公开(公告)号：US20150001634A1

公开(公告)日：2015-01-01

申请号：US13930611

申请日：2013-06-28

Applicant: Globalfoundries Inc.

Inventor： Jerome Ciavatti ,  Roderick Miller ,  Marc Tarabbia

IPC: H01L27/06 ,  H01L21/8249

CPC classification number: H01L27/0623 ,  H01L21/8249 ,  H01L29/0804 ,  H01L29/735 ,  H01L29/7851

Abstract: One method disclosed herein includes performing at least one common process operation to form a plurality of first gate structures for each of a plurality of field effect transistors and a plurality of second gate structures above a region where a bipolar transistor will be formed and performing an ion implantation process and a heating process to form a continuous doped emitter region that extends under all of the second gate structures. A device disclosed herein includes a first plurality of field effect transistors with first gate structures, a bipolar transistor that has an emitter region and a plurality of second gate structures positioned above the emitter region, wherein the bipolar transistor comprises a continuous doped emitter region that extends laterally under all of the plurality of second gate structures.