公开(公告)号：US20210226146A1

公开(公告)日：2021-07-22

申请号：US17221969

申请日：2021-04-05

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Satoshi Seo ,  Satoko Shitagaki ,  Nobuharu Ohsawa ,  Hideko Inoue ,  Kunihiko Suzuki

IPC: H01L51/50 ,  C09K11/06 ,  H01L51/00 ,  H05B33/14 ,  C07D409/10

Abstract: A light-emitting element having high external quantum efficiency is provided. A light-emitting element having low drive voltage is provided. Provided is a light-emitting element which includes a light-emitting layer containing a phosphorescent compound, a first organic compound, and a second organic compound between a pair of electrodes. A combination of the first organic compound and the second organic compound forms an exciplex (excited complex). An emission spectrum of the exciplex overlaps with an absorption band located on the longest wavelength side of an absorption spectrum of the phosphorescent compound. A peak wavelength of the emission spectrum of the exciplex is longer than or equal to a peak wavelength of the absorption band located on the longest wavelength side of the absorption spectrum of the phosphorescent compound.

公开(公告)号：US11050032B2

公开(公告)日：2021-06-29

申请号：US16791231

申请日：2020-02-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Naoaki Hashimoto ,  Tsunenori Suzuki ,  Satoshi Seo ,  Hiromi Seo ,  Hiromitsu Kido

IPC: H01L51/50 ,  H01L27/32 ,  H01L51/52 ,  H01L51/00

Abstract: A light-emitting element that includes a fluorescent material and has a high emission efficiency is provided. A light-emitting element in which a delayed fluorescence component due to TTA accounts for a high proportion of emissive components is provided. A novel light-emitting device with a high emission efficiency and a low power consumption is provided. A light-emitting element includes an anode, a cathode, and an EL layer. The EL layer includes a light-emitting layer including a host material and an electron-transport layer including a first material in contact with the light-emitting layer. The LUMO level of the first material is lower than that of the host material. The proportion of a delayed fluorescence component due to TTA is greater than or equal to 10 percent of the light emission from the EL layer. The proportion of the delayed fluorescence component due to TTA may be greater than or equal to 15 percent of the light emission.

公开(公告)号：US11049908B2

公开(公告)日：2021-06-29

申请号：US16238610

申请日：2019-01-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takahiro Ishisone ,  Satoshi Seo ,  Yusuke Nonaka ,  Nobuharu Ohsawa

IPC: H01L27/32 ,  H01L51/50 ,  H01L51/52 ,  H01L51/00

Abstract: A multicolor light-emitting element that utilizes fluorescence and phosphorescence and is advantageous for practical application is provided. The light-emitting element has a stacked-layer structure of a first light-emitting layer containing a host material and a fluorescent substance and a second light-emitting layer containing two kinds of organic compounds and a substance that can convert triplet excitation energy into luminescence. Note that light emitted from the first light-emitting layer has an emission peak on the shorter wavelength side than light emitted from the second light-emitting layer.

公开(公告)号：US11024809B2

公开(公告)日：2021-06-01

申请号：US15687861

申请日：2017-08-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takeyoshi Watabe ,  Satomi Watabe ,  Hideko Yoshizumi ,  Tomoka Hara ,  Yui Yamada ,  Takahiro Ishisone ,  Hiromitsu Kido ,  Kunihiko Suzuki ,  Satoshi Seo

IPC: H01L51/00 ,  C07D213/06 ,  C07D249/10 ,  C09K11/06 ,  C07F15/00 ,  H01L51/50 ,  G01R33/46

Abstract: In a light-emitting element, a layer including an organic compound includes a light-emitting layer; the light-emitting layer includes a tris iridium complex; and on the assumption that there is a rectangle which covers the iridium complex and in which at least one atom of the iridium complex is located over each of four sides when the iridium complex is two-dimensionally seen from a direction of a C3 symmetry axis of the iridium complex, A×B/C2 is greater than or equal to 2.5, where A represents a maximum length of a long side of the rectangle, B represents a length of a short side of the rectangle when the length of the long side of the rectangle is A, and C represents a width in the direction of the C3 symmetry axis when the iridium complex is two-dimensionally seen from a normal direction of the C3 symmetry axis.

公开(公告)号：US20210111362A1

公开(公告)日：2021-04-15

申请号：US17127045

申请日：2020-12-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoshi Seo ,  Takeyoshi Watabe ,  Satomi Mitsumori

IPC: H01L51/50 ,  C07D241/38 ,  C07D403/12 ,  C07D405/10 ,  C09K11/02 ,  C09K11/06 ,  H01L51/00

Abstract: To provide a light-emitting element with high emission efficiency and low driving voltage. The light-emitting element includes a guest material and a host material. A LUMO level of the guest material is lower than a LUMO level of the host material. An energy difference between the LUMO level and a HOMO level of the guest material is larger than an energy difference between the LUMO level and a HOMO level of the host material. The guest material has a function of converting triplet excitation energy into light emission. An energy difference between the LUMO level of the guest material and the HOMO level of the host material is larger than or equal to energy of light emission of the guest material.

公开(公告)号：US10937965B2

公开(公告)日：2021-03-02

申请号：US16194451

申请日：2018-11-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoshi Seo ,  Nobuharu Ohsawa

IPC: H01L51/00 ,  C09K11/06 ,  H01L51/50 ,  H01L27/32

Abstract: A light-emitting element containing a light-emitting material with high light emission efficiency is provided. The light-emitting element includes a high molecular material and a guest material. The high molecular material includes at least a first high molecular chain and a second high molecular chain. The guest material has a function of exhibiting fluorescence or converting triplet excitation energy into light emission. The first high molecular chain and the second high molecular chain each include a first skeleton, a second skeleton, and a third skeleton, and the first skeleton and the second skeleton are bonded to each other through the third skeleton. The first high molecular chain and the second high molecular chain have a function of forming an excited complex.

公开(公告)号：US10930852B2

公开(公告)日：2021-02-23

申请号：US16704461

申请日：2019-12-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Satoshi Seo ,  Nobuharu Ohsawa ,  Satoko Shitagaki ,  Hideko Inoue ,  Hiroshi Kadoma ,  Harue Osaka ,  Kunihiko Suzuki ,  Yasuhiko Takemura

IPC: H01L51/00

Abstract: A light-emitting element includes a light-emitting layer including a guest, an n-type host and a p-type host between a pair of electrodes, where the difference between the energy difference between a triplet excited state and a ground state of the n-type host (or p-type host) and the energy difference between a triplet excited state and a ground state of the guest is 0.15 eV or more. Alternatively, in such a light-emitting element, the LUMO level of the n-type host is higher than the LUMO level of the guest by 0.1 eV or more, or the HOMO level of the p-type host is lower than the HOMO level of the guest by 0.1 eV or more.

公开(公告)号：US10903440B2

公开(公告)日：2021-01-26

申请号：US15046875

申请日：2016-02-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Satoshi Seo

IPC: H01L51/50 ,  H01L51/52 ,  H01L27/32 ,  C09K11/02 ,  C09K11/06

Abstract: A novel light-emitting element is provided. Alternatively, a novel light-emitting element which can achieve both high efficiency and a long lifetime is provided. The light-emitting element includes a light-emitting layer between a pair of electrodes. The light-emitting element includes a first light-emitting layer and a second light-emitting layer. The first light-emitting layer includes a fluorescent material. The second light-emitting layer includes a phosphorescent material. A difference in peak value between a first emission spectrum of light from the first light-emitting layer and a second emission spectrum of light from the second light-emitting layer is 30 nm or less.

公开(公告)号：US10862041B2

公开(公告)日：2020-12-08

申请号：US16356062

申请日：2019-03-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroshi Kadoma ,  Kaori Ogita ,  Tsunenori Suzuki ,  Satoshi Seo

IPC: H01L51/00 ,  C09K11/06 ,  C07D209/86 ,  H01L51/50 ,  H01L27/32

Abstract: Provided is a light-emitting element with high emission efficiency including a fluorescent material as a light-emitting substance. In a light-emitting element including a pair of electrodes and an EL layer between the pair of electrodes, a delayed fluorescence component due to triplet-triplet annihilation accounts for 20% or more of light emitted from the EL layer, and the light has at least one emission spectrum peak in the blue wavelength range. The EL layer includes an organic compound in which an energy difference between the lowest singlet excited energy level and the lowest triplet excited energy level is 0.5 eV or more. The EL layer includes a benzo[a]anthracene compound.

公开(公告)号：US20200350508A1

公开(公告)日：2020-11-05

申请号：US16906461

申请日：2020-06-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoshi Seo ,  Takeyoshi Watabe ,  Satomi Mitsumori

IPC: H01L51/50 ,  C09K11/06 ,  C09K11/02 ,  H01L51/00

Abstract: To provide a light-emitting element with high emission efficiency and low driving voltage. The light-emitting element includes a guest material and a host material. A HOMO level of the guest material is higher than a HOMO level of the host material. An energy difference between the LUMO level and a HOMO level of the guest material is larger than an energy difference between the LUMO level and a HOMO level of the host material. The guest material has a function of converting triplet excitation energy into light emission. An energy difference between the LUMO level of the host material and the HOMO level of the guest material is larger than or equal to energy of light emission of the guest material.