摘要:
A wavelength tunable filter capable of being driven such that reflecting mirrors move more distant as well as closer by using the principle that a direction of the electromagnetic forces changes depending on the direction of the current flowing perpendicular to the external magnetic field. According to the wavelength tunable filter of the present invention, when it is necessary to have the wavelength tuning range and mechanical structure similar to the conventional wavelength tunable filter driven in only one direction, it is possible to lower the maximum force needed to drive the filter to a half, and reduce a probability that a pull-in phenomenon occurs. On the other hand, it is possible to reduce a wavelength change time of the element by increasing a resonant frequency when the same wavelength tuning ranges are implemented by using the same maximum driving forces.
摘要:
Provided is a wavelength tunable optical filter of a micro-electro-mechanical system (MEMS). The wavelength tunable optical filter comprises two optical fibers or optical waveguides having their optical axes aligned to each other, two lens for collimating light at leading ends of the optical fibers or optical waveguides, two or more mirrors formed on a substrate, thermal actuators supporting at least one of the mirrors, wherein one of the mirrors is actuated by thermal expansion of the actuator. Because all mirrors are formed on a substrate, a manufacturing process is simple and an initial resonance wavelength can be precisely adjusted. Since the thermal expansion is generated by the electrical current directly flowing through the thermal actuators, it can be actuated by a low consumption power. Also, since an electrostatic force is not used to move the mirrors, a sticking phenomenon between the mirrors does not occur, and the wavelength can be tunable in a wide range. Since the planar mirrors are arranged in parallel, the light alignment is easily performed, the line width is constant and the insertion loss is low.
摘要:
There is provided a high resolution circuit for converting a capacitance-to-time deviation including a capacitance deviation detecting unit generating two detection signals having a phase difference corresponding to variations of capacitance of an micro electro mechanical system (MEMS) sensor; a capacitance deviation amplifying unit dividing frequencies of the two detection signals to amplify the phase difference corresponding to the capacitance deviation; and a time signal generating unit generating a time signal having a pulse width corresponding to the amplified phase difference.
摘要:
Provided is a loop type micro heat transport device including: a lower plate having a reservoir for storing operating fluid at its upper surface, an evaporating part spaced apart from the reservoir to evaporate the operating fluid, and a condensing part for condensing vapor evaporated from the evaporating part; and an upper plate engaged with an upper surface of the lower plate and formed at a position corresponding to the evaporating part and the condensing part, and including a vapor space having a vapor line through which the vapor evaporated from the evaporating part is transported to the condensing part, wherein the operating fluid is circulated through the reservoir, the evaporating part, and the condensing part. Therefore, it is possible to remarkably improve productivity since its simple structure helps to make the manufacture simple, as well as to improve cooling performance and enabling long distance heat transport.
摘要:
There is provided a high resolution circuit for converting a capacitance-to-time deviation including a capacitance deviation detecting unit generating two detection signals having a phase difference corresponding to variations of capacitance of an micro electro mechanical system (MEMS) sensor; a capacitance deviation amplifying unit dividing frequencies of the two detection signals to amplify the phase difference corresponding to the capacitance deviation; and a time signal generating unit generating a time signal having a pulse width corresponding to the amplified phase difference.
摘要:
In an infrared detection sensor according to the present invention, all material constituting an upper portion of a sensing electrode in a supporting arm region is removed so that a supporting arm has low thermal conductivity. As a result, thermal conductivity of the infrared sensor structure is reduced, and the infrared detection sensor has excellent sensitivity.
摘要:
A resistive material for a bolometer, a bolometer for an infrared detector using the material, and a method of manufacturing the bolometer are provided. In the resistive material, at least one element selected from the group consisting of nitrogen (N), oxygen (O) and germanium (Ge) is included in antimony (Sb). The resistive material has superior properties such as high temperature coefficient of resistance (TCR), low resistivity, a low noise constant, and is easily formed in a thin film structure by sputtering typically used in a complementary metal-oxide semiconductor (CMOS) process, so that it can be used as a resistor for the bolometer for an uncooled infrared detector, and thus provide the infrared detector with superior temperature precision.
摘要:
A micro semiconductor-type pressure sensor and a manufacturing method thereof are provided. The micro semi-conductor-type pressure sensor is implemented by etching a cavity-formation region of a substrate to form a plurality of trenches, oxidizing the plurality of trenches through a thermal oxidation process to form a cavity-formation oxide layer, forming a membrane-formation material layer on upper portions of the cavity-formation oxide layer and the substrate, forming a plurality of etching holes in the membrane-formation material layer, removing the cavity-formation oxide layer through the plurality of etching holes to form a cavity buried in the substrate, forming a membrane reinforcing layer on an upper portion of the membrane-formation material layer to form a membrane for closing the cavity, and forming sensitive films made of a piezoresisive material on an upper portion of the membrane.
摘要:
Provided are resistive materials for a microbolometer, a method for preparation of resistive materials and a microbolometer containing the resistive materials. The resistive materials for the microbolometer include an alloy of silicon and antimony or an alloy of silicon, antimony and germanium, which has a high TCR and a low resistance.
摘要:
Provided are a multilayer-structured bolometer and a method of fabricating the same. In the multilayer-structured bolometer, the number of support arms supporting the body of a sensor structure is reduced to one, and two electrodes are formed on the one support arm. Thus, the sensor structure is electrically connected with a substrate through the only one support arm. According to the multilayer-structured bolometer and method of fabricating the bolometer, the thermal conductivity of the sensor structure is considerably reduced to remarkably improve sensitivity to temperature, and also the pixel size of the bolometer is reduced to obtain high-resolution thermal images. In addition, the multilayer-structured bolometer can have a high fill-factor due to a sufficiently large infrared-absorbing layer, and thus can improve infrared absorbance.