公开(公告)号：US5133160A

公开(公告)日：1992-07-28

申请号：US680236

申请日：1984-12-10

申请人： Ingolf Lampert ,  Reinhold Wahlich

发明人： Ingolf Lampert ,  Reinhold Wahlich

IPC分类号： B24B31/00 ,  H01L21/304 ,  H01L21/322

CPC分类号： H01L21/02016 ,  B24B31/003 ,  H01L21/3221 ,  Y10S438/959

摘要： The invention relates to an improved method for removing point defects andoint defect clusters from semiconductor discs, which defects impair the quality of electronic components or structural elements made from such discs. According to the invention, prior to polishing, the semiconductor discs are immersed in a bath containing grains moving in a streaming carrier medium of the bath. One side of the discs are then polished and thereafter the discs are subjected to oxidation processes whereby stacking faults are induced in the rear side of the discs. These stacking faults have an excellent gettering effect on the point defects.

摘要翻译： 本发明涉及一种用于从半导体盘去除点缺陷和点缺陷簇的改进方法，该缺陷损害了由这种盘制成的电子部件或结构元件的质量。 根据本发明，在抛光之前，将半导体盘浸入含有在浴液流载体介质中移动的颗粒的浴中。 然后对圆盘的一侧进行抛光，然后对圆盘进行氧化处理，由此在盘的后侧引起堆垛层错。 这些堆垛层错对点缺陷有很好的吸气作用。