公开(公告)号：US20100033884A1

公开(公告)日：2010-02-11

申请号：US12186400

申请日：2008-08-05

申请人： Tso-Hung Fan ,  Kuo-Ji Chen

发明人： Tso-Hung Fan ,  Kuo-Ji Chen

IPC分类号： H02H9/04

CPC分类号： H02H9/046

摘要： This invention discloses a trigger circuit for an electrostatic discharge (ESD) protection device, the ESD protection device being turned on during an ESD event and being turned off during a normal operation, the trigger circuit comprises a voltage sensing circuit coupled to a bonding pad, the voltage sensing circuit being configured to produce a first predetermined voltage during a ESD event, and to produce a second predetermined voltage complimentary to the first predetermined voltage during a normal operation, and a voltage converting circuit having a positive feedback circuit and coupled between the voltage sensing circuit and the ESD protection device for converting the first predetermined voltage to a third predetermined voltage for turning on the ESD protection device, and for converting the second predetermined voltage to a fourth predetermined voltage for turning off the ESD protection device.

摘要翻译： 本发明公开了一种用于静电放电（ESD）保护装置的触发电路，ESD保护装置在ESD事件期间被接通并且在正常操作期间被断开，触发电路包括耦合到接合焊盘的电压感测电路， 电压感测电路被配置为在ESD事件期间产生第一预定电压，并且在正常操作期间产生与第一预定电压互补的第二预定电压，以及电压转换电路，具有正反馈电路并耦合在电压 感测电路和用于将第一预定电压转换为用于接通ESD保护装置的第三预定电压的ESD保护装置，以及用于将第二预定电压转换为用于关闭ESD保护装置的第四预定电压。

公开(公告)号：US07969699B2

公开(公告)日：2011-06-28

申请号：US12186400

申请日：2008-08-05

申请人： Tso-Hung Fan ,  Kuo-Ji Chen

发明人： Tso-Hung Fan ,  Kuo-Ji Chen

IPC分类号： H02H9/00

CPC分类号： H02H9/046

摘要： This invention discloses a trigger circuit for an electrostatic discharge (ESD) protection device, the ESD protection device being turned on during an ESD event and being turned off during a normal operation, the trigger circuit comprises a voltage sensing circuit coupled to a bonding pad, the voltage sensing circuit being configured to produce a first predetermined voltage during a ESD event, and to produce a second predetermined voltage complimentary to the first predetermined voltage during a normal operation, and a voltage converting circuit having a positive feedback circuit and coupled between the voltage sensing circuit and the ESD protection device for converting the first predetermined voltage to a third predetermined voltage for turning on the ESD protection device, and for converting the second predetermined voltage to a fourth predetermined voltage for turning off the ESD protection device.

摘要翻译： 本发明公开了一种用于静电放电（ESD）保护装置的触发电路，ESD保护装置在ESD事件期间被接通并且在正常操作期间被断开，触发电路包括耦合到接合焊盘的电压感测电路， 电压感测电路被配置为在ESD事件期间产生第一预定电压，并且在正常操作期间产生与第一预定电压互补的第二预定电压，以及电压转换电路，具有正反馈电路并耦合在电压 感测电路和用于将第一预定电压转换为用于接通ESD保护装置的第三预定电压的ESD保护装置，以及用于将第二预定电压转换为用于关闭ESD保护装置的第四预定电压。

公开(公告)号：US5648128A

公开(公告)日：1997-07-15

申请号：US659341

申请日：1996-06-06

申请人： Ching-Fa Yeh ,  Tso-Hung Fan

发明人： Ching-Fa Yeh ,  Tso-Hung Fan

IPC分类号： H01L21/316 ,  B06B1/20

CPC分类号： H01L21/316

摘要： A liquid phase deposition method involves a reaction mixture composed of a hydrosilicofluoric acid aqueous solution supersaturated with silicon dioxide, and a semiconductor substrate disposed therein. The reaction mixture is treated with an ultrasonic oscillation at a frequency ranging between 20 and 100 KHz and at a temperature ranging between 10.degree. and 50.degree. C. for accelerating the growth rate of a silicon dioxide layer formed on the semiconductor substrate.

摘要翻译： 液相沉积方法包括由二氧化硅过饱和的氢硅氟酸水溶液和设置在其中的半导体衬底组成的反应混合物。 将反应混合物用频率范围在20和100KHz之间的超声波振荡处理，并且在10℃和50℃之间的温度下进行处理，以加速在半导体衬底上形成的二氧化硅层的生长速率。