-
公开(公告)号:US12104278B2
公开(公告)日:2024-10-01
申请号:US17611138
申请日:2020-03-19
发明人: Tsubasa Honke , Kyoko Okita
IPC分类号: C30B29/06 , C30B29/36 , C30B29/64 , C30B33/00 , H01L21/02 , H01L29/16 , H01L29/36 , C09G1/02 , C09G1/04 , C30B23/00 , C30B23/02
CPC分类号: C30B29/36 , C30B29/06 , C30B33/00 , H01L21/02021 , H01L21/02024 , H01L21/02052 , H01L29/1608 , H01L29/36 , C09G1/02 , C09G1/04 , C30B23/00 , C30B23/02 , C30B23/025 , C30B29/64 , H01L21/02019 , H01L21/02378 , H01L21/02529 , Y10T428/219 , Y10T428/24355 , Y10T428/24777 , Y10T428/24942 , Y10T428/31
摘要: A silicon carbide substrate has a first main surface, a second main surface, and a chamfered portion. The second main surface is opposite to the first main surface. The chamfered portion is contiguous to each of the first main surface and the second main surface. The silicon carbide substrate has a maximum diameter of 150 mm or more. A surface manganese concentration in the chamfered portion is 1×1011 atoms/cm2 or less.
-
公开(公告)号:US20240297036A1
公开(公告)日:2024-09-05
申请号:US18634408
申请日:2024-04-12
发明人: An-Ren ZI , Ching-Yu CHANG
IPC分类号: H01L21/02 , C11D1/02 , C11D1/66 , C11D1/72 , C11D3/43 , G03F7/16 , G03F7/20 , G03F7/30 , G03F7/42 , H01L21/027 , H01L21/308
CPC分类号: H01L21/02057 , C11D1/02 , C11D1/66 , C11D1/72 , C11D3/43 , H01L21/02041 , H01L21/02052 , H01L21/0206 , H01L21/0274 , H01L21/308 , C11D2111/22 , G03F7/16 , G03F7/20 , G03F7/30 , G03F7/422
摘要: A cleaning solution includes a solvent having Hansen solubility parameters: 25>δd>13, 25>δp>3, 30>δh>4; an acid having an acid dissociation constant pKa: −11 pKa>9.5; and a surfactant. The surfactant is an ionic or non-ionic surfactant, selected from
R is substituted or unsubstituted aliphatic, alicyclic, or aromatic group, and non-ionic surfactant has A-X or A-X-A-X structure, where A is unsubstituted or substituted with oxygen or halogen, branched or unbranched, cyclic or non-cyclic, saturated C2-C100 aliphatic or aromatic group, X includes polar functional groups selected from —OH, ═O, —S—, —P—, —P(O2), —C(═O)SH, —C(═O)OH, —C(═O)OR—, —O—, —N—, —C(═O)NH, —SO2OH, —SO2SH, —SOH, —SO2—, —CO—, —CN—, —SO—, —CON—, —NH—, —SO3NH—, and SO2NH.-
3.
公开(公告)号:US20240290665A1
公开(公告)日:2024-08-29
申请号:US18578884
申请日:2022-06-29
申请人: SUMCO Corporation
发明人: Ryosuke TAKAHASHI , Sayaka MAKISE , Mami KUBOTA
CPC分类号: H01L22/20 , H01L21/02052
摘要: This method of cleaning a semiconductor wafer can reliably reduce the LPD count on the wafer surface. The method includes a first step of measuring a contact angle of a surface of a semiconductor wafer under conditions in which a volume of a droplet dripped on the surface differs, a second step of calculating a ratio of change in a measured value of the contact angle to change in the volume of the droplet based on a relationship between the volume of the droplet and the measured value of the contact angle under the conditions, a third step of determining whether pretreatment is necessary for the semiconductor wafer surface based on the ratio, a fourth step of performing the pretreatment on the semiconductor wafer surface according to the determining in the third step, and a fifth step of subsequently performing single-wafer spin cleaning on the semiconductor wafer surface.
-
公开(公告)号:US20240162055A1
公开(公告)日:2024-05-16
申请号:US18141290
申请日:2023-04-28
申请人: SEMES CO., LTD.
发明人: YOUNG JUN SON
IPC分类号: H01L21/67 , H01L21/02 , H01L21/683 , H01L21/687
CPC分类号: H01L21/67051 , H01L21/02052 , H01L21/67034 , H01L21/6838 , H01L21/6875
摘要: A substrate treating apparatus includes a housing having an inner space; a support positioned in the inner space and configured to support a substrate; a treating container having a treating space therein and surrounding the supported substrate. A cleaning unit may supply a liquid to the substrate supporting on the support and a heating unit may heat a fluid that is supplied to the treating space to decrease a relative humidity of the treating space.
-
公开(公告)号:US20240096653A1
公开(公告)日:2024-03-21
申请号:US18469619
申请日:2023-09-19
发明人: Kensuke DEMURA , Satoshi NAKAMURA , Masaya KAMIYA , Minami NAKAMURA , Kosuke TAKAI , Mana TANABE , Kaori UMEZAWA
IPC分类号: H01L21/67 , H01L21/02 , H01L21/687
CPC分类号: H01L21/67051 , H01L21/02052 , H01L21/67023 , H01L21/67109 , H01L21/68764
摘要: According to one embodiment a substrate treatment apparatus incorporates, into a frozen film, a contaminant adhered to a substrate surface by freezing a liquid film on the surface. The apparatus includes a placement part configured to rotate the substrate, a liquid supply part configured to supply a liquid via a nozzle to the frozen film including the contaminant, a moving part configured to move the nozzle parallel to the substrate surface, and a controller configured to control a rotation of the substrate by the placement part, a supply of the liquid by the liquid supply part, and a movement of the nozzle by the moving part. The controller rotates the substrate by controlling the placement part, supplies the liquid to the frozen film by controlling the liquid supply part, and moves the nozzle from a perimeter edge vicinity to a rotation center vicinity of the substrate by controlling the moving part.
-
6.
公开(公告)号:US11935970B2
公开(公告)日:2024-03-19
申请号:US17418356
申请日:2019-12-04
申请人: BK ENERGY CO., LTD.
发明人: Haeng Woo Lee , Hyo Sook Song , Do Hyeon Lee
IPC分类号: H01L31/0216 , H01L21/02 , H01L31/18 , H02S40/10
CPC分类号: H01L31/02167 , H01L21/02052 , H01L31/18 , H02S40/10
摘要: The present invention relates to a method for coating a photovoltaic panel, and a photovoltaic power generating device using same and, more specifically, to a method for coating a photovoltaic panel, and a photovoltaic power generating device using same, wherein the method inhibits various pollutants such as dust and salt from attaching to the surface of a photovoltaic panel so as to increase power generation efficiency. The method for coating a photovoltaic panel, of the present invention, comprises: a water washing step of washing the surface of the photovoltaic panel by, spraying water thereonto; a cleaning liquid applying step of applying a cleaning liquid to the surface of the photovoltaic panel after the water washing step; a rinsing step of spraying washing water after the cleaning liquid applying step so as to remove pollutants and the cleaning liquid on the surface of the photovoltaic panel; and a coating liquid applying step of applying a coating liquid to the surface of the photovoltaic panel after the rinsing step so as to form an anti-stain coating film.
-
7.
公开(公告)号:US11925881B2
公开(公告)日:2024-03-12
申请号:US17233929
申请日:2021-04-19
发明人: Fuping Chen , Hui Wang , Xi Wang , Shena Jia , Danying Wang , Chaowei Jiang , Yingwei Dai , Jian Wang
IPC分类号: B01D19/00 , B08B3/04 , B08B3/08 , B08B3/10 , B08B3/12 , B08B7/04 , F04B15/04 , F04B23/00 , H01L21/02 , H01L21/67 , F04B23/04
CPC分类号: B01D19/0036 , B01D19/00 , B01D19/0031 , B08B3/041 , B08B3/08 , B08B3/10 , B08B3/12 , B08B7/04 , F04B15/04 , F04B23/00 , H01L21/02052 , H01L21/02057 , H01L21/67017 , H01L21/67051 , H01L21/67092 , H01L21/67253 , B08B2203/007 , F04B23/04
摘要: The present invention provides a high temperature chemical solution supply system for cleaning substrates. The system includes a solution tank, a buffer tank, a first pump and a second pump. The solution tank contains high temperature chemical solution. The buffer tank has a tank body, a vent line and a needle valve. The tank body contains the high temperature chemical solution. An end of the vent line connects to the tank body, and the other end of the vent line connects to the solution tank. The needle valve is mounted on the vent line, wherein the needle valve is adjusted to reach a flow rate to vent gas bubbles inside of the high temperature chemical solution out of the buffer tank through the vent line. An inlet of the first pump connects to the solution tank, and an outlet of the first pump connects to the buffer tank. An inlet of the second pump connects to the buffer tank, and an outlet of the second pump connects to a cleaning chamber in which a substrate is cleaned. The present invention also provides an apparatus including the high temperature chemical solution supply system and an ultra or mega sonic device for cleaning the substrate. The present invention also provides methods for cleaning the substrates.
-
公开(公告)号:US11911808B2
公开(公告)日:2024-02-27
申请号:US18181074
申请日:2023-03-09
发明人: Hui Wang , Fufa Chen , Fuping Chen , Jian Wang , Xi Wang , Xiaoyan Zhang , Yinuo Jin , Zhaowei Jia , Liangzhi Xie , Jun Wang , Xuejun Li
IPC分类号: B08B3/12 , B08B1/00 , H01L21/67 , B06B3/02 , B06B1/02 , B08B3/08 , H01L21/02 , H01L21/687 , G08B25/08 , B06B1/06 , B06B3/00 , G08B21/18
CPC分类号: B08B3/12 , B06B1/0284 , B06B3/02 , B08B1/007 , B08B3/08 , H01L21/02052 , H01L21/67051 , H01L21/68764 , B06B1/0644 , B06B3/00 , G08B21/182 , G08B25/08
摘要: A system for controlling damages in cleaning a semiconductor wafer comprising features of patterned structures, the system comprising: a wafer holder for temporary restraining a semiconductor wafer during a cleaning process; an inlet for delivering a cleaning liquid over a surface of the semiconductor wafer; a sonic generator configured to alternately operate at a first frequency and a first power level for a first predetermined period of time and at a second frequency and a second power level for a second predetermined period of time, to impart sonic energy to the cleaning liquid, the first predetermined period of time and the second predetermined period of time consecutively following one another; and a controller programmed to provide the cleaning parameters, wherein at least one of the cleaning parameters is determined such that a percentage of damaged features as a result of the imparting sonic energy is lower than a predetermined threshold.
-
公开(公告)号:US20240047244A1
公开(公告)日:2024-02-08
申请号:US18231378
申请日:2023-08-08
发明人: Koki YOSHIMURA , Hayato HOSAKA
IPC分类号: H01L21/67 , H01L21/02 , H01L21/687
CPC分类号: H01L21/6715 , H01L21/67051 , H01L21/02052 , H01L21/68764
摘要: A liquid processing apparatus provided with a plurality of processors, wherein each of the processors includes a stage on which a substrate is placed, a cup surrounding the stage and the substrate placed thereon, a first processing nozzle and a second processing nozzle configured to supply a first and second processing liquid to the substrate, respectively, a first standby portion where the first processing nozzle stands by, a second standby portion where the second processing nozzle stands by, a first mover configured to move the first processing nozzle between the first standby portion and a first processing position, a second mover configured to move the second processing nozzle between the second standby portion and a second processing position, and a guide shared by the first mover and the second mover such that each of the first mover and the second mover moves in the left-right direction.
-
公开(公告)号:US20240047236A1
公开(公告)日:2024-02-08
申请号:US18138037
申请日:2023-04-22
申请人: SEMES CO., LTD.
发明人: Soo Han SONG , Jung Bong Choi , Kang Seop Yun
CPC分类号: H01L21/67051 , H01L21/02052 , H01L21/6715
摘要: The present disclosure provides an apparatus for treating a substrate, comprising: a chemical discharge pipe; a cover configured to surround the chemical discharge pipe; a buffer disposed in a space between the chemical discharge pipe and the cover; a chemical supplier configured to supply a chemical to the chemical discharge pipe; a cleaning liquid supplier configured to supply a cleaning liquid via the cover; and a dry gas supplier configured to supply a dry gas via the cover, wherein the supplied cleaning liquid is sprayed by passing through the buffer via a space between the outside of the chemical discharge pipe and the inside of the cover to clean a tip of the chemical discharge pipe, and the supplied dry gas is sprayed by passing through the buffer via the space between the outside of the chemical discharge pipe and the inside of the cover to dry the tip of the chemical discharge pipe.
-
-
-
-
-
-
-
-
-