公开(公告)号：US20070090457A1

公开(公告)日：2007-04-26

申请号：US11489144

申请日：2006-07-18

Applicant: Woo-jae Lee ,  Mun-pyo Hong ,  Byoung-june Kim ,  Sung-hoon Yang

Inventor： Woo-jae Lee ,  Mun-pyo Hong ,  Byoung-june Kim ,  Sung-hoon Yang

IPC: H01L29/04 ,  H01L21/84

CPC classification number: H01L27/12 ,  G02F1/133305 ,  H01L27/1248 ,  H01L29/7842 ,  H01L29/78603

Abstract: A thin film transistor (TFT) substrate comprises: a plastic insulation substrate; a first silicon nitride layer with a first refractive index, formed one surface of the plastic insulation substrate; and a TFT comprising a second silicon nitride layer formed with a second refractive index smaller than the first refractive index on the first silicon nitride layer. Thus, the present invention provides a TFT substrate wherein there is reduced a problem in that thin films are lifted from a plastic insulation substrate.

Abstract translation: 薄膜晶体管（TFT）基板包括：塑料绝缘基板; 具有第一折射率的第一氮化硅层，形成塑料绝缘基板的一个表面; 以及TFT，其包括在第一氮化硅层上形成的第二折射率小于第一折射率的第二氮化硅层。 因此，本发明提供一种TFT基板，其中减少了由塑料绝缘基板提起薄膜的问题。