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1.发明授权公开(公告)号：US11417731B2
公开(公告)日：2022-08-16
申请号：US17128153
申请日：2020-12-20
发明人： Jinbum Kim , Dahye Kim , Seokhoon Kim , Jaemun Kim , Ilgyou Shin , Haejun Yu , Kyungin Choi , Kihyun Hwang , Sangmoon Lee , Seung Hun Lee , Keun Hwi Cho
IPC分类号： H01L29/08 , H01L27/092 , H01L29/165 , H01L29/423 , H01L29/66 , H01L29/78 , H01L29/786 , H01L29/161 , H01L29/06 , H01L21/8238
摘要： A semiconductor device includes an active pattern on a substrate, a pair of source/drain patterns on the active pattern, a channel pattern between the pair of source/drain patterns, the channel pattern including semiconductor patterns stacked to be spaced apart from each other, and a gate electrode crossing the channel pattern and extending in a first direction. One of the pair of source/drain patterns includes a first semiconductor layer and a second semiconductor layer thereon. The first semiconductor layer is in contact with a first semiconductor pattern, which is one of the stacked semiconductor patterns. The largest widths of the first semiconductor pattern, the first semiconductor layer, and the second semiconductor layer in the first direction are a first width, a second width, a third width, respectively, and the second width is larger than the first width and smaller than the third width.
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公开(公告)号：US11177346B2
公开(公告)日：2021-11-16
申请号：US16666958
申请日：2019-10-29
发明人： Ki Hwan Kim , Sunguk Jang , Pankwi Park , Sangmoon Lee , Sujin Jung
摘要： A semiconductor device including an active fin that protrudes from a substrate and forms a plurality of recess regions spaced apart from each other, a gate pattern between the plurality of recess regions that covers a lateral surface and a top surface of the active fin, a plurality of source/drain patterns in the plurality of recess regions, and a diffusion reduction region adjacent to each of a plurality of bottoms of the plurality of recess regions and each of a plurality of sidewalls of the plurality of recess regions, the diffusion reduction region including a dopant having a lower diffusion coefficient than phosphorus (P).
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公开(公告)号：US09986082B2
公开(公告)日：2018-05-29
申请号：US15011227
申请日：2016-01-29
发明人： Changsu Lee , Sungsoo Moon , Kemsuk Seo , Bongjae Rhee , Sangmoon Lee
CPC分类号： H04M1/72527 , H04M1/0274 , H04R1/1041 , H04R29/001 , H04R2440/07
摘要： An interface device and method between an electronic device and an external device using an ear jack of a smart device are disclosed in order to implement an interface that is capable of automatically recognizing an ear jack insertion type appcessory. The interface device includes: an electronic device including an ear jack including a plurality of audio signal input and output terminals; an external device including an interface unit including a connector unit configured to be inserted into the ear jack, the connector unit including a plurality of terminals that correspond to the plurality of audio signal input and output terminals provided in the ear jack of the electronic device, respectively; and a recognizing unit on the connector unit of the interface unit configured to recognize whether the external device is connected to the ear jack of the electronic device through a plurality of detections.
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4.发明申请INTERFACE DEVICE AND METHOD BETWEEN ELECTRONIC DEVICE AND EXTERNAL DEVICE USING EAR JACK OF THE ELECTRONIC DEVICE 有权使用电子设备的耳塞的电子设备和外部设备之间的接口设备和方法公开(公告)号：US20160227018A1
公开(公告)日：2016-08-04
申请号：US15011227
申请日：2016-01-29
发明人： Changsu Lee , Sungsoo Moon , Kemsuk Seo , Bongjae Rhee , Sangmoon Lee
IPC分类号： H04M1/725
CPC分类号： H04M1/72527 , H04M1/0274 , H04R1/1041 , H04R29/001 , H04R2440/07
摘要： An interface device and method between an electronic device and an external device using an ear jack of a smart device are disclosed in order to implement an interface that is capable of automatically recognizing an ear jack insertion type appcessory. The interface device includes: an electronic device including an ear jack including a plurality of audio signal input and output terminals; an external device including an interface unit including a connector unit configured to be inserted into the ear jack, the connector unit including a plurality of terminals that correspond to the plurality of audio signal input and output terminals provided in the ear jack of the electronic device, respectively; and a recognizing unit on the connector unit of the interface unit configured to recognize whether the external device is connected to the ear jack of the electronic device through a plurality of detections.
摘要翻译： 公开了使用智能设备的耳塞的电子设备和外部设备之间的接口设备和方法，以实现能够自动识别耳塞插入型接口的接口。 所述接口装置包括：电子设备，其包括具有多个音频信号输入和输出端子的耳塞; 包括接口单元的外部设备，所述接口单元包括被配置为插入到所述耳塞中的连接器单元，所述连接器单元包括对应于设置在所述电子设备的所述耳塞中的所述多个音频信号输入和输出端子的多个端子， 分别; 以及接口单元的连接器单元上的识别单元，被配置为通过多个检测来识别外部设备是否连接到电子设备的耳塞。
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公开(公告)号：US20210151319A1
公开(公告)日：2021-05-20
申请号：US17006799
申请日：2020-08-29
发明人： Gyeom Kim , Dongwoo Kim , Jihye Yi , JinBum Kim , Sangmoon Lee , Seunghun Lee
IPC分类号： H01L21/02 , H01L21/285 , H01L21/768 , H01L21/8234 , H01L29/08 , H01L29/165 , H01L29/417 , H01L29/66
摘要： A semiconductor device is provided. The semiconductor device includes: an active region on a semiconductor substrate; a channel region on the active region; a source/drain region adjacent to the channel region on the active region; a gate structure overlapping the channel region, on the channel region; a contact structure on the source/drain region; a gate spacer between the contact structure and the gate structure; and a contact spacer surrounding a side surface of the contact structure. The source/drain region includes a first epitaxial region having a recessed surface and a second epitaxial region on the recessed surface of the first epitaxial region, and the second epitaxial region includes an extended portion, extended from a portion overlapping the contact structure in a vertical direction, in a horizontal direction and overlapping the contact spacer in the vertical direction.
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公开(公告)号：US11006210B2
公开(公告)日：2021-05-11
申请号：US16202911
申请日：2018-11-28
发明人： Sangchul Ko , Sangmoon Lee , Byeonggeun Cheon , Dongkyu Park , Donghyun Jung
摘要： An apparatus for outputting an audio signal includes: a channel processor configured to generate two or more channel signals from audio data; a signal processor configured to render the generated two or more channel signals; and a directional speaker configured to reproduced a rendered channel signal as an audible sound. The signal processor may include a frequency converter configured to generate a channel signal of a frequency domain by converting the generated two or more channel signals through frequency conversion, and a re-panner configured to change a channel gain of at least one of the generated channel signals by as much as an adjustment value for the channel gain, wherein the adjustment value is monotonically changed as a frequency of the channel signal of the frequency domain increases.
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公开(公告)号：US20230065755A1
公开(公告)日：2023-03-02
申请号：US17709940
申请日：2022-03-31
发明人： Sangmoon Lee , Jinbum Kim , Dongsuk Shin
IPC分类号： H01L29/417 , H01L29/78 , H01L29/15
摘要： A semiconductor device includes: an active region extending on a substrate in a first direction; a gate structure intersecting the active region and extending on the substrate in a second direction; and a source/drain region on the active region on at least one side of the gate structure. The source/drain region may include a first epitaxial layer on the active region and including impurities of a first conductivity type in a first concentration, a second epitaxial layer on the first epitaxial layer and including the impurities of the first conductivity type in a second concentration, and a first barrier layer between the first epitaxial layer and the second epitaxial layer, wherein the first barrier layer includes doped oxygen.
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公开(公告)号：US20230051602A1
公开(公告)日：2023-02-16
申请号：US17725180
申请日：2022-04-20
发明人： Beomjin PARK , Hyojin Kim , Myung Gil Kang , Jinbum Kim , Sangmoon Lee , Dongwon Kim , Keun Hwi Cho
IPC分类号： H01L29/423 , H01L29/786 , H01L29/66
摘要： A semiconductor device is provided. The semiconductor device includes: an active pattern provided on a substrate and extending in a first direction; a pair of source/drain patterns provided on the active pattern and spaced apart from each other in the first direction; a plurality of channel layers vertically stacked and spaced apart from each other on the active pattern between the pair of source/drain patterns; a gate electrode extending in a second direction between the pair of source/drain patterns, the gate electrode being provided on the active pattern and surrounding the plurality of channel layers, and the second direction intersecting the first direction; and a gate spacer provided between the plurality of channel layers, and between the gate electrode and the pair of source/drain patterns. The gate spacer includes a plurality of first spacer patterns and a plurality of second spacer patterns that are alternately stacked on sidewalls of the pair of source/drain patterns.
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公开(公告)号：US11171135B2
公开(公告)日：2021-11-09
申请号：US16896423
申请日：2020-06-09
发明人： Hyojin Kim , Jihye Lee , Sangmoon Lee , Seung Hun Lee
IPC分类号： H01L27/092 , H01L29/161
摘要： A semiconductor device including a substrate; a first active pattern on the substrate and extending in a first direction, an upper portion of the first active pattern including a first channel pattern; first source/drain patterns in recesses in an upper portion of the first channel pattern; and a gate electrode on the first active pattern and extending in a second direction crossing the first direction, the gate electrode being on a top surface and on a side surface of the at least one first channel pattern, wherein each of the first source/drain patterns includes a first, second, and third semiconductor layer, which are sequentially provided in the recesses, each of the first channel pattern and the third semiconductor layers includes silicon-germanium (SiGe), and the first semiconductor layer has a germanium concentration higher than those of the first channel pattern and the second semiconductor layer.
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公开(公告)号：US10707783B2
公开(公告)日：2020-07-07
申请号：US15351125
申请日：2016-11-14
发明人： Bongjae Rhee , Sungsoo Moon , Kemsuk Seo , Sangmoon Lee , Changsu Lee , Jihun Heo
摘要： An electrostatic induction device is provided which includes at least one first element including a first electrode, a second electrode electrically connected to the first electrode, and a third electrode electrically connected to the first electrode and the second electrode, at least one second element including a charged area having been charged with positive or negative charges and moves while adjacent to the first element so as to cause an electrostatic induction action with the first element, and a third element which is electrically connected to the first element, and receives, from the first element, a first electric current generated between the first and the second electrode, a second electric current generated between the first and the third electrode, and a third electric current generated between the second and the third electrode, by the movement of the second element, and rectifies the received first, second and third electric currents.
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