公开(公告)号：US20100099241A1

公开(公告)日：2010-04-22

申请号：US12560265

申请日：2009-09-15

申请人： Masahiko MURANO ,  Ichiro Mizushima ,  Tsutomu Sato ,  Shinji Mori ,  Shuji Katsui ,  Hiroshi Itokawa

发明人： Masahiko MURANO ,  Ichiro Mizushima ,  Tsutomu Sato ,  Shinji Mori ,  Shuji Katsui ,  Hiroshi Itokawa

IPC分类号： H01L21/20

CPC分类号： H01L21/02381 ,  H01L21/02378 ,  H01L21/02532 ,  H01L21/02661 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823828 ,  H01L29/66795 ,  H01L29/7848

摘要： A method of fabricating a semiconductor device according to one embodiment includes: removing a native oxide film and adhering silicon nitrides on an area of a Si based substrate in hydrogen gas atmosphere under a condition in which a pressure is a first pressure and a temperature is a first temperature, a silicon nitride-containing member being formed on the Si based substrate, the area being a area not covered by the member; lowering the temperature to a second temperature from the first temperature while maintaining the pressure at the first pressure in hydrogen gas atmosphere; lowering the pressure to a second pressure from the first pressure while maintaining the temperature at the second temperature in hydrogen gas atmosphere; and epitaxially growing a crystal on the area of the Si based substrate in a precursor gas atmosphere after the pressure is lowered to the second pressure, the crystal including at least one of Si and Ge, the precursor gas atmosphere including at least one of hydrogen, Si and Ge.

摘要翻译： 根据一个实施例的制造半导体器件的方法包括：在氢气气氛中，在压力为第一压力和温度为的条件下，除去天然氧化物膜并将硅氮化物粘附在Si基衬底的区域上 第一温度，在所述Si基衬底上形成含氮化硅的构件，所述区域是未被构件覆盖的区域; 将温度从第一温度降低到第二温度，同时保持在氢气气氛中的第一压力下的压力; 将压力从第一压力降低到第二压力，同时将温度保持在第二温度在氢气气氛中; 并且在所述压力降低到所述第二压力之后，在所述Si基基板的所述Si基基板的区域上外延生长晶体，所述晶体包括Si和Ge中的至少一种，所述前体气体气体包括氢， Si和Ge。