HIGH THROUGHPUT CMP PLATFORM
    51.
    发明申请
    HIGH THROUGHPUT CMP PLATFORM 审中-公开
    高通量CMP平台

    公开(公告)号:US20140220863A1

    公开(公告)日:2014-08-07

    申请号:US13758378

    申请日:2013-02-04

    CPC classification number: B24B37/005

    Abstract: A chemical-mechanical polishing system has a first polishing apparatus configured to perform a first chemical-mechanical polish on a workpiece and a second polishing apparatus configured to perform a second chemical-mechanical polish on the workpiece. A rework polishing apparatus comprising a rework platen and a rework CMP head is configured to perform an auxiliary chemical-mechanical polish on the workpiece when the workpiece is positioned on the rework platen. A measurement apparatus measures one or more parameters of the workpiece, and a transport apparatus transports the workpiece between the first polishing apparatus, second polishing apparatus, rework polishing apparatus, and measurement apparatus. A controller determines a selective transport of the workpiece to the rework polishing apparatus by the transport apparatus only when the one or more parameters are unsatisfactory.

    Abstract translation: 化学机械抛光系统具有被配置为在工件上执行第一化学机械抛光的第一抛光装置和被配置为在工件上执行第二化学机械抛光的第二抛光装置。 包括返工板和返工CMP头的返工抛光装置构造成当工件位于返工台板上时在工件上执行辅助化学 - 机械抛光。 测量装置测量工件的一个或多个参数,并且输送装置在第一抛光装置,第二抛光装置,返工抛光装置和测量装置之间输送工件。 只有当一个或多个参数不令人满意时,控制器确定由输送装置选择性地将工件输送到返工抛光装置。

    In-Situ Charging Neutralization
    52.
    发明申请
    In-Situ Charging Neutralization 有权
    原位充电中和

    公开(公告)号:US20140210506A1

    公开(公告)日:2014-07-31

    申请号:US13753627

    申请日:2013-01-30

    CPC classification number: H01J37/32073 H01J37/32935 H01L22/14 H01L22/20

    Abstract: Some embodiments relate to a method for semiconductor processing. In this method, a semiconductor wafer is provided. A surface region of the semiconductor wafer is probed to determine whether excess charge is present on the surface region. Based on whether excess charge is present, selectively inducing a corona discharge to reduce the excess charge. Other techniques are also provided.

    Abstract translation: 一些实施例涉及用于半导体处理的方法。 在该方法中,设置半导体晶片。 探测半导体晶片的表面区域以确定表面区域上是否存在过量电荷。 基于是否存在过量电荷,选择性地引起电晕放电以减少过量电荷。 还提供其他技术。

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