公开(公告)号：US08455881B2

公开(公告)日：2013-06-04

申请号：US13235544

申请日：2011-09-19

申请人： Erdem Arkun ,  Andrew Clark

发明人： Erdem Arkun ,  Andrew Clark

IPC分类号： H01L29/15

CPC分类号： H01L21/02532 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0259 ,  H01L29/127 ,  H01L29/2003

摘要： A virtual substrate structure includes a crystalline silicon substrate with a first layer of III-N grown on the silicon substrate. Ge clusters or quantum dots are grown on the first layer of III-N and a second layer of III-N is grown on the Ge clusters or quantum dots and any portions of the first layer of III-N exposed between the Ge clusters or quantum dots. Additional alternating Ge clusters or quantum dots and layers of III-N are grown on the second layer of III-N forming an upper surface of III-N. Generally, the additional alternating layers of Ge clusters or quantum dots and layers of III-N are continued until dislocations in the III-N adjacent the upper surface are substantially eliminated.

摘要翻译： 虚拟衬底结构包括具有在硅衬底上生长的III-N的第一层的晶体硅衬底。 Ge簇或量子点在III-N的第一层上生长，并且在Ge簇或量子点上生长第二层III-N，并且在Ge簇或量子之间暴露的III-N的第一层的任何部分 圆点 附加的交替的Ge簇或III-N的量子点和层生长在形成III-N的上表面的III-N的第二层上。 通常，Ge簇或III-N的量子点和层的附加交替层继续进行，直到基本上消除了与上表面相邻的III-N中的位错。

公开(公告)号：US20130069039A1

公开(公告)日：2013-03-21

申请号：US13235544

申请日：2011-09-19

申请人： Erdem Arkun ,  Andrew Clark

发明人： Erdem Arkun ,  Andrew Clark

IPC分类号： H01L29/06 ,  H01L21/20 ,  B82Y99/00 ,  B82Y40/00

CPC分类号： H01L21/02532 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0259 ,  H01L29/127 ,  H01L29/2003

摘要： A virtual substrate structure includes a crystalline silicon substrate with a first layer of III-N grown on the silicon substrate. Ge clusters or quantum dots are grown on the first layer of III-N and a second layer of III-N is grown on the Ge clusters or quantum dots and any portions of the first layer of III-N exposed between the Ge clusters or quantum dots. Additional alternating Ge clusters or quantum dots and layers of III-N are grown on the second layer of III-N forming an upper surface of III-N. Generally, the additional alternating layers of Ge clusters or quantum dots and layers of III-N are continued until dislocations in the III-N adjacent the upper surface are substantially eliminated.

摘要翻译： 虚拟衬底结构包括具有在硅衬底上生长的III-N的第一层的晶体硅衬底。 Ge簇或量子点在III-N的第一层上生长，并且在Ge簇或量子点上生长第二层III-N，并且在Ge簇或量子之间暴露的III-N的第一层的任何部分 圆点 附加的交替的Ge簇或III-N的量子点和层生长在形成III-N的上表面的III-N的第二层上。 通常，Ge簇或III-N的量子点和层的附加交替层继续进行，直到基本上消除了与上表面相邻的III-N中的位错。