Test circuit in clock synchronous semiconductor memory device
    52.
    发明授权
    Test circuit in clock synchronous semiconductor memory device 无效
    时钟同步半导体存储器件中的测试电路

    公开(公告)号:US5511029A

    公开(公告)日:1996-04-23

    申请号:US246582

    申请日:1994-05-19

    CPC分类号: G11C29/40 G11C29/26

    摘要: In order to reduce a test time for a synchronous type memory device, a compression circuit compresses a plurality of memory cell data which are inputted in a plurality of read registers provided for a data output terminal to 1-bit data. A bank selection circuit selects an output of the compression circuit of either a bank #A or a bank #B. A tristate inverter buffer passes the 1-bit compression data selected by the bank selection circuit in accordance with a test mode command signal. The data output terminal outputs compressed data of a plurality of bits of memory cells. Thus, it is possible to simultaneously determine pass/fail of a plurality of memory cells, thereby reducing the test time.

    摘要翻译: 为了减少同步型存储器件的测试时间,压缩电路将输入到数据输出端子的多个读寄存器中输入的多个存储单元数据压缩为1位数据。 存储体选择电路选择存储体#A或存储体#B的压缩电路的输出。 三态反相缓冲器根据测试模式命令信号传递由存储体选择电路选择的1位压缩数据。 数据输出端输出多个位的存储单元的压缩数据。 因此,可以同时确定多个存储单元的通过/失败,从而减少测试时间。