公开(公告)号：US20160042799A1

公开(公告)日：2016-02-11

申请号：US14886536

申请日：2015-10-19

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Andrea D'Alessandro ,  Violante Moschiano

IPC: G11C16/26 ,  G11C16/24

CPC classification number: G11C16/26 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/24

Abstract: Methods of operating a memory include selectively discharging a data line through a memory cell selected for sensing, discharging a sense node to the data line while a voltage level of the sense node is greater than a voltage level of the data line, and inhibiting discharging of the data line to the sense node while the voltage level of the data line is greater than the voltage level of the sense node. Sense circuits include a path between an input node and a sense node facilitating current flow from the sense node to the input node when a voltage level of the sense node is greater than a voltage level of the input node and inhibiting current flow from the input node to the sense node when the voltage level of the sense node is less than the voltage level of the input node.

Abstract translation: 操作存储器的方法包括：选择性地将数据线放电通过选择用于感测的感应节点到数据线的存储单元放电，同时感测节点的电压电平大于数据线的电压电平，并且抑制放电 数据线到数据线的电压电平大于感测节点的电压电平的数据线。 当检测节点的电压电平大于输入节点的电压电平并且阻止来自输入节点的电流流动时，检测电路包括输入节点和感测节点之间的路径，促进从感测节点到输入节点的电流流动 当感测节点的电压电平小于输入节点的电压电平时，到感测节点。