公开(公告)号：US20170194222A1

公开(公告)日：2017-07-06

申请号：US15209303

申请日：2016-07-13

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Ying LIU ,  Hongwei TIAN ,  Tuo SUN

IPC: H01L21/66 ,  G02F1/1368 ,  H01L27/12

CPC classification number: H01L22/34 ,  G02F1/1362 ,  G02F1/1368 ,  G02F2001/136254 ,  H01L27/124

Abstract: The present disclosure provides a test element group, an array substrate, a test device and a test method. The test element group includes an array of Thin Film Transistors (TFTs), in which first electrodes of the TFTs in each row are connected to a first connection end, second electrodes of the TFTs in each column are connected to a second connection end, and third electrodes of all of the TFTs in the array are connected to an identical third connection end. The first electrode, the second electrode and the third electrode correspond to the source electrode, the drain source and the gate source of the TFT.

公开(公告)号：US20150280008A1

公开(公告)日：2015-10-01

申请号：US14445549

申请日：2014-07-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Tuo SUN

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/78645 ,  H01L29/42384 ,  H01L29/78696

Abstract: The present invention discloses a multi-gate thin film transistor for realizing a multi-gate occupying a small area, pixels provided with the multi-gate TFTs are high in aperture ratio, and a display device provided with the multi-gate TFTs is high in resolution. The multi-gate thin film transistor comprises: at least three gate electrodes; a plurality of active layers corresponding to each of the gate electrodes, respectively, the active layers being formed into an integrated structure; a source electrode connected with one of the plurality of active layers; and a plurality of drain electrodes connected with each of the remainder of the plurality of active layers, respectively. The present invention further discloses an array substrate comprising the multi-gate thin film transistor, and a display device.

Abstract translation: 本发明公开了一种用于实现占用小面积的多栅极的多栅极薄膜晶体管，设置有多栅极TFT的像素的开口率高，并且具有多栅极TFT的显示装置高 解析度。 多栅极薄膜晶体管包括：至少三个栅电极; 分别对应于每个栅电极的多个有源层，所述有源层被形成为一体结构; 与所述多个有源层中的一个连接的源电极; 以及分别与多个有源层的其余部分中的每一个连接的多个漏电极。 本发明还公开了一种包括多栅极薄膜晶体管的阵列基板和显示装置。