Positive active material for lithium secondary battery and a method of preparing the same
    41.
    发明申请
    Positive active material for lithium secondary battery and a method of preparing the same 审中-公开
    锂二次电池用正极活性物质及其制备方法

    公开(公告)号:US20070122338A1

    公开(公告)日:2007-05-31

    申请号:US11643672

    申请日:2006-12-22

    IPC分类号: C01G45/12 H01M4/50

    摘要: Disclosed is a positive active material for a lithium secondary battery and a preparation method of the same, in particular a positive active material and preparation method of the same that can improve cycle-life characteristics at a high temperature and room temperature, and storage characteristics at a high temperature. The present invention has the effect of providing a positive active material and preparation method of the same that can improve cycle-life characteristics at room temperature and at a high temperature, and storage characteristics at a high temperature, by coating the surface of the lithium manganese spinel oxide particles with a lithium metal complex oxide.

    摘要翻译: 公开了一种用于锂二次电池的正极活性材料及其制备方法,特别是正极活性材料及其制备方法,其可以改善高温和室温下的循环寿命特性,以及储存特性 高温。 本发明的效果是提供一种正极活性物质及其制备方法,其可以通过涂覆锂锰的表面,从而提高室温和高温下的循环寿命特性和高温下的储存特性 具有锂金属复合氧化物的尖晶石氧化物颗粒。

    Methods for fabricating integrated circuit devices using antiparallel diodes to reduce damage during plasma processing

    公开(公告)号:US06664140B2

    公开(公告)日:2003-12-16

    申请号:US10050504

    申请日:2002-01-16

    IPC分类号: H01L2182

    摘要: An integrated circuit includes first and second diodes that are electrically connected to a conductive line in antiparallel, to dissipate both positive and negative charges on the conductive line during plasma processing. The integrated circuit also includes a fuse for disconnecting one of the first and second diodes from the conductive line after the plasma processing, to thereby allow conduction of one of positive and negative charge on the conductive line after the plasma processing. Accordingly, integrated circuits are fabricated by forming a conductive line on an integrated circuit substrate and first and second diodes in the integrated circuit substrate that are electrically connected to the conductive line in antiparallel. Then, plasma processing is performed on the integrated circuit substrate including the conductive line and the first and second diodes, such that the first and second diodes dissipate both positive and negative charges on the conductive line during the plasma processing. Then, one of the first and second diodes is disconnected from the conductive line after performing the plasma processing, to thereby allow conduction of one of positive and negative charge on the conductive line after performing the plasma processing.

    Integrated circuit devices that use antiparallel diodes to reduce damage during plasma processing
    43.
    发明授权
    Integrated circuit devices that use antiparallel diodes to reduce damage during plasma processing 失效
    使用反并联二极管减少等离子体处理过程中的损坏的集成电路器件

    公开(公告)号:US06365938B2

    公开(公告)日:2002-04-02

    申请号:US09333184

    申请日:1999-06-14

    IPC分类号: H01L2978

    摘要: An integrated circuit includes first and second diodes that are electrically connected to a conductive line in antiparallel, to dissipate both positive and negative charges on the conductive line during plasma processing. The integrated circuit also includes a fuse for disconnecting one of the first and second diodes from the conductive line after the plasma processing, to thereby allow conduction of one of positive and negative charge on the conductive line after the plasma processing. Accordingly, integrated circuits are fabricated by forming a conductive line on an integrated circuit substrate and first and second diodes in the integrated circuit substrate that are electrically connected to the conductive line in antiparallel. Then, plasma processing is performed on the integrated circuit substrate including the conductive line and the first and second diodes, such that the first and second diodes dissipate both positive and negative charges on the conductive line during the plasma processing. Then, one of the first and second diodes is disconnected from the conductive line after performing the plasma processing, to thereby allow conduction of one of positive and negative charge on the conductive line after performing the plasma processing.

    摘要翻译: 集成电路包括反平行地电连接到导线的第一和第二二极管,以在等离子体处理期间消散导电线上的正电荷和负电荷。 集成电路还包括用于在等离子体处理之后从导电线断开第一和第二二极管中的一个的保险丝,从而允许在等离子体处理之后导电线路中的正电荷和负电荷之一导通。 因此,集成电路通过在集成电路基板上形成导线,并且在集成电路基板中与反向平行地电连接到导线上的第一和第二二极管形成。 然后,在包括导线和第一和第二二极管的集成电路基板上执行等离子体处理,使得第一和第二二极管在等离子体处理期间在导电线上消耗正电荷和负电荷。 然后,在执行等离子体处理之后,第一和第二二极管中的一个与导线断开,从而在执行等离子体处理之后允许在导电线上导通正电荷和负电荷之一。

    Identification of a potent antioxidant from Aloe barbadensis
    44.
    发明授权
    Identification of a potent antioxidant from Aloe barbadensis 失效
    从芦荟中鉴定出有效的抗氧化剂

    公开(公告)号:US5939395A

    公开(公告)日:1999-08-17

    申请号:US973059

    申请日:1998-09-18

    CPC分类号: A61K36/886

    摘要: The present invention is directed to a method for providing an antioxidant compound to a patient in need thereof which comprises the administration of a phenolic compound isolated from Aloe barbadensis and to methods for isolating the phenolic compound.

    摘要翻译: PCT No.PCT / US95 / 07404 Sec。 371日期:1998年9月18日 102(e)1998年9月18日PCT PCT 1995年6月7日PCT公布。 WO96 / 40182 PCT出版物 日期:1996年12月19日本发明涉及向有需要的患者提供抗氧化剂化合物的方法,其包括施用从芦荟中分离的酚类化合物和分离酚类化合物的方法。