公开(公告)号：US5863659A

公开(公告)日：1999-01-26

申请号：US826440

申请日：1997-03-24

申请人： Norihiro Kobayashi ,  Katsunori Koarai

发明人： Norihiro Kobayashi ,  Katsunori Koarai

IPC分类号： H01L21/322 ,  H01L21/304 ,  H01L29/04 ,  B32B9/04

CPC分类号： H01L21/304 ,  H01L29/045 ,  Y10T428/12528 ,  Y10T428/12674

摘要： A silicon wafer has a polycrystalline silicon film formed on one main surface. The polycrystalline silicon film has a multilayer structure composed of X layers (X is an integer equal to or greater than two) containing oriented components in different proportions. The proportion of the oriented component in the first polycrystalline silicon layer in contact with the silicon wafer is larger than the respective proportions of the oriented components in the second to X-th polycrystalline silicon layers superposed on the first polycrystalline silicon layer. It becomes possible to provide a silicon wafer whose polycrystalline silicon film possesses high gettering capability and in which stress acting on the silicon wafer is decreased.

摘要翻译： 硅晶片具有形成在一个主表面上的多晶硅膜。 多晶硅膜具有由不同比例含有<220>取向成分的X层（X为2以上的整数）构成的多层结构体。 与硅晶片接触的第一多晶硅层中的<220>取向成分的比例大于叠置在第一多晶硅上的第二至第X多晶硅层中的<220>取向成分的比例 层。 可以提供一种硅晶片，其多晶硅膜具有高吸杂能力，并且其中作用在硅晶片上的应力降低。