公开(公告)号：US5283759A

公开(公告)日：1994-02-01

申请号：US900482

申请日：1992-06-18

Applicant: Stuart Smith

Inventor： Stuart Smith

IPC: G11C16/04 ,  G11C17/14 ,  G11C16/02

CPC classification number: G11C17/14 ,  G11C16/0433

Abstract: The invention relates to a one-time-programmable read-only memory cell, abbreviated as PROM. According to the prior art, PROM cells are programmed by the deliberate destruction of a component. Since the information is burnt into the memory cell in this way, a PROM cell can only be programmed once. If read-only memory cells are to be electrically programmed and cleared several times, floating gate transistors in particular are used. With the floating gate transistor, the information is stored as a charge on a completely insulated gate electrode. If PROM and EEPROM memory cells are now integrated on a common chip, this requires additional circuitry due to the different voltage requirements of the two different memory cells. In accordance with the invention, a repeatedly electrically programmable read-only memory is connected such that it can only be electrically programmed once.

Abstract translation: 本发明涉及一次性可编程只读存储器单元，简称PROM。 根据现有技术，通过故意破坏部件来编程PROM单元。 由于信息以这种方式被烧录到存储单元中，PROM单元只能被编程一次。 如果只读存储器单元被电编程和清除几次，则特别地使用浮栅晶体管。 利用浮栅晶体管，信息作为电荷存储在完全绝缘的栅电极上。 如果PROM和EEPROM存储器单元现在集成在公共芯片上，则由于两个不同存储单元的不同电压要求，这需要额外的电路。 根据本发明，重复的电可编程只读存储器被连接，使得它只能被电编程一次。