公开(公告)号：US06538288B2

公开(公告)日：2003-03-25

申请号：US09725220

申请日：2000-11-29

Applicant: Shu-Chuan Lee ,  Yu-Chen Lin

Inventor： Shu-Chuan Lee ,  Yu-Chen Lin

IPC: H01L2362

CPC classification number: H01L27/0262 ,  H01L27/0266 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An electrostatic discharge (ESD) protection structure for an integrated circuit constructed on a substrate of a first type is provided to includes a plurality of island-like distributed diffusion regions. The protection structure includes a semiconductor controlled rectifier (SCR), an MOS transistor and a plurality of island-like distributed diffusion regions of the first type. The semiconductor controlled rectifier is constructed on the base region and coupled to the integrated circuit. The SCR includes a first region of a second type formed next to the base region, a second region of the first type formed in the first region, and a third region of the second type formed in the base region. The MOS transistor has a drain coupled to the bonding pad or a VDD bus, and a gate and a source both coupled to a reference ground. The plurality of island-like distributed diffusion regions of the first type are formed in the base region and each is coupled to the reference ground.