公开(公告)号：US20110039390A1

公开(公告)日：2011-02-17

申请号：US12784348

申请日：2010-05-20

申请人： Chun-Feng Nieh ,  Chun Hsiung Tsai ,  Yuan-Hung Chiu ,  Hun-Jan Tao

发明人： Chun-Feng Nieh ,  Chun Hsiung Tsai ,  Yuan-Hung Chiu ,  Hun-Jan Tao

IPC分类号： H01L21/336

CPC分类号： H01L21/26506 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/26593 ,  H01L29/6659 ,  H01L29/7833

摘要： A method of forming an integrated circuit includes providing a semiconductor wafer, and forming a metal-oxide-semiconductor (MOS) device. The step of forming the MOS device includes forming a gate stack on the semiconductor wafer, and performing a cryo-implantation to form an implantation region adjacent the gate stack at a wafer temperature lower than 0° C. The step of performing the cryo-implantation is selected from the group consisting essentially of implanting the semiconductor wafer to form a pre-amorphized implantation (PAI) region; implanting the semiconductor wafer to form a lightly-doped source/drain region; implanting the semiconductor wafer to form a pocket/halo region; implanting the semiconductor wafer to form a deep source/drain region, and combinations thereof

摘要翻译： 形成集成电路的方法包括提供半导体晶片和形成金属氧化物半导体（MOS）器件。 形成MOS器件的步骤包括在半导体晶片上形成栅极堆叠，并且在低于0℃的晶片温度下进行低温注入以形成与栅叠层相邻的注入区。进行低温注入 选自基本上由植入半导体晶片以形成预非晶化植入（PAI）区域的组; 注入半导体晶片以形成轻掺杂的源/漏区; 注入半导体晶片以形成口/晕区域; 注入半导体晶片以形成深源极/漏极区及其组合