公开(公告)号：US20140318697A1

公开(公告)日：2014-10-30

申请号：US14328191

申请日：2014-07-10

Applicant: FUJIFILM Corporation

Inventor： Shiro TAN ,  Kazuhiro FUJIMAKI ,  Atsushi NAKAMURA ,  Yu IWAI ,  Ichiro KOYAMA

IPC: H01L21/673

CPC classification number: H01L21/673 ,  C09J5/04 ,  C09J7/22 ,  C09J7/35 ,  C09J2205/302 ,  H01L21/6835 ,  H01L21/6836 ,  H01L24/13 ,  H01L2221/68331 ,  H01L2221/6834 ,  H01L2221/68363 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2924/12042 ,  H01L2924/00

Abstract: A method for manufacturing a semiconductor device with a treated member, includes: subjecting an adhesive support having a substrate and an adhesive layer capable of increasing or decreasing in adhesiveness upon irradiation with an actinic ray or radiation to pattern exposure of the adhesive layer to provide a high adhesive region and a low adhesive region in the adhesive layer, adhering a first surface of a to-be-treated member to the adhesive layer of the adhesive support, applying a mechanical or chemical treatment to a second surface different from the first surface of the to-be-treated member to obtain a treated member, and detaching the first surface of the treated member from the adhesive layer of the adhesive support.

Abstract translation: 一种用于制造具有处理部件的半导体器件的方法，包括：对具有基底的粘合剂支撑体和能够增加或降低粘附性的粘合剂层进行照射时，用光化射线或辐射照射粘合剂层以图案曝光， 高粘合剂区域和粘合剂层中的低粘合剂区域，将被处理构件的第一表面粘附到粘合剂支撑体的粘合剂层上，对不同于第一表面的第二表面施加机械或化学处理 待处理的构件以获得处理的构件，并且将所处理的构件的第一表面从粘合剂支撑体的粘合剂层分离。