公开(公告)号：US06444542B2

公开(公告)日：2002-09-03

申请号：US09826283

申请日：2001-04-03

Applicant: Theodore S. Moise ,  Guoqiang Xing ,  Mark Visokay ,  Justin F. Gaynor ,  Stephen R. Gilbert ,  Francis Celii ,  Scott R. Summerfelt ,  Luigi Colombo

Inventor： Theodore S. Moise ,  Guoqiang Xing ,  Mark Visokay ,  Justin F. Gaynor ,  Stephen R. Gilbert ,  Francis Celii ,  Scott R. Summerfelt ,  Luigi Colombo

IPC: H01L2176

CPC classification number: H01L27/11502 ,  H01L21/0332 ,  H01L21/31116 ,  H01L21/31144 ,  H01L27/10852 ,  H01L27/11507 ,  H01L28/55

Abstract: A via etch to contact a capacitor with ferroelectric between electrodes together with dielectric on an insulating diffusion barrier includes two-step etch with F-based dielectric etch and Cl- and F-based barrier etch.

Abstract translation: 在电极之间与电介质之间的电介质与绝缘扩散阻挡层之间的电介质接触电容器的通孔蚀刻包括基于F的电介质蚀刻和基于Cl和F的势垒蚀刻的两步蚀刻。