公开(公告)号：US09627248B2

公开(公告)日：2017-04-18

申请号：US15110802

申请日：2015-02-05

申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： Jun Saito ,  Kimimori Hamada ,  Akitaka Soeno ,  Hidefumi Takaya ,  Sachiko Aoi ,  Toshimasa Yamamoto

IPC分类号： H01L29/66 ,  H01L21/762 ,  H01L29/06 ,  H01L29/16 ,  H01L29/423 ,  H01L21/761

CPC分类号： H01L21/76229 ,  H01L21/761 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0696 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/7811 ,  H01L29/7813

摘要： An insulating gate type semiconductor device being capable of easily depleting an outer periphery region is provided. The insulating gate type semiconductor device includes: first to fourth outer periphery trenches formed in a front surface of a semiconductor substrate; insulating layers located in the outer periphery trenches; fifth semiconductor regions being of a second conductive type and formed in ranges exposed to bottom surfaces of the outer periphery trenches; and a connection region connecting the fifth semiconductor region exposed to the bottom surface of the second outer periphery trench to the fifth semiconductor region exposed to the bottom surface of the third outer periphery trench. A clearance between the second and third outer periphery trenches is wider than each of a clearance between the first and second outer periphery trenches and a clearance between the third and fourth outer periphery trenches.