公开(公告)号：US20210104622A1

公开(公告)日：2021-04-08

申请号：US16826926

申请日：2020-03-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinjoo Park ,  Junhee Choi ,  Kiho Kong ,  Joohun Han ,  Nakhyun Kim ,  Junghun Park

IPC: H01L29/778 ,  H01L27/12 ,  H01L29/66

Abstract: A semiconductor device includes a substrate including a first region and a second region adjacent to the first region, the first and the second regions being disposed in a first direction parallel to an upper surface of the substrate; an etch-stop layer disposed on the first region and the second region; a separation layer disposed on an upper portion of the etch-stop layer, the separation layer being disposed on the first region; a high-electron-mobility transistor (HEMT) element disposed on an upper portion of the separation layer in a second direction perpendicular to an upper surface of the substrate; a light-emitting element disposed on the second region between the substrate and the etch-stop layer; and a plurality of first insulating patterns covering side surfaces of the HEMT element, the plurality of first insulating patterns extending to the etch-stop layer.

公开(公告)号：US20200083405A1

公开(公告)日：2020-03-12

申请号：US16562791

申请日：2019-09-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee CHOI ,  Kiho Kong ,  Jinjoo Park ,  Joohun Han ,  Kyungwook Hwang ,  Sungjin Kang ,  Junghun Park

IPC: H01L33/46 ,  H01L25/16

Abstract: Provided is a light-emitting device including a substrate, a light-emitting pattern provided on the substrate, a first reflection film provided between the light-emitting pattern and the substrate, a second reflection film provided on a side surface of the light-emitting pattern, and a passivation film provided between the light-emitting pattern and the second reflection film, wherein the second reflection film is electrically connected to the light-emitting pattern, and a portion of light generated from the light-emitting pattern is emitted through an upper surface of the light-emitting pattern after being reflected by at least one of the first reflection film and the second reflection film.

公开(公告)号：US20200075665A1

公开(公告)日：2020-03-05

申请号：US16536514

申请日：2019-08-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinjoo Park ,  Hoyoung Ahn ,  Junhee Choi ,  Sungjin Kang ,  Junghun Park

IPC: H01L27/15 ,  H01L33/50 ,  H01L33/14 ,  H01L33/42

Abstract: A high-resolution display device is provided. The high-resolution display device includes a light-emitting layer including a first semiconductor layer, an active layer, and a second semiconductor layer, a plurality of transparent electrodes respectively formed on the second semiconductor layer in sub-pixel regions, a first electrode connected to the first semiconductor layer, a plurality of second electrodes connected to the plurality of transparent electrodes, a color-converting layer arranged over the light-emitting layer and configured to emit light of a predetermined color based on light generated by the light-emitting layer, which are sequentially stacked on a substrate including a plurality of sub-pixel regions. One or more ion injection regions corresponding to current injection regions corresponding to the plurality of the sub-pixel regions is formed in the second semiconductor layer.