公开(公告)号：US08994025B2

公开(公告)日：2015-03-31

申请号：US12929064

申请日：2010-12-28

Applicant: Sang-Youn Han ,  Jun-Ho Song ,  Kyung-Sook Jeon ,  Mi-Seon Seo ,  Sung-Hoon Yang ,  Suk-Won Jung ,  Seung Mi Seo

Inventor： Sang-Youn Han ,  Jun-Ho Song ,  Kyung-Sook Jeon ,  Mi-Seon Seo ,  Sung-Hoon Yang ,  Suk-Won Jung ,  Seung Mi Seo

IPC: H01L29/10 ,  H01L31/112 ,  G02F1/133 ,  H01L31/0376

CPC classification number: H01L31/1129 ,  G02F1/13318 ,  H01L31/03762 ,  Y02E10/548

Abstract: The present invention relates to a visible ray sensor and a light sensor capable of improving photosensitivity by preventing photodegradation. The visible ray sensor may include: a substrate, a light blocking member formed on the substrate, and a visible ray sensing thin film transistor formed on the light blocking member. The light blocking member may be made of a transparent electrode, a band pass filter, or an opaque metal.

Abstract translation: 本发明涉及能够通过防止光降解而提高光敏度的可见光线传感器和光传感器。 可见光线传感器可以包括：衬底，形成在衬底上的遮光构件，以及形成在遮光构件上的可见光线感测薄膜晶体管。 遮光构件可以由透明电极，带通滤光器或不透明金属制成。

公开(公告)号：US08822995B2

公开(公告)日：2014-09-02

申请号：US12486542

申请日：2009-06-17

Applicant: Chun-Gi You ,  Kap-Soo Yoon ,  Gug-Rae Jo ,  Sung-Hoon Yang ,  Ki-Hun Jeong ,  Seung-Hwan Shim ,  Jae-Ho Choi

Inventor： Chun-Gi You ,  Kap-Soo Yoon ,  Gug-Rae Jo ,  Sung-Hoon Yang ,  Ki-Hun Jeong ,  Seung-Hwan Shim ,  Jae-Ho Choi

IPC: H01L29/04 ,  H01L27/12 ,  H01L27/32 ,  H01L29/786

CPC classification number: H01L27/1251 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1288 ,  H01L27/3262 ,  H01L29/7869

Abstract: A display substrate includes a switching transistor electrically connected to a gate line and a data line, the data line extending in a first direction substantially perpendicular to the gate line extending in a second direction, the switching transistor including a switching active pattern comprising amorphous silicon, a driving transistor electrically connected to a driving voltage line and the switching transistor, the driving voltage line extended in the first direction, the driving transistor including a driving active pattern comprising a metal oxide; and a light-emitting element electrically connected to the driving transistor.

Abstract translation: 显示基板包括电连接到栅极线和数据线的开关晶体管，所述数据线在基本上垂直于在第二方向延伸的栅极线的第一方向上延伸，所述开关晶体管包括包含非晶硅的开关有源图案， 电连接到驱动电压线的驱动晶体管和所述开关晶体管，所述驱动电压线在所述第一方向上延伸，所述驱动晶体管包括包含金属氧化物的驱动有源图案; 以及电连接到驱动晶体管的发光元件。

公开(公告)号：US08785932B2

公开(公告)日：2014-07-22

申请号：US13182235

申请日：2011-07-13

Applicant: Suk Won Jung ,  Byeong Hoon Cho ,  Sung Hoon Yang ,  Woong Kwon Kim ,  Sang Youn Han ,  Dae Cheol Kim ,  Ki-Hun Jeong ,  Kyung-Sook Jeon ,  Seung Mi Seo ,  Jung-Suk Bang ,  Kun-Wook Han

Inventor： Suk Won Jung ,  Byeong Hoon Cho ,  Sung Hoon Yang ,  Woong Kwon Kim ,  Sang Youn Han ,  Dae Cheol Kim ,  Ki-Hun Jeong ,  Kyung-Sook Jeon ,  Seung Mi Seo ,  Jung-Suk Bang ,  Kun-Wook Han

IPC: H01L33/50

CPC classification number: H01L31/18 ,  G02F1/13338 ,  G02F2001/13312 ,  G06F3/042 ,  H01L29/42384 ,  H01L29/78633

Abstract: An IR sensing transistor according to an exemplary embodiment of the present invention includes: a light blocking layer formed on a substrate; a gate insulating layer formed on the light blocking layer; a semiconductor formed on the gate insulating layer; a pair of ohmic contact members formed on the semiconductor; a source electrode and a drain electrode formed on respective ones of the ohmic contact members; a passivation layer formed on the source electrode and the drain electrode; and a gate electrode formed on the passivation layer, wherein substantially all of the gate insulating layer lies on the light blocking layer.

Abstract translation: 根据本发明的示例性实施例的IR感测晶体管包括：形成在基板上的遮光层; 形成在所述遮光层上的栅极绝缘层; 形成在栅极绝缘层上的半导体; 形成在所述半导体上的一对欧姆接触构件; 源电极和漏电极，形成在各个欧姆接触元件上; 形成在源电极和漏电极上的钝化层; 以及形成在所述钝化层上的栅电极，其中所述栅极绝缘层基本上全部位于所述遮光层上。

公开(公告)号：US08698144B2

公开(公告)日：2014-04-15

申请号：US12731380

申请日：2010-03-25

Applicant: Kyung-Sook Jeon ,  Kap-Soo Yoon ,  Woong-Kwon Kim ,  Sang-Youn Han ,  Jun-Ho Song ,  Sung-Hoon Yang ,  Byeong-Hoon Cho ,  Dae-Cheol Kim ,  Ki-Hun Jeong ,  Jung-Suk Bang

Inventor： Kyung-Sook Jeon ,  Kap-Soo Yoon ,  Woong-Kwon Kim ,  Sang-Youn Han ,  Jun-Ho Song ,  Sung-Hoon Yang ,  Byeong-Hoon Cho ,  Dae-Cheol Kim ,  Ki-Hun Jeong ,  Jung-Suk Bang

IPC: H01L33/00

CPC classification number: G02F1/13338 ,  G02F2001/13312 ,  G02F2203/11 ,  G06F3/0412 ,  G06F3/042

Abstract: A display panel that includes: a substrate, a sensing transistor disposed on the substrate, and a readout transistor connected to the sensing transistor and transmitting a detecting signal is presented. The sensing transistor includes a semiconductor layer disposed on the upper substrate, a source electrode and a drain electrode disposed on the semiconductor layer, and a gate electrode overlapping the semiconductor layer on the source electrode and the drain electrode. Accordingly, in a display device and a manufacturing method thereof, an infrared sensing transistor, a visible light sensing transistor, and a readout transistor are simultaneously formed with a top gate structure such that the number of manufacturing processes and the manufacturing cost may be reduced.

Abstract translation: 一种显示面板，包括：衬底，设置在衬底上的感测晶体管，以及连接到感测晶体管并传输检测信号的读出晶体管。 感测晶体管包括设置在上基板上的半导体层，设置在半导体层上的源电极和漏电极以及与源电极和漏电极上的半导体层重叠的栅电极。 因此，在显示装置及其制造方法中，同时形成具有顶栅结构的红外感测晶体管，可见光感测晶体管和读出晶体管，从而可以减少制造工艺的数量和制造成本。

公开(公告)号：US20130249817A1

公开(公告)日：2013-09-26

申请号：US13540677

申请日：2012-07-03

Applicant: Suk Won JUNG ,  Seung Mi SEO ,  Sung Hoon YANG

Inventor： Suk Won JUNG ,  Seung Mi SEO ,  Sung Hoon YANG

IPC: H01L31/101 ,  G06F3/041 ,  G06F3/038

CPC classification number: H01L31/167 ,  G02F1/13338 ,  G02F2001/13312 ,  G06F3/0412 ,  G06F3/0416 ,  G06F3/0421

Abstract: A photosensor includes a sensing switching element, a sensing element, and a reset switching element. The sensing switching element includes an output terminal connected to a sensing signal line, a control terminal connected to a first gate line, and an input terminal connected to the first node. The sensing element includes an output terminal connected to a first node, a control terminal connected a second gate line disposed next to the first gate line, and an input terminal connected to a source voltage line transmitting a source voltage. The sensing element senses light. The reset switching element includes an output terminal connected to the first node, a control terminal connected to the second gate line, and an input terminal connected to a driving voltage line transmitting a driving voltage.

Abstract translation: 光传感器包括感测开关元件，感测元件和复位开关元件。 感测开关元件包括连接到感测信号线的输出端子，连接到第一栅极线的控制端子和连接到第一节点的输入端子。 感测元件包括连接到第一节点的输出端子，连接在第一栅极线旁边的第二栅极线的控制端子以及连接到发送源极电压的源极电压线的输入端子。 传感元件感光。 复位开关元件包括连接到第一节点的输出端子，连接到第二栅极线的控制端子和连接到传输驱动电压的驱动电压线的输入端子。

公开(公告)号：US08409916B2

公开(公告)日：2013-04-02

申请号：US13233399

申请日：2011-09-15

Applicant: Kap-Soo Yoon ,  Sung-Hoon Yang ,  Byoung-June Kim ,  Czang-Ho Lee ,  Sung-Ryul Kim ,  Hwa-Yeul Oh ,  Jae-Ho Choi ,  Yong-Mo Choi

Inventor： Kap-Soo Yoon ,  Sung-Hoon Yang ,  Byoung-June Kim ,  Czang-Ho Lee ,  Sung-Ryul Kim ,  Hwa-Yeul Oh ,  Jae-Ho Choi ,  Yong-Mo Choi

IPC: H01L21/00 ,  H01L21/16

CPC classification number: H01L29/7869 ,  H01L27/1225

Abstract: A thin film transistor substrate includes an insulating plate; a gate electrode disposed on the insulating plate; a semiconductor layer comprising a metal oxide, wherein the metal oxide has oxygen defects of less than or equal to 3%, and wherein the metal oxide comprises about 0.01 mole/cm3 to about 0.3 mole/cm3 of a 3d transition metal; a gate insulating layer disposed between the gate electrode and the semiconductor layer; and a source electrode and a drain electrode disposed on the semiconductor layer. Also described is a display substrate. The metal oxide has oxygen defects of less than or equal to 3%, and is doped with about 0.01 mole/cm3 to about 0.3 mole/cm3 of 3d transition metal. The metal oxide comprises indium oxide or titanium oxide. The 3d transition metal includes at least one 3d transition metal selected from the group consisting of chromium, cobalt, nickel, iron, manganese, and mixtures thereof.

Abstract translation: 薄膜晶体管基板包括绝缘板; 设置在绝缘板上的栅电极; 包含金属氧化物的半导体层，其中所述金属氧化物具有小于或等于3％的氧缺陷，并且其中所述金属氧化物包含约0.01mol / cm 3至约0.3mol / cm 3的3d过渡金属; 设置在所述栅极电极和所述半导体层之间的栅极绝缘层; 以及设置在半导体层上的源电极和漏电极。 还描述了显示基板。 金属氧化物具有小于或等于3％的氧缺陷，并且掺杂有约0.01摩尔/ cm3至约0.3摩尔/ cm3的3d过渡金属。 金属氧化物包括氧化铟或二氧化钛。 3d过渡金属包括选自铬，钴，镍，铁，锰及其混合物中的至少一种3d过渡金属。

公开(公告)号：US20130056732A1

公开(公告)日：2013-03-07

申请号：US13366683

申请日：2012-02-06

Applicant: Suk Won JUNG ,  Sung Hoon YANG ,  Sang-Youn HAN ,  Seung Mi SEO ,  Mi-Seon SEO

Inventor： Suk Won JUNG ,  Sung Hoon YANG ,  Sang-Youn HAN ,  Seung Mi SEO ,  Mi-Seon SEO

IPC: H01L31/0376

CPC classification number: G06F3/042 ,  G02F1/13338 ,  G06F3/0412

Abstract: A display device includes: a substrate; an infrared sensing transistor on the substrate; a readout transistor connected to the infrared sensing transistor; a power source line; and a light blocking member on the infrared sensing transistor, where the infrared sensing transistor includes a light blocking film on the substrate, a first gate electrode contacting and overlapping the light blocking film and connected to a power source line, a first semiconductor layer on the first gate electrode overlapping the light blocking film, and first source and drain electrodes on the first semiconductor layer, where the readout transistor includes a second gate electrode on the substrate, a second semiconductor layer on the second gate electrode and overlapping the second gate electrode, and second source and drain electrodes the second semiconductor layer, and where the power source line and the first gate electrode are at a same layer.

Abstract translation: 显示装置包括：基板; 基板上的红外感测晶体管; 连接到红外感测晶体管的读出晶体管; 电源线; 以及所述红外感测晶体管上的遮光构件，其中所述红外感测晶体管在所述基板上包括遮光膜，与所述遮光膜接触并重叠并连接到电源线的第一栅电极， 与遮光膜重叠的第一栅电极以及第一半导体层上的第一源电极和漏电极，其中所述读出晶体管在所述衬底上包括第二栅电极，所述第二栅电极上的第二半导体层与所述第二栅电极重叠， 以及第二源极和漏极，第二半导体层，以及其中电源线和第一栅电极处于同一层。

公开(公告)号：US20130021298A1

公开(公告)日：2013-01-24

申请号：US13362345

申请日：2012-01-31

Applicant: Seung Mi SEO ,  Suk Won JUNG ,  Sung Hoon YANG

Inventor： Seung Mi SEO ,  Suk Won JUNG ,  Sung Hoon YANG

IPC: G06F3/042

CPC classification number: G06F3/042 ,  G06F3/0412

Abstract: A display device includes: a display panel; and a sensing signal processor connected to the display panel, in which the display panel includes: a gate line which transmits a gate signal; a sensing signal line crossing the gate line; a reference sensing signal line crossing the gate line; a sensing unit connected to the gate line and the sensing signal line, where the sensing unit senses light by a touch on the display panel; and a reference sensing unit connected to the gate line and the reference sensing signal line and blocked from the light by the touch, and where the sensing signal processor is connected to the sensing unit and the reference sensing unit and includes a comparator.

Abstract translation: 显示装置包括：显示面板; 以及连接到所述显示面板的感测信号处理器，其中所述显示面板包括：栅极线，其传输栅极信号; 穿过栅极线的感测信号线; 穿过栅极线的参考感测信号线; 连接到栅极线和感测信号线的感测单元，其中感测单元通过触摸在显示面板上感测光; 以及参考感测单元，其连接到栅极线和参考感测信号线，并且通过触摸阻挡光，并且其中感测信号处理器连接到感测单元和参考感测单元并且包括比较器。

公开(公告)号：US08313988B2

公开(公告)日：2012-11-20

申请号：US11646126

申请日：2006-12-27

Applicant: Sang-Woo Whangbo ,  Shi-Yul Kim ,  Sung-Hoon Yang ,  Woo-Geun Lee

Inventor： Sang-Woo Whangbo ,  Shi-Yul Kim ,  Sung-Hoon Yang ,  Woo-Geun Lee

IPC: H01L21/00 ,  H01L21/84

Abstract: A thin film transistor substrate includes a base substrate, a gate electrode, a gate insulating layer, a surface treating layer, an active layer, a source electrode and a drain electrode. The gate electrode is formed on the base substrate. The gate insulating layer is formed on the base substrate to cover the gate electrode. The surface treating layer is formed on the gate insulating layer by treating the gate insulating layer with a nitrogen-containing gas to prevent leakage current. The active layer is formed on the surface treating layer to cover the gate electrode. The source electrode and the gate electrode that are spaced apart from each other by a predetermined distance are formed on the active layer.

公开(公告)号：US08253896B2

公开(公告)日：2012-08-28

申请号：US12898250

申请日：2010-10-05

Applicant: Kap-Soo Yoon ,  Sung-Hoon Yang ,  Ki-Hun Jeong ,  Kyung-Sook Jeon ,  Seung-Mi Seo

Inventor： Kap-Soo Yoon ,  Sung-Hoon Yang ,  Ki-Hun Jeong ,  Kyung-Sook Jeon ,  Seung-Mi Seo

IPC: G02F1/1335

CPC classification number: H01L27/1446 ,  B82Y15/00 ,  B82Y20/00 ,  G02B5/201 ,  H01L31/09 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A photonic sensor includes a first electrode layer, a second electrode layer, a third electrode layer, a first photon absorption layer, a second photon absorption layer, a third photon absorption layer and a charge blocking layer. The first photon absorption layer includes a dispersion of first nanoparticles, and is configured to transduce a first colored light into corresponding electric charge. The second photon absorption layer includes a dispersion of second nanoparticles, and is configured to transduce a second colored light into corresponding electric charge according to light intensity. The third photon absorption layer includes a dispersion of third nanoparticles, and is configured to transduce a third colored light into corresponding electric charge according to light intensity. The charge blocking layer is formed between the first and second photon absorption layers to block flow of electric charge between the first and second photon absorption layers.

Abstract translation: 光子传感器包括第一电极层，第二电极层，第三电极层，第一光子吸收层，第二光子吸收层，第三光子吸收层和电荷阻挡层。 第一光子吸收层包括第一纳米颗粒的分散体，并且被配置为将第一有色光转换成相应的电荷。 第二光子吸收层包括第二纳米颗粒的分散体，并且被配置为根据光强度将第二有色光转换成相应的电荷。 第三光子吸收层包括第三纳米颗粒的分散体，并且被配置为根据光强度将第三有色光转换成相应的电荷。 电荷阻挡层形成在第一和第二光子吸收层之间以阻止第一和第二光子吸收层之间的电荷流动。