公开(公告)号：US06835425B2

公开(公告)日：2004-12-28

申请号：US10181827

申请日：2002-07-22

Applicant: Kazuhiro Fukuda ,  Yoshikazu Kondo ,  Takashi Murakami ,  Shunichi Iwamaru ,  Yumi Muramatsu ,  Toshio Tsuji

Inventor： Kazuhiro Fukuda ,  Yoshikazu Kondo ,  Takashi Murakami ,  Shunichi Iwamaru ,  Yumi Muramatsu ,  Toshio Tsuji

IPC: H05H124

CPC classification number: G02B1/11 ,  C23C4/10 ,  C23C4/18 ,  C23C16/402 ,  C23C16/405 ,  C23C16/509 ,  C23C16/5093 ,  C23C16/545 ,  G02B1/10 ,  G02B1/115 ,  G02B1/14 ,  G02B1/16 ,  G02B1/18 ,  H01J37/32532

Abstract: A layer forming method is disclosed which comprises the steps of supplying power of not less than 1 W/cm2 at a high frequency voltage exceeding 100 kHz across a gap between a first electrode and a second electrode opposed to each other at atmospheric pressure or at approximately atmospheric pressure to induce a discharge, generating a reactive gas in a plasma state by the charge, and exposing a substrate to the reactive gas in a plasma state to form a layer on the substrate.

公开(公告)号：US06827987B2

公开(公告)日：2004-12-07

申请号：US09927698

申请日：2001-07-27

Applicant: Tae Kyung Won ,  Soo Young Choi ,  Takako Takehara ,  William R. Harshbarger

Inventor： Tae Kyung Won ,  Soo Young Choi ,  Takako Takehara ,  William R. Harshbarger

IPC: H05H124

CPC classification number: C23C16/4581

Abstract: Provided herein is a method of reducing an electrostatic charge on a substrate during a plasma enhanced chemical vapor deposition process, comprising the step of depositing a conductive layer onto a top surface of a susceptor support plate disposed within a deposition chamber wherein the conductive layer dissipates the electrostatic charge on the bottom surface of the substrate during a plasma enhanced chemical vapor deposition process. Also provided are a method of depositing a thin film during a plasma enhanced chemical vapor deposition process using the methods disclosed herein and a conductive susceptor.

Abstract translation: 本文提供的是一种在等离子体增强化学气相沉积工艺期间减少衬底上的静电电荷的方法，其包括将导电层沉积到设置在沉积室内的基座支撑板的顶表面上的步骤，其中导电层消散 在等离子体增强化学气相沉积工艺期间，在衬底的底表面上的静电荷。 还提供了使用本文公开的方法和导电基座在等离子体增强化学气相沉积工艺期间沉积薄膜的方法。

公开(公告)号：US06793981B2

公开(公告)日：2004-09-21

申请号：US10135277

申请日：2002-04-30

Applicant: Tatsuji Nakajima

Inventor： Tatsuji Nakajima

IPC: H05H124

CPC classification number: G02B1/111 ,  C23C16/545

Abstract: The major object of the present invention is to provide a method for producing a laminated film, wherein a titanium oxide film can be formed at a temperature at which a polymeric film is not decomposed, elongated or deformed, while the laminated film of a titanium oxide film or of a titanium oxide film and a silica film, having optical performance usable as an anti-reflective film can be formed at a high rate, as well as an anti-reflective film produced by the method. To solve this major object, a laminated film of a titanium oxide film or of a titanium oxide film and a silica film is formed by plasma CVD method in the present invention.

Abstract translation: 本发明的主要目的是提供一种层叠膜的制造方法，其中，可以在聚合物膜不分解，拉长或变形的温度下形成氧化钛膜，同时将二氧化钛 可以以高速率形成具有可用作抗反射膜的光学性能的氧化钛膜，二氧化钛膜和二氧化硅膜，以及通过该方法制造的抗反射膜。 为了解决这个主要问题，本发明中通过等离子体CVD方法形成氧化钛膜或氧化钛膜和二氧化硅膜的叠层膜。

公开(公告)号：US06703081B2

公开(公告)日：2004-03-09

申请号：US10045855

申请日：2002-01-11

Applicant: Johann Karner ,  Mauro Pedrazzini

Inventor： Johann Karner ,  Mauro Pedrazzini

IPC: H05H124

CPC classification number: C23C16/513

Abstract: Vacuum treatment installation with a vacuum treatment chamber containing a plasma discharge configuration as well as a gas supply configuration. The plasma discharge configuration has at least two plasma beam discharge configurations with substantially parallel discharge axes and a deposition configuration is positioned along a surface which extends at predetermined distances from the beam axes and along a substantial section of the longitudinal extent of the discharge beam.

Abstract translation: 具有包含等离子体放电构造的真空处理室的真空处理装置以及气体供给构造。 等离子体放电配置具有至少两个具有基本上平行的放电轴的等离子体束放电结构，并且沉积构型沿着沿着放射束的纵向延伸的预定距离延伸的表面定位。

公开(公告)号：US06692794B2

公开(公告)日：2004-02-17

申请号：US10217113

申请日：2002-08-12

Applicant: Masatoshi Nakamura ,  Yoshinori Hatanaka

Inventor： Masatoshi Nakamura ,  Yoshinori Hatanaka

IPC: H05H124

CPC classification number: C23C16/509 ,  B32B15/04 ,  C03C17/256 ,  C03C2217/212 ,  C03C2218/113 ,  C23C16/405 ,  C23C16/452 ,  Y10T428/31504 ,  Y10T428/31725

Abstract: This invention provides a composite having a hydrophilic film made of amorphous titanium oxide. A film is deposited on a substrate made of, for example, glass or synthetic resin. The film is composed of amorphous titanium oxide partially having structures in which a network of Ti—O—Ti bond is broken to give Ti—OH bond terminals.

Abstract translation: 本发明提供一种具有由无定形氧化钛制成的亲水膜的复合体。 将膜沉积在由例如玻璃或合成树脂制成的基板上。 该膜由部分具有Ti-O-Ti键网络断裂以得到Ti-OH键末端的结构的无定形氧化钛组成。

公开(公告)号：US06649223B2

公开(公告)日：2003-11-18

申请号：US10203763

申请日：2002-08-13

Applicant: Pascal Colpo ,  François Rossi

Inventor： Pascal Colpo ,  François Rossi

IPC: H05H124

CPC classification number: H01J37/321

Abstract: The apparatus for plasma treatment of a non-conductive hollow substrate (5), comprises a plasma chamber (12) provided with two oppositely facing field admission windows (8, 9), and first and second opposite coil arrangements (20, 30) located on an outer surface (8a; 9a) of the first and second windows respectively. The first and second coil arrangements being connected to power supply means (4) such that a current (I) of a same direction flows simultaneously in the first and second coil arrangements. The two coil arrangements (20, 30) induce through the substrate a magnetic flux (7) transversal and perpendicular to a substrate depth (L) for generating an electrical field in the substrate plan.

Abstract translation: 用于等离子体处理非导电性中空基板（5）的装置包括设置有两个相对面对的入射窗（8,9）的等离子体室（12），以及位于第一和第二相对的线圈装置（20,30） 分别在第一和第二窗口的外表面（8a; 9a）上。 第一和第二线圈装置连接到电源装置（4），使得相同方向的电流（I）在第一和第二线圈装置中同时流动。 两个线圈装置（20,30）通过衬底诱导横向和垂直于衬底深度（L）的磁通（7），用于在衬底平面图中产生电场。

公开(公告)号：US06423383B1

公开(公告)日：2002-07-23

申请号：US09196141

申请日：1998-11-20

Applicant: Naoki Hirose ,  Takashi Inujima ,  Toru Takayama

Inventor： Naoki Hirose ,  Takashi Inujima ,  Toru Takayama

IPC: H05H124

CPC classification number: H01J37/32192 ,  C23C16/511 ,  H01J37/32623 ,  H01J37/32678 ,  Y10S427/104

Abstract: A plasma processing apparatus and method is equipped with a reaction chamber, a microwave generator for generating a microwave within the reaction chamber, and main and auxiliary magnets for producing a magnetic filed parallel with microwave propagation direction. The auxiliary magnet is located along the wall of the reaction chamber so as to strengthen the magnetic filed at the periphery of the reaction chamber. A reactive gas containing a carbon compound gas is introduced into the chamber wherein the reactive gas is converted into a plasma by a resonance using the microwaves and the magnetic field. The presence of the auxiliary magnet produces a centrifugal drifting force within the reaction chamber, thereby confining the plasma gas to the center of the chamber. A substrate is then placed within the chamber and a film comprising amorphous carbon is deposited thereon.

Abstract translation: 等离子体处理装置和方法配备有反应室，用于在反应室内产生微波的微波发生器，以及用于产生与微波传播方向平行的磁场的主磁辅助磁铁。 辅助磁体位于反应室的壁上，以加强反应室周围的磁场。 将含有碳化合物气体的反应性气体引入室中，其中通过使用微波和磁场的共振将反应气体转化为等离子体。 辅助磁体的存在在反应室内产生离心漂移力，从而将等离子体气体限制在室的中心。 然后将衬底放置在室内，并且其上沉积包含无定形碳的膜。

公开(公告)号：US06410106B1

公开(公告)日：2002-06-25

申请号：US09759570

申请日：2001-01-11

Applicant: Cheng-Yuan Tsai ,  Chih-Chien Liu ,  Ming-Sheng Yang

Inventor： Cheng-Yuan Tsai ,  Chih-Chien Liu ,  Ming-Sheng Yang

IPC: H05H124

Abstract: A method is used to form an intermetal dielectric layer. According to the invention, an unbiased-unclamped fluorinated silicate glass layer used as a protection layer is formed by high density plasma chemical vapor deposition on a biased-clamped fluorinated silicate glass layer formed by high density plasma chemical vapor deposition to prevent the biased-clamped fluorinated silicate glass layer from being exposed in a planarization process.

公开(公告)号：US06294227B1

公开(公告)日：2001-09-25

申请号：US09589879

申请日：2000-06-09

Applicant: Hidetaka Anma ,  Yoshinori Hatanaka

Inventor： Hidetaka Anma ,  Yoshinori Hatanaka

IPC: H05H124

CPC classification number: H01J37/32009 ,  C23C16/30 ,  C23C16/402 ,  H01J37/32082 ,  H01J37/32541

Abstract: A method of forming a uniform-thickness good-quality protective film with scratch-proofness and ultraviolet cutting characteristic on a plastic part having a diversified and complex three-dimensional shape without wasteful release of an organic solvent, or the like, into the atmosphere. In a plasma chemical vapor deposition apparatus, the shape of at least one part of a surface of a cathode provided in a reaction chamber is made coincident with the shape of a surface of a plastic part such as a car headlamp lens, or the like. The plastic part is attached to the cathode in the condition that the two surfaces coincident in shape come into contact with each other. High-frequency electric power is supplied between the cathode and the reaction chamber while a hydrogen gas and hexamethyldisilane (HMDS) as a raw material gas for forming a protective film are imported into the reaction chamber. Thus, a protective film is formed on the surface of the plastic part by vapor deposition.

Abstract translation: 在具有多样化且复杂的三维形状的塑料部件上形成均匀厚度的优质保护膜，具有耐划伤性和紫外线切割特性的方法，而无需有机溶剂等的浪费地释放到大气中。 在等离子体化学气相沉积装置中，设置在反应室中的阴极的表面的至少一部分的形状与诸如汽车前照灯透镜等塑料部件的表面的形状一致。 在两个表面重合的表面彼此接触的情况下，塑料部分连接到阴极。 在作为保护膜形成原料气体的氢气和六甲基二硅烷（HMDS）进入反应室的同时，在阴极和反应室之间供给高频电力。 因此，通过气相沉积在塑料部件的表面上形成保护膜。

公开(公告)号：US06291030B1

公开(公告)日：2001-09-18

申请号：US09468720

申请日：1999-12-21

Applicant: Chung-Pei Chao ,  Cheng-Che Lee

Inventor： Chung-Pei Chao ,  Cheng-Che Lee

IPC: H05H124

CPC classification number: H01L21/7682 ,  H01L21/31612

Abstract: A method for forming a metal interconnect having a plurality of metal lines and an interlayer dielectric is disclosed. The metal interconnect has a decreased capacitance between the metal lines of the metal interconnect. First, a metal interconnect is formed onto a substrate. A first HDPCVD oxide layer is formed over the metal interconnect. A second HDPCVD oxide layer is formed over the first HDPCVD oxide layer, the second HDPCVD oxide layer being formed such that air gaps are formed between the metal lines of the metal interconnect. Furthermore, a third HDPCVD oxide layer may be formed over the second HDPCVD oxide layer, the third HDPCVD oxide formed using a sputter to deposition ratio higher than that used to form the second HDPCVD oxide layer.

Abstract translation: 公开了一种用于形成具有多个金属线和层间电介质的金属互连的方法。 金属互连在金属互连的金属线之间具有减小的电容。 首先，在基板上形成金属配线。 第一HDPCVD氧化物层形成在金属互连上。 在第一HDPCVD氧化物层上形成第二HDPCVD氧化物层，形成第二HDPCVD氧化物层，使得在金属互连的金属线之间形成气隙。 此外，可以在第二HDPCVD氧化物层上形成第三HDPCVD氧化物层，使用高于用于形成第二HDPCVD氧化物层的溅射沉积比形成第三HDPCVD氧化物。