公开(公告)号：US20080079043A1

公开(公告)日：2008-04-03

申请号：US11857001

申请日：2007-09-18

Applicant: Mi Jin KIM ,  Bong Ki MHEEN ,  Young Joo SONG

Inventor： Mi Jin KIM ,  Bong Ki MHEEN ,  Young Joo SONG

IPC: H01L27/146

CPC classification number: H01L27/14609 ,  H01L27/14603 ,  H01L27/1463 ,  H01L27/14689

Abstract: Provided is a light sensing pixel including an image sensor. In a general four-transistor Complementary Metal-Oxide Semiconductor (CMOS) image sensor, unlike a conventional structure, a transfer transistor in a pixel includes a depletion region separated from a channel that is not influenced by a turn-on voltage of the transfer transistor regardless of a driving voltage or a driving method when a photodiode is reset and transferred. As a result, dark current or fixed pattern noise, caused by a change in operating condition of the transfer transistor and inconsistent characteristics between the pixels, is reduced.The image sensor includes a light sensing pixel that includes the transfer transistor for transferring a light-induced charge generated by the photodiode. The light sensing pixel, to dispose the depletion region between the channel of the transfer transistor and a diffusion node, i.e., to operate in the similar pinch-off state, may have a structure in which an insulating layer of the diffusion node side is thicker than a gate insulating layer adjacent to the photodiode in the transfer transistor. That is, the insulating layer of the transfer transistor has steps or a gradual change in thickness. Also, the light sensing pixel may have a structure in which pocket/halo implant using electrically the same material as a doping material of a substrate is performed between the channel of the transfer transistor and the diffusion node.

Abstract translation: 提供了包括图像传感器的感光像素。 在通常的四晶体管互补金属氧化物半导体（CMOS）图像传感器中，与传统结构不同，像素中的传输晶体管包括与不受传输晶体管的导通电压影响的沟道分离的耗尽区 不管驱动电压或驱动方式如何，当光电二极管复位和传输时。 结果，由于转移晶体管的工作状态的变化引起的暗电流或固定图案噪声减小了。 该图像传感器包括光传感像素，其包括用于传输由光电二极管产生的光感应电荷的传输晶体管。 为了在传输晶体管的沟道和扩散节点之间设置耗尽区，即以类似的夹断状态工作的光感测像素可以具有其中扩散节点侧的绝缘层较厚的结构 比与传输晶体管中的光电二极管相邻的栅绝缘层。 也就是说，转移晶体管的绝缘层具有步骤或厚度的逐渐变化。 此外，光感测像素可以具有这样的结构，其中在传输晶体管的沟道和扩散节点之间执行使用与衬底的掺杂材料相同的材料的袋/晕注入。

公开(公告)号：US06551374B2

公开(公告)日：2003-04-22

申请号：US09828969

申请日：2001-04-10

Applicant: Jung Mann Doh ,  Jong Ku Park ,  Mi Jin Kim

Inventor： Jung Mann Doh ,  Jong Ku Park ,  Mi Jin Kim

IPC: B22F324

CPC classification number: B22F1/0003 ,  B22F2998/00 ,  H01H1/0206 ,  B22F3/1035 ,  B22F3/14 ,  B22F3/26

Abstract: The present invention relates to a method of controlling the microstructures of Cu—Cr-based contact materials for vacuum interrupters, in which a heat-resistant element is added to the Cu—Cr-based contact materials to obtain an excellent current interrupting characteristic and voltage withstanding capability, and contact materials manufactured thereby. The method of controlling the microstructures of Cu—Cr-based contact materials includes the steps of mixing a copper powder used as a matrix material, a chromium powder improving an electrical characteristic of the contact material and a heat-resistant element powder making the chromium particles in the matrix material fine to thereby obtain mixed powder, and subjecting the mixed powder to one treatment selected from sintering, infiltration and hot pressing to thereby obtain a sintered product.