公开(公告)号：US4931353A

公开(公告)日：1990-06-05

申请号：US440766

申请日：1989-11-22

Applicant: Minas H. Tanielian

Inventor： Minas H. Tanielian

IPC: H01L21/768 ,  H01L23/525

CPC classification number: H01L23/5254 ,  H01L21/76889 ,  H01L2924/0002 ,  Y10S148/055 ,  Y10S148/09 ,  Y10S148/093

Abstract: In a multi-chip module, a structure for selectively connecting two conductors. A switchable connector (36) is disposed between a first and second portion (30,32) of a copper conductor (28). The switchable connector comprises an amorphous silicon layer (58), which extends between two spacer pads (56) that are electrically connected to the first and second portions of the copper conductor. A barrier layer (60) is formed atop the amorphous silicon, physically separating it from a reactive metal layer (62). The reactive metal layer is coated with an antireflective coating (64). Interaction of the reactive metal layer with the amorphous silicon layer is prevented by the barrier layer until the barrier layer is heated above 500.degree. C. A laser beam (66) is focused on opposite edges of the switchable connector, causing the barrier layer and reactive metal layer to diffuse into the amorphous silicon, forming electrically conductive silicides. Electric current can then flow between the first and second portions of the copper conductor through the silicides and the remainder of the reactive metal layer.

Abstract translation: 在多芯片模块中，用于选择性地连接两个导体的结构。 可切换连接器（36）设置在铜导体（28）的第一和第二部分（30,32）之间。 可切换连接器包括非晶硅层（58），其在与铜导体的第一和第二部分电连接的两个隔离垫（56）之间延伸。 阻挡层（60）形成在非晶硅的顶部，将其与活性金属层（62）物理分离。 反应性金属层涂覆有抗反射涂层（64）。 通过阻挡层防止反应性金属层与非晶硅层的相互作用，直到阻挡层被加热到500℃以上。激光束（66）聚焦在可切换连接器的相对边缘上，导致阻挡层和反应性 金属层扩散到非晶硅中，形成导电硅化物。 然后，电流可以通过硅化物和反应性金属层的其余部分在铜导体的第一和第二部分之间流动。

公开(公告)号：US4924294A

公开(公告)日：1990-05-08

申请号：US317739

申请日：1989-03-01

Applicant: Minas H. Tanielian

Inventor： Minas H. Tanielian

IPC: H01L21/768 ,  H01L23/525

CPC classification number: H01L23/5254 ,  H01L21/76889 ,  H01L2924/0002

Abstract: In a multi-chip module, a structure for selectively connecting two conductors. A switchable connector (36) is disposed between a first and second portion (30,32) of a copper conductor (28). The switchable connector comprises an amorphous silicon layer (58), which extends between two spacer pads (56) that are electrically connected to the first and second portions of the copper conductor. A barrier layer (60) is formed atop the amorphous silicon, physically separating it from a reactive metal layer (62). The reactive metal layer is coated with an antireflective coating (64). Interaction of the reactive metal layer with the amorphous silicon layer is prevented by the barrier layer until the barrier layer is heated above 500.degree. C. A laser beam (66) is focused on opposite edges of the switchable connector, causing the barrier layer and reactive metal layer to diffuse into the amorphous silicon, forming electrically conductive silicides. Electric current can then flow between the first and second portions of the copper conductor through the silicides and the remainder of the reactive metal layer.

公开(公告)号：US4465577A

公开(公告)日：1984-08-14

申请号：US480935

申请日：1983-03-31

Applicant: Minas H. Tanielian

Inventor： Minas H. Tanielian

IPC: C23C14/06 ,  H01C7/00 ,  H01C17/12 ,  C23C15/00

CPC classification number: C23C14/0688 ,  H01C17/12 ,  H01C7/006 ,  Y10T428/24975

Abstract: The subject invention involves the provision of a cermet for providing relatively high resistivity in a relatively small space. The cermet includes a substrate and multiple, ultra-thin, alternating layers of conductive and nonconductive materials on the substrate. Each ultra-thin layer is formed by radio-frequency sputtering to produce layers of discontinuous islands of particles of each of the above materials. The invention also relates to a method of producing such cermets by radio-frequency sputtering.

Abstract translation: 本发明涉及提供用于在较小空间中提供较高电阻率的金属陶瓷。 金属陶瓷包括衬底和在衬底上的多个超薄的交替导电和非导电材料层。 每个超薄层通过射频溅射形成，以产生上述每种材料的不连续的颗粒岛。 本发明还涉及通过射频溅射制造这种金属陶瓷的方法。