公开(公告)号：US20210367042A1

公开(公告)日：2021-11-25

申请号：US17392320

申请日：2021-08-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Hsien Huang ,  Chang-Ting Chung ,  Wei-Cheng Lin ,  Wei-Jung Lin ,  Chih-Wei Chang

IPC: H01L29/40 ,  H01L21/02 ,  H01L21/768 ,  H01L21/311 ,  H01L21/285 ,  H01L29/66 ,  H01L29/417

Abstract: Methods of forming contacts for source/drain regions and a contact plug for a gate stack of a finFET device are disclosed herein. Methods include etching a contact opening through a dielectric layer to expose surfaces of a first source/drain contact and repairing silicon oxide structures along sidewall surfaces of the contact opening and along planar surfaces of the dielectric layer to prevent selective loss defects from occurring during a subsequent selective deposition of conductive fill materials and during subsequent etching of other contact openings. The methods further include performing a selective bottom-up deposition of conductive fill material to form a second source/drain contact. According to some of the methods, once the second source/drain contact has been formed, the contact plug may be formed over the gate stack.

公开(公告)号：US20200013674A1

公开(公告)日：2020-01-09

申请号：US16571536

申请日：2019-09-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chun-Hsien Huang ,  Hong-Mao Lee ,  Hsien-Lung Yang ,  Yu-Kai Chen ,  Wei-Jung Lin

IPC: H01L21/768 ,  H01L21/8238

Abstract: A semiconductor device is disclosed. The device includes a source/drain feature formed over a substrate. A dielectric layer formed over the source/drain feature. A contact trench formed through the dielectric layer to expose the source/drain feature. A titanium nitride (TiN) layer deposited in the contact trench and a cobalt layer deposited over the TiN layer in the contact trench.

公开(公告)号：US10418279B2

公开(公告)日：2019-09-17

申请号：US15628267

申请日：2017-06-20

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chun-Hsien Huang ,  Hong-Mao Lee ,  Hsien-Lung Yang ,  Yu-Kai Chen ,  Wei-Jung Lin

IPC: H01L21/78 ,  H01L21/768 ,  H01L21/8238

Abstract: A semiconductor device is disclosed. The device includes a source/drain feature formed over a substrate. A dielectric layer formed over the source/drain feature. A contact trench formed through the dielectric layer to expose the source/drain feature. A titanium nitride (TiN) layer deposited in the contact trench and a cobalt layer deposited over the TiN layer in the contact trench.

公开(公告)号：US20180026031A1

公开(公告)日：2018-01-25

申请号：US15714226

申请日：2017-09-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： I-Tseng Chen ,  Hon-Lin Huang ,  Chun-Hsien Huang ,  Yu-Hung Lin

IPC: H01L27/06 ,  H01L21/02 ,  H01L21/8234 ,  H01L49/02

CPC classification number: H01L27/0629 ,  H01L21/02271 ,  H01L21/823437 ,  H01L28/20

Abstract: A method for forming a semiconductor device structure is provided. The method includes providing a substrate. The method includes transferring the substrate from a stage to a deposition chamber, and no heating operation is performed on the stage. The method also includes depositing a resistor layer on the substrate. The resistor layer may have a major structure that is amorphous.