公开(公告)号：US20090073540A1

公开(公告)日：2009-03-19

申请号：US12207270

申请日：2008-09-09

申请人： Manish Kothari ,  Gaurav Sethi ,  Jonathan Charles Griffiths ,  Kasra Khazeni

发明人： Manish Kothari ,  Gaurav Sethi ,  Jonathan Charles Griffiths ,  Kasra Khazeni

IPC分类号： G02B26/00

CPC分类号： G02B26/001 ,  G02B5/286

摘要： In certain embodiments, a device is provided that utilizes both interferometrically reflected light and transmitted light. Light incident on the device is interferometrically reflected from a plurality of layers of the device to emit light in a first direction, the interferometrically reflected light having a first color. Light from a light source is transmitted through the plurality of layers of the device to emit from the device in the first direction, the transmitted light having a second color.

摘要翻译： 在某些实施例中，提供利用干涉反射光和透射光两者的装置。 入射到设备上的光被从设备的多个层被干涉地反射，以沿第一方向发光，该干涉反射光具有第一颜色。 来自光源的光通过装置的多个层透射从第一方向从装置发射，透射光具有第二颜色。

公开(公告)号：US06423384B1

公开(公告)日：2002-07-23

申请号：US09339888

申请日：1999-06-25

申请人： Kasra Khazeni ,  Eugene Tzou ,  Zhengquan Tan

发明人： Kasra Khazeni ,  Eugene Tzou ,  Zhengquan Tan

IPC分类号： H05H124

CPC分类号： H01L21/3146 ,  C23C16/26 ,  H01L21/0276 ,  H01L21/0332

摘要： The present invention generally provides a method for depositing a low dielectric constant amorphous carbon film on a substrate or other workpiece using high density plasma chemical vapor deposition (HDP-CVD) techniques. Specifically, the present invention provides a method for forming an amorphous carbon film having a low dielectric constant of less than about 3.0 and a high thermal stability at a temperature of at least about 400° C. In a preferred embodiment, the film is deposited using methane (CH4) and argon in a HDP-CVD reactor. The amorphous carbon film formed according to the invention is useful for many applications in ultra large scale integration (ULSI) structures and devices, such as for example, an inter-metal dielectric material and an anti-reflective coating useful for patterning sub-micron interconnect features.

摘要翻译： 本发明通常提供了使用高密度等离子体化学气相沉积（HDP-CVD）技术在衬底或其它工件上沉积低介电常数非晶碳膜的方法。 具体地说，本发明提供一种形成低介电常数小于约3.0的非晶碳膜和在至少约400℃的温度下的高热稳定性的方法。在优选实施例中，使用 甲烷（CH4）和氩气。 根据本发明形成的无定形碳膜可用于超大规模集成（ULSI）结构和器件中的许多应用，例如金属间电介质材料和用于构图亚微米互连的抗反射涂层 特征。