公开(公告)号：US07693125B2

公开(公告)日：2010-04-06

申请号：US11319305

申请日：2005-12-27

Applicant: Bin Chul Ihm ,  Chang Jae Lee ,  Yong Suk Jin ,  Jin Young Chun

Inventor： Bin Chul Ihm ,  Chang Jae Lee ,  Yong Suk Jin ,  Jin Young Chun

IPC: H04J1/00 ,  H04B7/02

CPC classification number: H04L1/1819 ,  H04L1/0656 ,  H04L1/1607 ,  H04L1/1845 ,  H04L5/023

Abstract: A method of supporting a hybrid automatic retransmission request (HARQ) in an orthogonal frequency division multiplexing access (OFDMA) radio access system is disclosed. Preferably, the method comprises receiving a downlink data frame comprising a data map information element and a data burst comprising a plurality of layers, wherein each layer is encoded with a corresponding channel encoder, and wherein the data map information element is configured to support multiple antennas to achieve space time transmit diversity by providing control information associated with each one of the plurality of layers, wherein the control information comprises allocation of acknowledgement status channels corresponding to the plurality of layers, and transmitting in an uplink data frame a plurality of acknowledgement status, each acknowledgement status being associated with whether a corresponding layer of the plurality of layers is properly decoded.

Abstract translation: 公开了一种在正交频分复用接入（OFDMA）无线电接入系统中支持混合自动重传请求（HARQ）的方法。 优选地，所述方法包括接收包括数据映射信息元素和包括多个层的数据突发的下行链路数据帧，其中每个层被对应的信道编码器编码，并且其中所述数据映射信息元素被配置为支持多个天线 通过提供与所述多个层中的每一层相关联的控制信息来实现空间时间发射分集，其中所述控制信息包括对应于所述多个层的确认状态信道的分配，以及在上行链路数据帧中发送多个确认状态， 每个确认状态与所述多个层的对应层是否被适当地解码相关联。

公开(公告)号：US6096646A

公开(公告)日：2000-08-01

申请号：US49205

申请日：1998-03-27

Applicant: Chang Jae Lee ,  Nae Hak Park

Inventor： Chang Jae Lee ,  Nae Hak Park

IPC: H01L21/285 ,  H01L21/205 ,  H01L21/28 ,  H01L21/336 ,  H01L21/768 ,  H01L29/78 ,  H01L21/44

CPC classification number: H01L21/76877

Abstract: A method for forming metal line of a semiconductor device in which, if the aspect ratio of the contact holes is big, contact holes are buried with a CVD method using the HDP method, and the line process is simplified to improve the reliability is disclosed, including the steps of forming an insulating film having a contact hole on a semiconductor substrate; forming a barrier metal layer on the insulating film including the contact hole; and forming a metal line layer on the barrier metal layer with a CVD method using a high density plasma.

Abstract translation: 一种用于形成半导体器件的金属线的方法，其中如果接触孔的纵横比大，则使用HDP法以CVD方法掩埋接触孔，并且简化线工艺以提高可靠性， 包括在半导体衬底上形成具有接触孔的绝缘膜的步骤; 在包括接触孔的绝缘膜上形成阻挡金属层; 以及使用高密度等离子体的CVD法在阻挡金属层上形成金属线层。