公开(公告)号：US20100314682A1

公开(公告)日：2010-12-16

申请号：US12661004

申请日：2010-03-05

申请人： Hamza Yilmaz ,  Madhur Bobde ,  Yeeheng Lee ,  Lingpeng Guan ,  Xiaobin Wang ,  John Chen ,  Anup Bhalla

发明人： Hamza Yilmaz ,  Madhur Bobde ,  Yeeheng Lee ,  Lingpeng Guan ,  Xiaobin Wang ,  John Chen ,  Anup Bhalla

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L21/762

CPC分类号： H01L29/7397 ,  H01L29/0661 ,  H01L29/66348

摘要： This invention discloses semiconductor power device disposed on a semiconductor substrate of a first conductivity type. The semiconductor substrate supports an epitaxial layer of a second conductivity type thereon wherein the semiconductor power device is supported on a super-junction structure. The super-junction structure comprises a plurality of trenches opened from a top surface in the epitaxial layer; wherein each of the trenches having trench sidewalls covered with a first epitaxial layer of the first conductivity type to counter charge the epitaxial layer of the second conductivity type. A second epitaxial layer may be grown over the first epitaxial layer. Each of the trenches is filled with a non-doped dielectric material in a remaining trench gap space. Each of the trench sidewalls is opened with a tilted angle to form converging U-shaped trenches.

摘要翻译： 本发明公开了一种设置在第一导电类型的半导体衬底上的半导体功率器件。 半导体衬底在其上支撑第二导电类型的外延层，其中半导体功率器件被支撑在超结结构上。 超结结构包括从外延层中的顶表面开放的多个沟槽; 其中每个沟槽具有覆盖有第一导电类型的第一外延层的沟槽侧壁，以对第二导电类型的外延层进行反电荷充电。 可以在第一外延层上生长第二外延层。 每个沟槽在剩余沟槽间隙空间中填充有非掺杂电介质材料。 每个沟槽侧壁以倾斜角打开以形成会聚的U形沟槽。

公开(公告)号：US08390058B2

公开(公告)日：2013-03-05

申请号：US12661004

申请日：2010-03-05

申请人： Hamza Yilmaz ,  Madhur Bobde ,  Yeeheng Lee ,  Lingpeng Guan ,  Xiaobin Wang ,  John Chen ,  Anup Bhalla

发明人： Hamza Yilmaz ,  Madhur Bobde ,  Yeeheng Lee ,  Lingpeng Guan ,  Xiaobin Wang ,  John Chen ,  Anup Bhalla

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/7397 ,  H01L29/0661 ,  H01L29/66348

摘要： This invention discloses semiconductor power device disposed on a semiconductor substrate of a first conductivity type. The semiconductor substrate supports an epitaxial layer of a second conductivity type thereon wherein the semiconductor power device is supported on a super-junction structure. The super-junction structure comprises a plurality of trenches opened from a top surface in the epitaxial layer; wherein each of the trenches having trench sidewalls covered with a first epitaxial layer of the first conductivity type to counter charge the epitaxial layer of the second conductivity type. A second epitaxial layer may be grown over the first epitaxial layer. Each of the trenches is filled with a non-doped dielectric material in a remaining trench gap space. Each of the trench sidewalls is opened with a tilted angle to form converging U-shaped trenches.

摘要翻译： 本发明公开了一种设置在第一导电类型的半导体衬底上的半导体功率器件。 半导体衬底在其上支撑第二导电类型的外延层，其中半导体功率器件被支撑在超结结构上。 超结结构包括从外延层中的顶表面开放的多个沟槽; 其中每个沟槽具有覆盖有第一导电类型的第一外延层的沟槽侧壁，以对第二导电类型的外延层进行反电荷充电。 可以在第一外延层上生长第二外延层。 每个沟槽在剩余沟槽间隙空间中填充有非掺杂电介质材料。 每个沟槽侧壁以倾斜角打开以形成会聚的U形沟槽。

公开(公告)号：US20150115333A1

公开(公告)日：2015-04-30

申请号：US14062868

申请日：2013-10-24

申请人： Madhur Bobde ,  Anup Bhalla ,  Hamza Yilmaz ,  Wilson Ma ,  Lingpeng Guan ,  Yeeheng Lee ,  John Chen

发明人： Madhur Bobde ,  Anup Bhalla ,  Hamza Yilmaz ,  Wilson Ma ,  Lingpeng Guan ,  Yeeheng Lee ,  John Chen

IPC分类号： H01L29/10 ,  H01L29/808 ,  H01L27/06

CPC分类号： H01L29/1058 ,  H01L27/0727 ,  H01L29/0634 ,  H01L29/808 ,  H01L2224/0603 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

摘要： This invention discloses configurations and methods to manufacture lateral power device including a super-junction structure with an avalanche clamp diode formed between the drain and the gate. The lateral super-junction structure reduces on-resistance, while the structural enhancements, including an avalanche clamping diode and an N buffer region, increase the breakdown voltage between substrate and drain and improve unclamped inductive switching (UIS) performance.

摘要翻译： 本发明公开了制造横向功率器件的结构和方法，该器件包括在漏极和栅极之间形成的具有雪崩钳位二极管的超结结构。 横向超结结构降低了导通电阻，而结构增强（包括雪崩钳位二极管和N缓冲区）增加了衬底和漏极之间的击穿电压，并改善了非钳位感应开关（UIS）性能。

公开(公告)号：US08575695B2

公开(公告)日：2013-11-05

申请号：US12592619

申请日：2009-11-30

申请人： Madhur Bobde ,  Anup Bhalla ,  Hamza Yilmaz ,  Wilson Ma ,  Lingpeng Guan ,  Yeeheng Lee ,  John Chen

发明人： Madhur Bobde ,  Anup Bhalla ,  Hamza Yilmaz ,  Wilson Ma ,  Lingpeng Guan ,  Yeeheng Lee ,  John Chen

IPC分类号： H01L29/66 ,  H01L21/00

CPC分类号： H01L27/0705 ,  H01L29/0634 ,  H01L29/66901 ,  H01L29/808 ,  H01L2224/0603 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

摘要： This invention discloses configurations and methods to manufacture lateral power device including a super-junction structure with an avalanche clamp diode formed between the drain and the gate. The lateral super-junction structure reduces on-resistance, while the structural enhancements, including an avalanche clamping diode and an N buffer region, increase the breakdown voltage between substrate and drain and improve unclamped inductive switching (UIS) performance.

摘要翻译： 本发明公开了制造横向功率器件的结构和方法，该器件包括在漏极和栅极之间形成的具有雪崩钳位二极管的超结结构。 横向超结结构降低了导通电阻，而结构增强（包括雪崩钳位二极管和N缓冲区）增加了衬底和漏极之间的击穿电压，并改善了非钳位感应开关（UIS）性能。

公开(公告)号：US20110127606A1

公开(公告)日：2011-06-02

申请号：US12592619

申请日：2009-11-30

申请人： Madhur Bobde ,  Anup Bhalla ,  Hamza Yilmaz ,  Wilson Ma ,  Lingpeng Guan ,  Yeeheng Lee ,  John Chen

发明人： Madhur Bobde ,  Anup Bhalla ,  Hamza Yilmaz ,  Wilson Ma ,  Lingpeng Guan ,  Yeeheng Lee ,  John Chen

IPC分类号： H01L27/06 ,  H01L21/8234

CPC分类号： H01L27/0705 ,  H01L29/0634 ,  H01L29/66901 ,  H01L29/808 ,  H01L2224/0603 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

摘要： This invention discloses configurations and methods to manufacture lateral power device including a super junction structure with an avalanche clamp diode formed between the drain and the gate. The lateral super-junction structure reduces on-resistance, while the structural enhancements, including an avalanche clamping diode and an N buffer region, increase the breakdown voltage between substrate and drain and improve unclamped inductive switching (UIS) performance.

摘要翻译： 本发明公开了制造横向功率器件的结构和方法，该器件包括在漏极与栅极之间形成的具有雪崩钳位二极管的超结结构。 横向超结结构降低了导通电阻，而结构增强（包括雪崩钳位二极管和N缓冲区）增加了衬底和漏极之间的击穿电压，并改善了非钳位感应开关（UIS）性能。

公开(公告)号：US20170125514A9

公开(公告)日：2017-05-04

申请号：US14298922

申请日：2014-06-08

申请人： Lingpeng Guan ,  Madhur Bobde ,  Anup Bhalla ,  Yeeheng Lee ,  John Chen ,  Moses Ho

发明人： Lingpeng Guan ,  Madhur Bobde ,  Anup Bhalla ,  Yeeheng Lee ,  John Chen ,  Moses Ho

IPC分类号： H01L29/06 ,  H01L21/266 ,  H01L21/324 ,  H01L29/10

CPC分类号： H01L29/0634 ,  H01L21/2253 ,  H01L21/266 ,  H01L21/324 ,  H01L29/1095 ,  H01L29/66712 ,  H01L29/7802

摘要： This invention discloses a method for manufacturing a semiconductor power device on a semiconductor substrate supporting a . drift region composed of an epitaxial layer. The method includes a first step of growing a first epitaxial layer followed by forming a first hard mask layer on top of the epitaxial layer; a second step of applying a first implant mask to open a plurality of implant windows and applying a second implant mask for blocking some of the implant windows to implant a plurality of dopant regions of alternating conductivity types adjacent to each other in the first epitaxial layer; and a third step of repeating the first step and the second step by applying the same first and second implant masks to form a plurality of epitaxial layers, each of which is implanted with the dopant regions of the alternating conductivity types. Then the manufacturing processes proceed by carrying out a device manufacturing process on a top side of the epitaxial layer on top of the dopant regions of the alternating conductivity types with a diffusion process to merge the dopant regions of the alternating conductivity types as doped columns in the epitaxial layers.

公开(公告)号：US20150357406A1

公开(公告)日：2015-12-10

申请号：US14298922

申请日：2014-06-08

申请人： Lingpeng Guan ,  Madhur Bobde ,  Anup Bhalla ,  Yeeheng Lee ,  John Chen ,  Moses Ho

发明人： Lingpeng Guan ,  Madhur Bobde ,  Anup Bhalla ,  Yeeheng Lee ,  John Chen ,  Moses Ho

IPC分类号： H01L29/06 ,  H01L21/266 ,  H01L21/324 ,  H01L29/10

CPC分类号： H01L29/0634 ,  H01L21/2253 ,  H01L21/266 ,  H01L21/324 ,  H01L29/1095 ,  H01L29/66712 ,  H01L29/7802

摘要： This invention discloses a method for manufacturing a semiconductor power device on a semiconductor substrate supporting a . drift region composed of an epitaxial layer. The method includes a first step of growing a first epitaxial layer followed by forming a first hard mask layer on top of the epitaxial layer; a second step of applying a first implant mask to open a plurality of implant windows and applying a second implant mask for blocking some of the implant windows to implant a plurality of dopant regions of alternating conductivity types adjacent to each other in the first epitaxial layer; and a third step of repeating the first step and the second step by applying the same first and second implant masks to form a plurality of epitaxial layers, each of which is implanted with the dopant regions of the alternating conductivity types. Then the manufacturing processes proceed by carrying out a device manufacturing process on a top side of the epitaxial layer on top of the dopant regions of the alternating conductivity types with a diffusion process to merge the dopant regions of the alternating conductivity types as doped columns in the epitaxial layers.

摘要翻译： 本发明公开了一种在半导体基板上制造半导体功率器件的方法， 漂移区由外延层组成。 该方法包括：生长第一外延层，然后在外延层顶部形成第一硬掩模层的第一步骤; 第二步骤，施加第一注入掩模以打开多个植入窗口，并施加第二注入掩模以阻挡一些植入窗口，以在第一外延层中相互邻近地注入交替导电类型的多个掺杂区; 以及通过施加相同的第一和第二注入掩模来重复第一步骤和第二步骤以形成多个外延层的第三步骤，其中每个外延层被注入交替导电类型的掺杂区域。 然后通过在交变导电类型的掺杂剂区域的顶部上的外延层的顶侧上进行器件制造工艺来进行制造工艺，其具有扩散处理，以将交替导电类型的掺杂区域作为掺杂列合并在 外延层。

公开(公告)号：US08785306B2

公开(公告)日：2014-07-22

申请号：US13200683

申请日：2011-09-27

申请人： Lingpeng Guan ,  Madhur Bobde ,  Anup Bhalla ,  Yeeheng Lee ,  John Chen ,  Moses Ho

发明人： Lingpeng Guan ,  Madhur Bobde ,  Anup Bhalla ,  Yeeheng Lee ,  John Chen ,  Moses Ho

IPC分类号： H01L29/06

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/66712

摘要： A method for manufacturing a semiconductor power device on a semiconductor substrate supporting a drift region composed of an epitaxial layer by growing a first epitaxial layer followed by forming a first hard mask layer on top of the epitaxial layer; applying a first implant mask to open a plurality of implant windows and applying a second implant mask for blocking some of the implant windows to implant a plurality of dopant regions of alternating conductivity types adjacent to each other in the first epitaxial layer; repeating the first step and the second step by applying the same first and second implant masks to form a plurality of epitaxial layers then carrying out a device manufacturing process on a top side of the epitaxial layer with a diffusion process to merge the dopant regions of the alternating conductivity types as doped columns in the epitaxial layers.

摘要翻译： 一种在半导体基板上制造半导体功率器件的方法，该半导体衬底通过生长第一外延层，然后在外延层的顶部上形成第一硬掩模层，从而支撑由外延层组成的漂移区; 施加第一注入掩模以打开多个植入窗口并且施加第二注入掩模以阻挡所述植入物窗口中的一些以在所述第一外延层中相互邻近地注入交替导电类型的多个掺杂区域; 通过施加相同的第一和第二注入掩模来重复第一步骤和第二步骤，以形成多个外延层，然后利用扩散处理在外延层的顶侧上进行器件制造工艺，以将掺杂区域 交替导电类型作为外延层中的掺杂列。

公开(公告)号：US20110147830A1

公开(公告)日：2011-06-23

申请号：US12643837

申请日：2009-12-21

申请人： John Chen ,  Yeeheng Lee ,  Lingpeng Guan ,  Moses Ho ,  Wilson Ma ,  Anup Bhalla ,  Hamza Yilmaz

发明人： John Chen ,  Yeeheng Lee ,  Lingpeng Guan ,  Moses Ho ,  Wilson Ma ,  Anup Bhalla ,  Hamza Yilmaz

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/66636 ,  H01L21/26586 ,  H01L29/0615 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/165 ,  H01L29/456 ,  H01L29/66719 ,  H01L29/78 ,  H01L29/7811

摘要： Self-aligned charge balanced semiconductor devices and methods for forming such devices are disclosed. One or more planar gates are formed over a semiconductor substrate of a first conductivity type. One or more deep trenches are etched in the semiconductor self-aligned to the planar gates. The trenches are filled with a semiconductor material of a second conductivity type such that the deep trenches are charge balanced with the adjacent regions of the semiconductor substrate This process can form self-aligned charge balanced devices with a cell pitch less than 12 microns.

摘要翻译： 公开了自对准电荷平衡半导体器件及其形成方法。 在第一导电类型的半导体衬底上形成一个或多个平面栅极。 在与平面栅极自对准的半导体中蚀刻一个或多个深沟槽。 沟槽填充有第二导电类型的半导体材料，使得深沟槽与半导体衬底的相邻区域电荷平衡。该工艺可以形成具有小于12微米的电池间距的自对准电荷平衡装置。

公开(公告)号：US20130075855A1

公开(公告)日：2013-03-28

申请号：US13200683

申请日：2011-09-27

申请人： Lingpeng Guan ,  Madhur Bobde ,  Anup Bhalla ,  Yeeheng Lee ,  John Chen ,  Moses Ho

发明人： Lingpeng Guan ,  Madhur Bobde ,  Anup Bhalla ,  Yeeheng Lee ,  John Chen ,  Moses Ho

IPC分类号： H01L29/06 ,  H01L21/22

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/66712

摘要： A method for manufacturing a semiconductor power device on a semiconductor substrate supporting a drift region composed of an epitaxial layer by growing a first epitaxial layer followed by forming a first hard mask layer on top of the epitaxial layer; applying a first implant mask to open a plurality of implant windows and applying a second implant mask for blocking some of the implant windows to implant a plurality of dopant regions of alternating conductivity types adjacent to each other in the first epitaxial layer; repeating the first step and the second step by applying the same first and second implant masks to form a plurality of epitaxial layers then carrying out a device manufacturing process on a top side of the epitaxial layer with a diffusion process to merge the dopant regions of the alternating conductivity types as doped columns in the epitaxial layers.

摘要翻译： 一种在半导体基板上制造半导体功率器件的方法，该半导体衬底通过生长第一外延层，然后在外延层的顶部上形成第一硬掩模层，从而支撑由外延层组成的漂移区; 施加第一注入掩模以打开多个植入窗口并且施加第二注入掩模以阻挡所述植入物窗口中的一些以在所述第一外延层中相互邻近地注入交替导电类型的多个掺杂区域; 通过施加相同的第一和第二注入掩模来重复第一步骤和第二步骤，以形成多个外延层，然后利用扩散处理在外延层的顶侧上进行器件制造工艺，以将掺杂区域 交替导电类型作为外延层中的掺杂列。