公开(公告)号：US20050070212A1

公开(公告)日：2005-03-31

申请号：US10676388

申请日：2003-09-30

申请人： Xuyen Pham ,  Ren Zhou ,  Wen-Chiang Tu

发明人： Xuyen Pham ,  Ren Zhou ,  Wen-Chiang Tu

IPC分类号： B24B37/04 ,  B24B57/02 ,  B24B1/00

CPC分类号： B24B37/04 ,  B24B57/02

摘要： A system and method of delivering a liquid to a CMP polishing pad includes supplying the liquid to a nozzle, the nozzle being oriented toward a polishing surface of the CMP polishing pad. The liquid flows at a rate of less than or equal to about 100 cc per minute. A pressurized carrier gas is also supplied to the nozzle. The liquid is substantially evenly sprayed from the nozzle onto the CMP polishing pad.

摘要翻译： 将液体输送到CMP抛光垫的系统和方法包括将液体供应到喷嘴，喷嘴朝向CMP抛光垫的抛光表面。 液体以小于或等于约100cc /分钟的速率流动。 加压的载气也被供应到喷嘴。 液体基本均匀地从喷嘴喷射到CMP抛光垫上。

公开(公告)号：US6153530A

公开(公告)日：2000-11-28

申请号：US270286

申请日：1999-03-16

申请人： Yan Ye ,  Xiaoye Zhao ,  Chang-Lin Hsieh ,  Xian-Can Deng ,  Wen-Chiang Tu ,  Chung-Fu Chu ,  Diana Xiaobing Ma

发明人： Yan Ye ,  Xiaoye Zhao ,  Chang-Lin Hsieh ,  Xian-Can Deng ,  Wen-Chiang Tu ,  Chung-Fu Chu ,  Diana Xiaobing Ma

IPC分类号： H01L21/302 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/3205 ,  H01L21/3213 ,  H01L23/52 ,  H01L21/00

CPC分类号： H01L21/02071

摘要： Disclosed herein is a post-etch treatment for plasma etched metal-comprising features in semiconductor devices. The post-etch treatment significantly reduces or eliminates surface corrosion of the etched metal-comprising feature. It is particularly important to prevent the formation of moisture on the surface of the feature surface prior to an affirmative treatment to remove corrosion-causing contaminants from the feature surface. Avoidance of moisture formation is assisted by use of a high vacuum; use of an inert, moisture-free purge gas; and by maintaining the substrate at a sufficiently high temperature to volatilize moisture. The affirmative post-etch treatment utilizes a plasma to expose the etched metal-comprising feature to sufficient hydrogen which is in a kinetic state permitting reaction with residual halogen-comprising residues on the etched surface, while maintaining the etched feature surface at a temperature which supports volatilization of the byproducts of a reaction between the active hydrogen species and the halogen-comprising residues. For an etched copper surface, if moisture forms on the etched surface prior to an affirmative treatment to remove corrosion-causing contaminants, it is very important to avoid contact of the etched surface with pollutants which are capable of forming copper carbonates and/or copper sulfates.

摘要翻译： 本文公开了用于半导体器件中等离子体蚀刻金属的特征的后蚀刻处理。 蚀刻后处理显着地减少或消除了蚀刻的金属包含特征的表面腐蚀。 特别重要的是在肯定处理之前防止在特征表面的表面上形成湿气以从特征表面除去腐蚀性污染物。 通过使用高真空来辅助避免水分形成; 使用惰性，无湿气的吹扫气体; 并且通过将基底保持在足够高的温度以使水分挥发。 肯定的后蚀刻处理利用等离子体将含蚀刻金属的特征暴露于足够的氢气，该氢气处于动态状态，允许与蚀刻表面上的残留的含卤素残留物反应，同时将蚀刻的特征表面保持在支持 活性氢物质与含卤素残基之间的反应的副产物挥发。 对于蚀刻的铜表面，如果在进行肯定处理以除去腐蚀性污染物之前在蚀刻表面上形成水分，则避免蚀刻表面与能够形成碳酸铜和/或硫酸铜的污染物接触是非常重要的 。