公开(公告)号：US20090263957A1

公开(公告)日：2009-10-22

申请号：US12401453

申请日：2009-03-10

申请人： Ichiro MIZUSHIMA ,  Shinji Mori ,  Masahiko Murano ,  Tsutomu Sato ,  Takashi Nakao ,  Hiroshi Itokawa

发明人： Ichiro MIZUSHIMA ,  Shinji Mori ,  Masahiko Murano ,  Tsutomu Sato ,  Takashi Nakao ,  Hiroshi Itokawa

IPC分类号： H01L21/20

CPC分类号： H01L21/02636 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262

摘要： A method of fabricating a semiconductor device according to one embodiment includes: exposing a surface of a semiconductor substrate to a halogen-containing gas that contains at least one of Si and Ge, the semiconductor substrate being provided with a member comprising an oxide and consisting mainly of Si; and exposing the surface of the semiconductor substrate to an atmosphere containing at least one of a Si-containing gas not containing halogen and a Ge-containing gas not containing halogen after starting exposure of the surface of the semiconductor substrate to the halogen-containing gas, thereby epitaxially growing a crystal film containing at least one of Si and Ge on the surface.

摘要翻译： 根据一个实施例的制造半导体器件的方法包括：将半导体衬底的表面暴露于含有Si和Ge中的至少一种的含卤素的气体，所述半导体衬底设置有包含氧化物的构件，主要由 的Si; 以及将半导体衬底的表面开始暴露于含卤素气体之后，将半导体衬底的表面暴露于含有不含卤素的含Si气体和不含卤素的含Ge气体中的至少一种的气氛中， 从而在表面上外延生长含有Si和Ge中的至少一种的晶体膜。

公开(公告)号：US20100167482A1

公开(公告)日：2010-07-01

申请号：US12646097

申请日：2009-12-23

申请人： Shinji MORI ,  Masahiko Murano ,  Ichiro Mizushima

发明人： Shinji MORI ,  Masahiko Murano ,  Ichiro Mizushima

IPC分类号： H01L21/336

CPC分类号： H01L21/823807 ,  H01L21/823857

摘要： There is provided a method of manufacturing a semiconductor device that allows the threshold voltage of a p-type MOSFET to be controlled with accuracy as high as possible in a multi-oxide process.The method forms two types of field-effect transistors including gate insulating films having different film thickness in a first region and a second region on a silicon substrate, respectively, and includes forming a silicon-germanium film (Si1-xGex, 0

摘要翻译： 提供了一种制造半导体器件的方法，其允许在多氧化物工艺中以尽可能高的精度来控制p型MOSFET的阈值电压。 该方法分别形成两种类型的场效应晶体管，其包括在第一区域中具有不同膜厚度的栅极绝缘膜和硅衬底上的第二区域，并且包括形成硅 - 锗膜（Si1-xGex，0

公开(公告)号：US20100099241A1

公开(公告)日：2010-04-22

申请号：US12560265

申请日：2009-09-15

申请人： Masahiko MURANO ,  Ichiro Mizushima ,  Tsutomu Sato ,  Shinji Mori ,  Shuji Katsui ,  Hiroshi Itokawa

发明人： Masahiko MURANO ,  Ichiro Mizushima ,  Tsutomu Sato ,  Shinji Mori ,  Shuji Katsui ,  Hiroshi Itokawa

IPC分类号： H01L21/20

CPC分类号： H01L21/02381 ,  H01L21/02378 ,  H01L21/02532 ,  H01L21/02661 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823828 ,  H01L29/66795 ,  H01L29/7848

摘要： A method of fabricating a semiconductor device according to one embodiment includes: removing a native oxide film and adhering silicon nitrides on an area of a Si based substrate in hydrogen gas atmosphere under a condition in which a pressure is a first pressure and a temperature is a first temperature, a silicon nitride-containing member being formed on the Si based substrate, the area being a area not covered by the member; lowering the temperature to a second temperature from the first temperature while maintaining the pressure at the first pressure in hydrogen gas atmosphere; lowering the pressure to a second pressure from the first pressure while maintaining the temperature at the second temperature in hydrogen gas atmosphere; and epitaxially growing a crystal on the area of the Si based substrate in a precursor gas atmosphere after the pressure is lowered to the second pressure, the crystal including at least one of Si and Ge, the precursor gas atmosphere including at least one of hydrogen, Si and Ge.

摘要翻译： 根据一个实施例的制造半导体器件的方法包括：在氢气气氛中，在压力为第一压力和温度为的条件下，除去天然氧化物膜并将硅氮化物粘附在Si基衬底的区域上 第一温度，在所述Si基衬底上形成含氮化硅的构件，所述区域是未被构件覆盖的区域; 将温度从第一温度降低到第二温度，同时保持在氢气气氛中的第一压力下的压力; 将压力从第一压力降低到第二压力，同时将温度保持在第二温度在氢气气氛中; 并且在所述压力降低到所述第二压力之后，在所述Si基基板的所述Si基基板的区域上外延生长晶体，所述晶体包括Si和Ge中的至少一种，所述前体气体气体包括氢， Si和Ge。

公开(公告)号：US08551871B2

公开(公告)日：2013-10-08

申请号：US13240662

申请日：2011-09-22

申请人： Ichiro Mizushima ,  Shinji Mori ,  Masahiko Murano ,  Tsutomu Sato ,  Takashi Nakao ,  Hiroshi Itokawa

发明人： Ichiro Mizushima ,  Shinji Mori ,  Masahiko Murano ,  Tsutomu Sato ,  Takashi Nakao ,  Hiroshi Itokawa

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02636 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262

摘要： A method of fabricating a semiconductor device according to one embodiment includes: exposing a surface of a semiconductor substrate to a halogen-containing gas that contains at least one of Si and Ge, the semiconductor substrate being provided with a member comprising an oxide and consisting mainly of Si; and exposing the surface of the semiconductor substrate to an atmosphere containing at least one of a Si-containing gas not containing halogen and a Ge-containing gas not containing halogen after starting exposure of the surface of the semiconductor substrate to the halogen-containing gas, thereby epitaxially growing a crystal film containing at least one of Si and Ge on the surface.

摘要翻译： 根据一个实施例的制造半导体器件的方法包括：将半导体衬底的表面暴露于含有Si和Ge中的至少一种的含卤素的气体，所述半导体衬底设置有包含氧化物的构件，主要由 的Si; 以及将半导体衬底的表面开始暴露于含卤素气体之后，将半导体衬底的表面暴露于含有不含卤素的含Si气体和不含卤素的含Ge气体中的至少一种的气氛中， 从而在表面上外延生长含有Si和Ge中的至少一种的晶体膜。

公开(公告)号：US20120090535A1

公开(公告)日：2012-04-19

申请号：US13240662

申请日：2011-09-22

申请人： Ichiro Mizushima ,  Shinji Mori ,  Masahiko Murano ,  Tsutomu Sato ,  Takashi Nakao ,  Hiroshi Itokawa

发明人： Ichiro Mizushima ,  Shinji Mori ,  Masahiko Murano ,  Tsutomu Sato ,  Takashi Nakao ,  Hiroshi Itokawa

IPC分类号： C30B25/02

CPC分类号： H01L21/02636 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262

摘要： A method of fabricating a semiconductor device according to one embodiment includes: exposing a surface of a semiconductor substrate to a halogen-containing gas that contains at least one of Si and Ge, the semiconductor substrate being provided with a member comprising an oxide and consisting mainly of Si; and exposing the surface of the semiconductor substrate to an atmosphere containing at least one of a Si-containing gas not containing halogen and a Ge-containing gas not containing halogen after starting exposure of the surface of the semiconductor substrate to the halogen-containing gas, thereby epitaxially growing a crystal film containing at least one of Si and Ge on the surface.

摘要翻译： 根据一个实施例的制造半导体器件的方法包括：将半导体衬底的表面暴露于含有Si和Ge中的至少一种的含卤素的气体，所述半导体衬底设置有包含氧化物的构件，主要由 的Si; 以及将半导体衬底的表面开始暴露于含卤素气体之后，将半导体衬底的表面暴露于含有不含卤素的含Si气体和不含卤素的含Ge气体中的至少一种的气氛中， 从而在表面上外延生长含有Si和Ge中的至少一种的晶体膜。

公开(公告)号：US08043945B2

公开(公告)日：2011-10-25

申请号：US12401453

申请日：2009-03-10

申请人： Ichiro Mizushima ,  Shinji Mori ,  Masahiko Murano ,  Tsutomu Sato ,  Takashi Nakao ,  Hiroshi Itokawa

发明人： Ichiro Mizushima ,  Shinji Mori ,  Masahiko Murano ,  Tsutomu Sato ,  Takashi Nakao ,  Hiroshi Itokawa

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02636 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262

摘要： A method of fabricating a semiconductor device according to one embodiment includes: exposing a surface of a semiconductor substrate to a halogen-containing gas that contains at least one of Si and Ge, the semiconductor substrate being provided with a member comprising an oxide and consisting mainly of Si; and exposing the surface of the semiconductor substrate to an atmosphere containing at least one of a Si-containing gas not containing halogen and a Ge-containing gas not containing halogen after starting exposure of the surface of the semiconductor substrate to the halogen-containing gas, thereby epitaxially growing a crystal film containing at least one of Si and Ge on the surface.

摘要翻译： 根据一个实施例的制造半导体器件的方法包括：将半导体衬底的表面暴露于含有Si和Ge中的至少一种的含卤素的气体，所述半导体衬底设置有包含氧化物的构件，主要由 的Si; 以及将半导体衬底的表面开始暴露于含卤素气体之后，将半导体衬底的表面暴露于含有不含卤素的含Si气体和不含卤素的含Ge气体中的至少一种的气氛中， 从而在表面上外延生长含有Si和Ge中的至少一种的晶体膜。

公开(公告)号：US08012858B2

公开(公告)日：2011-09-06

申请号：US12560265

申请日：2009-09-15

申请人： Masahiko Murano ,  Ichiro Mizushima ,  Tsutomu Sato ,  Shinji Mori ,  Shuji Katsui ,  Hiroshi Itokawa

发明人： Masahiko Murano ,  Ichiro Mizushima ,  Tsutomu Sato ,  Shinji Mori ,  Shuji Katsui ,  Hiroshi Itokawa

IPC分类号： H01L21/20

CPC分类号： H01L21/02381 ,  H01L21/02378 ,  H01L21/02532 ,  H01L21/02661 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823828 ,  H01L29/66795 ,  H01L29/7848

摘要： A method of fabricating a semiconductor device according to one embodiment includes: removing a native oxide film and adhering silicon nitrides on an area of a Si based substrate in hydrogen gas atmosphere under a condition in which a pressure is a first pressure and a temperature is a first temperature, a silicon nitride-containing member being formed on the Si based substrate, the area being a area not covered by the member; lowering the temperature to a second temperature from the first temperature while maintaining the pressure at the first pressure in hydrogen gas atmosphere; lowering the pressure to a second pressure from the first pressure while maintaining the temperature at the second temperature in hydrogen gas atmosphere; and epitaxially growing a crystal on the area of the Si based substrate in a precursor gas atmosphere after the pressure is lowered to the second pressure, the crystal including at least one of Si and Ge, the precursor gas atmosphere including at least one of hydrogen, Si and Ge.

摘要翻译： 根据一个实施例的制造半导体器件的方法包括：在氢气气氛中，在压力为第一压力和温度为的条件下，除去天然氧化物膜并将硅氮化物粘附在Si基衬底的区域上 第一温度，在所述Si基衬底上形成含氮化硅的构件，所述区域是未被构件覆盖的区域; 将温度从第一温度降低到第二温度，同时保持在氢气气氛中的第一压力下的压力; 将压力从第一压力降低到第二压力，同时将温度保持在第二温度在氢气气氛中; 并且在所述压力降低到所述第二压力之后，在前驱体气体气氛中，在所述Si基基板的区域上外延生长晶体，所述晶体包括Si和Ge中的至少一种，所述前体气体气体包括氢， Si和Ge。