

    Configurations and methods for manufacturing devices with trench-oxide-nano-tube super-junctions
    33.
    发明申请
    Configurations and methods for manufacturing devices with trench-oxide-nano-tube super-junctions 有权
    用于制造具有沟槽氧化物 - 纳米管超结的器件的配置和方法

    公开(公告)号：US20100314682A1

    公开(公告)日：2010-12-16

    申请号：US12661004

    申请日：2010-03-05

    申请人： Hamza Yilmaz ,  Madhur Bobde ,  Yeeheng Lee ,  Lingpeng Guan ,  Xiaobin Wang ,  John Chen ,  Anup Bhalla

    发明人： Hamza Yilmaz ,  Madhur Bobde ,  Yeeheng Lee ,  Lingpeng Guan ,  Xiaobin Wang ,  John Chen ,  Anup Bhalla

    IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L21/762

    CPC分类号： H01L29/7397 ,  H01L29/0661 ,  H01L29/66348

    摘要： This invention discloses semiconductor power device disposed on a semiconductor substrate of a first conductivity type. The semiconductor substrate supports an epitaxial layer of a second conductivity type thereon wherein the semiconductor power device is supported on a super-junction structure. The super-junction structure comprises a plurality of trenches opened from a top surface in the epitaxial layer; wherein each of the trenches having trench sidewalls covered with a first epitaxial layer of the first conductivity type to counter charge the epitaxial layer of the second conductivity type. A second epitaxial layer may be grown over the first epitaxial layer. Each of the trenches is filled with a non-doped dielectric material in a remaining trench gap space. Each of the trench sidewalls is opened with a tilted angle to form converging U-shaped trenches.

    摘要翻译： 本发明公开了一种设置在第一导电类型的半导体衬底上的半导体功率器件。 半导体衬底在其上支撑第二导电类型的外延层，其中半导体功率器件被支撑在超结结构上。 超结结构包括从外延层中的顶表面开放的多个沟槽; 其中每个沟槽具有覆盖有第一导电类型的第一外延层的沟槽侧壁，以对第二导电类型的外延层进行反电荷充电。 可以在第一外延层上生长第二外延层。 每个沟槽在剩余沟槽间隙空间中填充有非掺杂电介质材料。 每个沟槽侧壁以倾斜角打开以形成会聚的U形沟槽。

    Devices, systems, and methods for controlling a braking system
    34.
    发明授权
    Devices, systems, and methods for controlling a braking system 有权
    用于控制制动系统的装置，系统和方法

    公开(公告)号：US07853388B2

    公开(公告)日：2010-12-14

    申请号：US11710299

    申请日：2007-02-23

    申请人： Xiaobin Wang

    发明人： Xiaobin Wang

    IPC分类号： G06F7/00 ,  G06F17/00 ,  G05D1/00 ,  B60T7/12

    CPC分类号： B60T7/122

    摘要： Certain exemplary embodiments comprise a method, which can comprise automatically setting a service brake of a mining haulage vehicle. The service brake can be set responsive to a determination that a wheel comprising a wheel motor is rotating at a rotational speed that is above a predetermined rotational speed. In certain exemplary embodiments, the service brake can be automatically released.

    摘要翻译： 某些示例性实施例包括一种方法，其可以包括自动设置采矿运输车辆的行车制动。 可以响应于确定包括轮电机的车轮以高于预定转速的转速旋转的方式来设定行车制动器。 在某些示例性实施例中，可以自动释放行车制动器。

    Spin-transfer torque memory self-reference read and write assist methods
    35.
    发明授权
    Spin-transfer torque memory self-reference read and write assist methods 有权
    自转转矩存储器自参考读写辅助方法

    公开(公告)号：US07826260B2

    公开(公告)日：2010-11-02

    申请号：US12372180

    申请日：2009-02-17

    申请人： Wenzhong Zhu ,  Yiran Chen ,  Xiaobin Wang ,  Zheng Gao ,  Haiwen Xi ,  Dimitar V. Dimitrov

    发明人： Wenzhong Zhu ,  Yiran Chen ,  Xiaobin Wang ,  Zheng Gao ,  Haiwen Xi ,  Dimitar V. Dimitrov

    IPC分类号： G11C11/14

    CPC分类号： G11C11/1675 ,  G11C11/1659 ,  G11C11/1673

    摘要： A spin-transfer torque memory apparatus and self-reference read and write assist schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage and storing the first bit line read voltage. A magnetic field is applied through the free magnetic layer the forming a magnetic field modified magnetic tunnel junction data cell, the magnetic field rotates the magnetization orientation of the free magnetic layer without switching a resistance state of the magnetic tunnel junction data cell. Then a second read current is applied thorough the magnetic field modified magnetic tunnel junction data cell forming a second bit line read voltage and the bit line read voltage is stored and compared with the first bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state. Methods of applying a destabilizing magnetic field to the MTJ and then writing the desired resistance state are also disclosed.

    摘要翻译： 描述了自旋转移力矩存储装置和自参考读和写辅助方案。 读取自旋转移转矩存储单元的一种自参考方法包括：通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压并存储第一位线读取电压。 通过自由磁性层施加磁场，形成磁场修正的磁性隧道结数据单元，磁场使自由磁性层的磁化方向旋转而不转换磁性隧道结数据单元的电阻状态。 然后通过形成第二位线读取电压的磁场修改的磁性隧道结数据单元施加第二读取电流，并且存储位线读取电压并将其与第一位线读取电压进行比较，以确定第一电阻状态 磁隧道结数据单元是高电阻状态或低电阻状态。 还公开了将去稳定磁场施加到MTJ然后写入期望的电阻状态的方法。

    Spin-transfer torque memory self-reference read and write assist methods
    36.
    发明授权
    Spin-transfer torque memory self-reference read and write assist methods 有权
    自转转矩存储器自参考读写辅助方法

    公开(公告)号：US07813168B2

    公开(公告)日：2010-10-12

    申请号：US12372190

    申请日：2009-02-17

    申请人： Wenzhong Zhu ,  Yiran Chen ,  Dimitar V. Dimitrov ,  Xiaobin Wang

    发明人： Wenzhong Zhu ,  Yiran Chen ,  Dimitar V. Dimitrov ,  Xiaobin Wang

    IPC分类号： G11C11/14

    CPC分类号： G11C11/1675 ,  G11C11/1659 ,  G11C11/1673

    摘要： A spin-transfer torque memory apparatus and self-reference read and write assist schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage and storing the first bit line read voltage. A magnetic field is applied through the magnetic tunnel junction data cell forming a magnetic field modified magnetic tunnel junction data cell. Then a second read current is applied thorough the magnetic field modified magnetic tunnel junction data cell forming a second bit line read voltage and the bit line read voltage is stored and compared with the first bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state. Methods of applying a magnetic field to the MTJ and then writing the desired resistance state are also disclosed.

    摘要翻译： 描述了自旋转移力矩存储装置和自参考读和写辅助方案。 读取自旋转移转矩存储单元的一种自参考方法包括：通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压并存储第一位线读取电压。 通过形成磁场修正磁隧道结数据单元的磁隧道结数据单元施加磁场。 然后通过形成第二位线读取电压的磁场修改的磁性隧道结数据单元施加第二读取电流，并且存储位线读取电压并将其与第一位线读取电压进行比较，以确定第一电阻状态 磁隧道结数据单元是高电阻状态或低电阻状态。 还公开了将磁场施加到MTJ然后写入期望的电阻状态的方法。

    STRAM with Self-Reference Read Scheme
    38.
    发明申请
    STRAM with Self-Reference Read Scheme 有权
    STRAM与自参考读取方案

    公开(公告)号：US20100110784A1

    公开(公告)日：2010-05-06

    申请号：US12390006

    申请日：2009-02-20

    申请人： Yuankai Zheng ,  Yiran Chen ,  Xiaobin Wang ,  Zheng Gao ,  Dimitar V. Dimitrov ,  Wenzhong Zhu ,  Yong Lu

    发明人： Yuankai Zheng ,  Yiran Chen ,  Xiaobin Wang ,  Zheng Gao ,  Dimitar V. Dimitrov ,  Wenzhong Zhu ,  Yong Lu

    IPC分类号： G11C11/14 ,  G11C11/416

    CPC分类号： G11C11/1673

    摘要： Self-reference reading a magnetic tunnel junction data cell methods are disclosed. An illustrative method includes applying a read voltage across a magnetic tunnel junction data cell and forming a read current. The magnetic tunnel junction data cell has a first resistance state. The read voltage is sufficient to switch the magnetic tunnel junction data cell resistance. The method includes detecting the read current and determining if the read current remains constant during the applying step. If the read current remains constant during the applying step, then the first resistance state of the magnetic tunnel junction data cell is the resistance state that the read voltage was sufficient to switch the magnetic tunnel junction data cell to.

    摘要翻译： 公开了自参考读取磁隧道结数据单元方法。 一种说明性方法包括在磁性隧道结数据单元上施加读取电压并形成读取电流。 磁性隧道结数据单元具有第一电阻状态。 读取电压足以切换磁性隧道结数据单元电阻。 该方法包括检测读取电流并确定在施加步骤期间读取电流是否保持恒定。 如果在施加步骤期间读取电流保持恒定，则磁性隧道结数据单元的第一电阻状态是读取电压足以将磁性隧道结数据单元切换到的电阻状态。

    SPIN-TRANSFER TORQUE MEMORY SELF-REFERENCE READ AND WRITE ASSIST METHODS
    39.
    发明申请
    SPIN-TRANSFER TORQUE MEMORY SELF-REFERENCE READ AND WRITE ASSIST METHODS 有权
    转子转矩记忆自读参考读写方法

    公开(公告)号：US20100103728A1

    公开(公告)日：2010-04-29

    申请号：US12372180

    申请日：2009-02-17

    申请人： Wenzhong Zhu ,  Yiran Chen ,  Xiaobin Wang ,  Zheng Gao ,  Haiwen Xi ,  Dimitar V. Dimitrov

    发明人： Wenzhong Zhu ,  Yiran Chen ,  Xiaobin Wang ,  Zheng Gao ,  Haiwen Xi ,  Dimitar V. Dimitrov

    IPC分类号： G11C11/14 ,  G11C11/416 ,  G11C7/00

    CPC分类号： G11C11/1675 ,  G11C11/1659 ,  G11C11/1673

    摘要： A spin-transfer torque memory apparatus and self-reference read and write assist schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage and storing the first bit line read voltage. A magnetic field is applied through the free magnetic layer the forming a magnetic field modified magnetic tunnel junction data cell, the magnetic field rotates the magnetization orientation of the free magnetic layer without switching a resistance state of the magnetic tunnel junction data cell. Then a second read current is applied thorough the magnetic field modified magnetic tunnel junction data cell forming a second bit line read voltage and the bit line read voltage is stored and compared with the first bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state. Methods of applying a destabilizing magnetic field to the MTJ and then writing the desired resistance state are also disclosed.

    摘要翻译： 描述了自旋转移力矩存储装置和自参考读和写辅助方案。 读取自旋转移转矩存储单元的一种自参考方法包括：通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压并存储第一位线读取电压。 通过自由磁性层施加磁场，形成磁场修正的磁性隧道结数据单元，磁场使自由磁性层的磁化方向旋转而不转换磁性隧道结数据单元的电阻状态。 然后通过形成第二位线读取电压的磁场修改的磁性隧道结数据单元施加第二读取电流，并且存储位线读取电压并将其与第一位线读取电压进行比较，以确定第一电阻状态 磁隧道结数据单元是高电阻状态或低电阻状态。 还公开了将去稳定磁场施加到MTJ然后写入期望的电阻状态的方法。

    Voltage Reference Generation with Selectable Dummy Regions
    40.
    发明申请
    Voltage Reference Generation with Selectable Dummy Regions 失效
    具有可选择的虚拟区域的电压参考生成

    公开(公告)号：US20100091550A1

    公开(公告)日：2010-04-15

    申请号：US12502191

    申请日：2009-07-13

    申请人： Yiran Chen ,  Hai Li ,  Wenzhong Zhu ,  Xiaobin Wang ,  Yuan Yan ,  Harry Hongyue Liu

    发明人： Yiran Chen ,  Hai Li ,  Wenzhong Zhu ,  Xiaobin Wang ,  Yuan Yan ,  Harry Hongyue Liu

    IPC分类号： G11C11/00 ,  G11C5/14 ,  G11C11/14 ,  G11C7/02

    CPC分类号： G11C7/14 ,  G11C5/147 ,  G11C11/1673

    摘要： Various embodiments of the present invention are generally directed to an apparatus and associated method for generating a reference voltage with dummy resistive sense element regions. A first resistance distribution is obtained for a first dummy region of resistance sense elements and a second resistance distribution is obtained for a second dummy region of resistive sense elements. A user resistive sense element from a user region is assigned to a selected resistive sense element of one of the first or second dummy regions in relation to the first and second resistance distributions.

    摘要翻译： 本发明的各种实施例通常涉及用于产生具有虚拟电阻感测元件区域的参考电压的装置和相关联的方法。 对于电阻感测元件的第一虚拟区域获得第一电阻分布，并且获得电阻感测元件的第二虚拟区域的第二电阻分布。 来自用户区域的用户电阻感测元件相对于第一和第二电阻分布被分配给第一或第二虚拟区域中的一个的所选择的电阻感测元件。