公开(公告)号：US20160361791A1

公开(公告)日：2016-12-15

申请号：US14737915

申请日：2015-06-12

Applicant: GLOBALFOUNDRIES INC.

Inventor： Laertis Economikos ,  Elliott P. Rill

IPC: B24B37/005 ,  B24B37/20

CPC classification number: B24B37/005 ,  B24B37/013 ,  B24B37/20 ,  B24B37/24 ,  B24B49/10

Abstract: Various particular embodiments include a method for controlling chemical mechanical polishing, including: polishing a semiconductor wafer in a chemical mechanical polishing (CMP) tool; measuring a resistance of a resistive pathway through the semiconductor wafer while the semiconductor wafer is undergoing polishing in the CMP tool; and terminating the polishing of the semiconductor wafer when the measured resistance reaches a target resistance.

Abstract translation: 各种具体实施方案包括用于控制化学机械抛光的方法，包括：在化学机械抛光（CMP）工具中抛光半导体晶片; 测量在半导体晶片在CMP工具中进行抛光时通过半导体晶片的电阻通路的电阻; 并且当所测量的电阻达到目标电阻时终止半导体晶片的抛光。