公开(公告)号：US20060264004A1

公开(公告)日：2006-11-23

申请号：US11134359

申请日：2005-05-23

申请人： Qin-Yi Tong ,  Gaius Fountain

发明人： Qin-Yi Tong ,  Gaius Fountain

IPC分类号： H01L21/30

CPC分类号： H01L21/76254

摘要： A method for detachable bonding that forms an amorphous silicon layer, or a silicon oxide layer with a high hydrogen content, on an element such as a carrier substrate. A second element, such as a substrate, is bonded to the amorphous silicon layer or silicon oxide layer, and the second element may then have a portion removed. A third element, such as a host or carrier substrate, is bonded to the second element or to the remaining portion of the second element to form a bonded structure. The bonded structure is then heated to cause the first element to detach from the bonded structure.

摘要翻译： 在诸如载体基板的元件上形成非晶硅层或具有高氢含量的氧化硅层的可分离接合的方法。 诸如衬底的第二元件被结合到非晶硅层或氧化硅层，然后第二元件可以去除部分。 诸如主体或载体衬底的第三元件被结合到第二元件或第二元件的剩余部分以形成结合结构。 然后将接合结构加热，使第一元件与接合结构分离。

公开(公告)号：US5915193A

公开(公告)日：1999-06-22

申请号：US444035

申请日：1995-05-18

申请人： Qin-Yi Tong ,  Ulrich Goesele ,  Ling Tong

发明人： Qin-Yi Tong ,  Ulrich Goesele ,  Ling Tong

IPC分类号： H01L21/306 ,  H01L21/304

CPC分类号： H01L21/02052

摘要： Cleaning in periodic acid (H.sub.5 IO.sub.6) aqueous solutions (HI solutions) of particular compositions removes thermally unstable hydrocarbons from the surfaces of semiconductor wafers and enables the direct bonding of semiconductor surfaces such that the bonded interface between these surfaces remains free of bubbles even after heating subsequent to bonding.

摘要翻译： 在特定组合物的高碘酸（H5106）水溶液（HI溶液）中的清洗从半导体晶片的表面除去热不稳定的烃，并且能够直接粘合半导体表面，使得即使在加热之后这些表面之间的结合界面仍然没有气泡 粘合。