公开(公告)号：US06271087B1

公开(公告)日：2001-08-07

申请号：US09685968

申请日：2000-10-10

申请人： Hiroyuki Kinoshita ,  YongZhong Hu ,  Yu Sun ,  Fei Wang

发明人： Hiroyuki Kinoshita ,  YongZhong Hu ,  Yu Sun ,  Fei Wang

IPC分类号： H01L21336

CPC分类号： H01L21/76897 ,  H01L21/31144 ,  H01L21/76895 ,  H01L2924/3011

摘要： A method of manufacturing a semiconductor device is provided in which multi-layer structures are formed on a semiconductor substrate to form core and peripheral regions. Sidewall spacers are formed around the multi-layer structures and source and drain regions are implanted adjacent the sidewall spacers and a stop layer is deposited over the semiconductor substrate after which a dielectric layer is deposited over the stop layer. A first photoresist contact mask is deposited, processed, and used to etch core contact and peripheral local interconnect openings. The first photoresist contact mask is removed. A second photoresist contact mask is deposited, processed, and used to etch the multi-layer structures to form local interconnect openings. The second photoresist contact mask is removed. A conductive material is deposited over the dielectric layer and in the core and peripheral contact openings and is chemical mechanical planarized to remove the conductive material over the dielectric layer so the conductive material is left isolated in the core contact and peripheral local interconnect openings with core contacts to the source/drain regions and peripheral local interconnect contacts to the multi-layer structures and the source/drain regions.

摘要翻译： 提供一种制造半导体器件的方法，其中在半导体衬底上形成多层结构以形成芯和周边区域。 在多层结构周围形成侧壁间隔物，并且将源极和漏极区域相邻于侧壁间隔物注入，并且在半导体衬底上沉积停止层，之后在停止层上沉积电介质层。 第一光致抗蚀剂接触掩模被沉积，处理并用于蚀刻芯接触和外围局部互连开口。 去除第一光致抗蚀剂接触掩模。 沉积，处理和用于蚀刻多层结构以形成局部互连开口的第二光致抗蚀剂接触掩模。 去除第二光致抗蚀剂接触掩模。 导电材料沉积在电介质层上，并在芯和外围接触开口中沉积，并进行化学机械平面化以去除电介质层上的导电材料，因此导电材料在芯接触区和外围局部互连开口处与芯触点隔离 到源极/漏极区域和外围局部互连触点到多层​​结构和源极/漏极区域。