公开(公告)号：US11171135B2

公开(公告)日：2021-11-09

申请号：US16896423

申请日：2020-06-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyojin Kim ,  Jihye Lee ,  Sangmoon Lee ,  Seung Hun Lee

IPC: H01L27/092 ,  H01L29/161

Abstract: A semiconductor device including a substrate; a first active pattern on the substrate and extending in a first direction, an upper portion of the first active pattern including a first channel pattern; first source/drain patterns in recesses in an upper portion of the first channel pattern; and a gate electrode on the first active pattern and extending in a second direction crossing the first direction, the gate electrode being on a top surface and on a side surface of the at least one first channel pattern, wherein each of the first source/drain patterns includes a first, second, and third semiconductor layer, which are sequentially provided in the recesses, each of the first channel pattern and the third semiconductor layers includes silicon-germanium (SiGe), and the first semiconductor layer has a germanium concentration higher than those of the first channel pattern and the second semiconductor layer.

公开(公告)号：US10707783B2

公开(公告)日：2020-07-07

申请号：US15351125

申请日：2016-11-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bongjae Rhee ,  Sungsoo Moon ,  Kemsuk Seo ,  Sangmoon Lee ,  Changsu Lee ,  Jihun Heo

IPC: H02N1/08 ,  H02N1/00

Abstract: An electrostatic induction device is provided which includes at least one first element including a first electrode, a second electrode electrically connected to the first electrode, and a third electrode electrically connected to the first electrode and the second electrode, at least one second element including a charged area having been charged with positive or negative charges and moves while adjacent to the first element so as to cause an electrostatic induction action with the first element, and a third element which is electrically connected to the first element, and receives, from the first element, a first electric current generated between the first and the second electrode, a second electric current generated between the first and the third electrode, and a third electric current generated between the second and the third electrode, by the movement of the second element, and rectifies the received first, second and third electric currents.

公开(公告)号：US10304834B2

公开(公告)日：2019-05-28

申请号：US15939914

申请日：2018-03-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangmoon Lee ,  Jungtaek Kim ,  Yihwan Kim ,  Woo Bin Song ,  Dongsuk Shin ,  Seung Ryul Lee

IPC: H01L29/78 ,  H01L27/092 ,  H01L21/84 ,  H01L29/66 ,  H01L21/8238 ,  H01L27/088 ,  H01L27/12

Abstract: A semiconductor device and a method of fabricating a semiconductor device, the device including a substrate; an active pattern spaced apart from the substrate and extending in a first direction; and a gate structure on the active pattern and extending in a second direction crossing the first direction, wherein a lower portion of the active pattern extends in the first direction and includes a first lower surface that is sloped with respect to an upper surface of the substrate.