摘要:
This invention relates to a method for preparing tetrahydrothiophen, consisting in that tetrahydrofuran is reacted with a sulphidation agent, elementary sulphur or phosphorus sulphides, with the stoichiometric ratio of the above-named substances, and at a temperature of 175.degree.-215.degree.C, with subsequent isolation of the end product. The interaction between tetrahydrofuran and elementary sulphur can be realized in the presence of a red phosphorus additive which increases the yield of the end product. In the described method a non-toxic and safe (with respect to explosion) sulphidation reagents is used which markedly improves the labour conditions. The method is simple, requires no complicated process equipment, and can be effected under milder conditions as compared with the known methods.
摘要:
Disclosed are a method for producing a highly reactive intermediate, which comprises: preparing an electron-accepting active compound (1), preparing a piezoelectric material (3), and applying mechanical strain to the piezoelectric material (3) in the presence of the electron-accepting active compound (1) and the piezoelectric material (3), and subjecting the compound (1) to one-electron reduction to generate a corresponding highly reactive intermediate; a redox reaction method using the method for producing the same; and a method for producing a redox reaction product.
摘要:
A phase difference plate includes a phase difference plate P1 and a phase difference plate P2. An in-plane slow axis of the phase difference plate P1 is orthogonal to an in-plane slow axis of the phase difference plate P2. The phase difference plate P2 includes a layer of a liquid crystal material oriented in an in-plane direction. An in-plane retardation ReP2(λ) at a wavelength λ nm of the phase difference plate P2 satisfies the following formulae (e1) and (e2): {Re2(400)−Re2(550)}/{Re2(550)−Re2(700)} 1.13 (e2). An in-plane retardation ReP1(λ) of the phase difference plate P1 at a wavelength λ nm and the in-plane retardation ReP2(λ) of the phase difference plate P2 at the wavelength λ nm satisfy the following formulae (e4) and (e5): ReP1(550)>ReP2(550) (e4), and ReP1(400)/ReP1(700)