公开(公告)号：US20060281290A1

公开(公告)日：2006-12-14

申请号：US11446151

申请日：2006-06-05

Applicant: Jong-Seon Ahn ,  Joon Kim ,  Jin-Hong Kim ,  Suk-Chul Bang ,  Eun-Kuk Chung ,  Hyung-Mo Yang ,  Chang-Yeon Yoo ,  Yun-Seung Kang ,  Kyung-Tae Jang

Inventor： Jong-Seon Ahn ,  Joon Kim ,  Jin-Hong Kim ,  Suk-Chul Bang ,  Eun-Kuk Chung ,  Hyung-Mo Yang ,  Chang-Yeon Yoo ,  Yun-Seung Kang ,  Kyung-Tae Jang

IPC: H01L21/44 ,  H01L23/48

CPC classification number: H01L23/53271 ,  H01L21/76802 ,  H01L21/76816 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a semiconductor device and method of manufacturing the semiconductor device, a punch-through prevention film pattern and a channel film pattern are formed on an insulation layer. The punch-through prevention pattern and the insulation layer may include nitride and oxide, respectively. The punch-through prevention pattern is located under the channel pattern.