公开(公告)号：US20180366644A1

公开(公告)日：2018-12-20

申请号：US15623461

申请日：2017-06-15

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Dai-Ying Lee ,  Chao-I Wu ,  Yu-Hsuan Lin

IPC: H01L45/00

Abstract: A ReRAM device is provided. The ReRAM device comprises a bottom electrode, a resistance switching layer disposed on the bottom electrode, a top electrode disposed on the resistance switching layer, a metal layer disposed on the top electrode, and a blocking layer covering the metal layer, wherein the blocking layer surrounds the metal layer and the top electrode.

公开(公告)号：US10158068B1

公开(公告)日：2018-12-18

申请号：US15623461

申请日：2017-06-15

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Dai-Ying Lee ,  Chao-I Wu ,  Yu-Hsuan Lin

IPC: H01L45/00

Abstract: A ReRAM device is provided. The ReRAM device comprises a bottom electrode, a resistance switching layer disposed on the bottom electrode, a top electrode disposed on the resistance switching layer, a metal layer disposed on the top electrode, and a blocking layer covering the metal layer, wherein the blocking layer surrounds the metal layer and the top electrode.

公开(公告)号：US09997567B1

公开(公告)日：2018-06-12

申请号：US15587620

申请日：2017-05-05

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Dai-Ying Lee ,  Chao-I Wu ,  Yu-Hsuan Lin

IPC: H01L29/02 ,  H01L27/24 ,  H01L45/00

CPC classification number: H01L27/2436 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/1253 ,  H01L45/147 ,  H01L45/1608 ,  H01L45/1666

Abstract: A semiconductor structure includes a memory structure. The memory structure includes a memory element, a first barrier layer and a second barrier layer. The memory element includes titanium oxynitride. The first barrier layer includes at least one of silicon and silicon oxide. The first barrier layer is disposed on the memory element. The second barrier layer includes at least one of titanium and titanium oxide. The second barrier layer is disposed on the first barrier layer.