公开(公告)号：US06444541B1

公开(公告)日：2002-09-03

申请号：US09638646

申请日：2000-08-14

Applicant: Jun-Yang Lai ,  Jih-Hwa Wang ,  Chou-Jie Tsai ,  Chin-Te Huang ,  Su-Yu Yeh ,  Meng-Shiun Shieh ,  Jang-Cheng Hsieh ,  Chung-Te Lin

Inventor： Jun-Yang Lai ,  Jih-Hwa Wang ,  Chou-Jie Tsai ,  Chin-Te Huang ,  Su-Yu Yeh ,  Meng-Shiun Shieh ,  Jang-Cheng Hsieh ,  Chung-Te Lin

IPC: H01L2176

CPC classification number: H01L21/76232

Abstract: A method for forming lining oxide in an opening for a shallow trench isolation and a method for forming a shallow trench isolation incorporating a lining oxide layer are described. In the method for forming lining oxide, a silicon substrate is first provided, followed by a process of forming a pad oxide layer and a silicon nitride mask sequentially on top of the silicon substrate. A trench opening is then patterned and formed in the silicon substrate for the shallow trench isolation. The silicon substrate is then annealed at a temperature of at least 1,000° C. in a furnace in an environment that contains not more than 10 vol. % oxygen. A lining oxide layer is formed in the same furnace used for annealing the structure of the trench opening in the silicon substrate.

Abstract translation: 描述了在用于浅沟槽隔离的开口中形成衬里氧化物的方法和形成包含衬里氧化物层的浅沟槽隔离的方法。 在形成衬垫氧化物的方法中，首先提供硅衬底，然后依次在硅衬底的顶部上形成衬垫氧化物层和氮化硅掩模的工艺。 然后将沟槽开口图案化并形成在用于浅沟槽隔离的硅衬底中。 然后将硅衬底在至少1000℃的温度下在炉中在包含不超过10体积％的环境中退火。 ％氧气。 在用于退火硅衬底中的沟槽开口的结构的同一炉中形成衬里氧化物层。