公开(公告)号：US20240274440A1

公开(公告)日：2024-08-15

申请号：US18631589

申请日：2024-04-10

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Te-Chien Hou ,  Yu-Ting Yen ,  Cheng-Yu Kuo ,  Chih Hung Chen ,  William Weilun Hong ,  Kei-Wei Chen

IPC分类号： H01L21/3105 ,  B24B37/04 ,  B24B37/20 ,  C02F1/469 ,  H01L21/02 ,  H01L29/66

CPC分类号： H01L21/31053 ,  B24B37/042 ,  B24B37/044 ,  B24B37/20 ,  H01L21/02065 ,  H01L21/31055 ,  H01L29/66545 ,  C02F1/4691

摘要： A chemical mechanical planarization (CMP) system including a capacitive deionization module (CDM) for removing ions from a solution and a method for using the same are disclosed. In an embodiment, an apparatus includes a planarization unit for planarizing a wafer; a cleaning unit for cleaning the wafer; a wafer transportation unit for transporting the wafer between the planarization unit and the cleaning unit; and a capacitive deionization module for removing ions from a solution used in at least one of the planarization unit or the cleaning unit.

公开(公告)号：US11999027B2

公开(公告)日：2024-06-04

申请号：US17818135

申请日：2022-08-08

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： James Jeng-Jyi Hwang ,  He Hui Peng ,  Jiann Lih Wu ,  Chi-Ming Yang

IPC分类号： H01L21/304 ,  B24B1/00 ,  B24B37/04 ,  B24B37/20 ,  B24B53/017 ,  B24B57/02 ,  H01L21/321 ,  H01L21/67

CPC分类号： B24B37/042 ,  B24B1/00 ,  B24B37/20 ,  B24B53/017 ,  B24B57/02 ,  H01L21/304 ,  H01L21/3212 ,  H01L21/67248

摘要： A method for polishing a semiconductor substrate includes the following operations. A semiconductor substrate is received. An abrasive slurry having a first temperature is dispensed to a polishing surface of a polishing pad. The semiconductor substrate is polished. The abrasive slurry have a second temperature is dispensed to the polishing surface of the polishing pad during the polishing of the semiconductor substrate. The second temperature is different from the first temperature.

公开(公告)号：US11980997B2

公开(公告)日：2024-05-14

申请号：US17371909

申请日：2021-07-09

申请人： OKAMOTO MACHINE TOOL WORKS, LTD.

发明人： Takahiko Mitsui ,  Eiichi Yamamoto

IPC分类号： B24B53/017 ,  B24B37/20

CPC分类号： B24B53/017 ,  B24B37/20

摘要： A dressing apparatus includes a dresser provided in a polishing apparatus for polishing a board-like work by relative movement between the work and a polishing pad while bringing the polishing pad into contact with the work, the dresser having a dressing surface that slides relative to a polishing surface of the polishing pad to dress the polishing pad; a dresser drive member that rotates the dresser; a high-pressure water generating device that supplies high-pressure water pressurized to 1 to 15 MPa; and a high-pressure water injection nozzle that injects the high-pressure water toward the dressing surface rotating.

公开(公告)号：US11964359B2

公开(公告)日：2024-04-23

申请号：US16661400

申请日：2019-10-23

申请人： Applied Materials, Inc.

发明人： Ashwin Chockalingham ,  Mahendra C. Orilall ,  Mayu Yamamura ,  Boyi Fu ,  Rajeev Bajaj ,  Daniel Redfield

IPC分类号： B33Y80/00 ,  B24B37/20 ,  B24B37/22 ,  B24B37/24 ,  B24B37/26 ,  B24D18/00 ,  H01L21/306

CPC分类号： B24B37/20 ,  B24B37/22 ,  B24B37/24 ,  B24B37/26 ,  B24D18/0045 ,  B33Y80/00 ,  H01L21/30625

摘要： Implementations described herein generally relate to polishing articles and methods of manufacturing polishing articles used in polishing processes and cleaning processes. More particularly, implementations disclosed herein relate to composite polishing articles having graded properties. In one implementation, a polishing article is provided. The polishing article comprises one or more exposed first regions formed from a first material and having a first zeta potential and one or more second exposed regions formed from a second material and having a second zeta potential, wherein the first zeta potential is different from the second zeta potential.

公开(公告)号：US11964357B2

公开(公告)日：2024-04-23

申请号：US17857289

申请日：2022-07-05

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Seungchul Han ,  Yonghee Lee ,  Taemin Earmme ,  Byoungho Kwon ,  Kuntack Lee

IPC分类号： B24B37/005 ,  B24B37/20

CPC分类号： B24B37/005 ,  B24B37/20

摘要： A conditioner of a chemical mechanical polishing (CMP) apparatus includes a disk to polish a polishing pad of the CMP apparatus, a driver to rotate the disk, a lifter to lift the driver, an arm to rotate the lifter, and a connector to connect the driver to the lifter, the driver being tiltable with respect to the lifter.

公开(公告)号：US20230381918A1

公开(公告)日：2023-11-30

申请号：US18446842

申请日：2023-08-09

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chun-Hsi Huang ,  Chia-Lin Hsueh ,  Huang-Chu Ko

IPC分类号： B24B49/00 ,  B24B37/005 ,  B24B37/04 ,  B24B49/12 ,  B24B49/10 ,  B24B37/20

CPC分类号： B24B49/006 ,  B24B37/005 ,  B24B37/042 ,  B24B49/12 ,  B24B49/003 ,  B24B49/10 ,  B24B37/20

摘要： The present disclosure describes an apparatus and a method to detect a polishing pad profile during a polish process and adjust the polishing process based on the detected profile. The apparatus can include a polishing pad configured to polishing a substrate, a substrate carrier configured to hold the substrate against the polishing pad, and a detection module configured to detect a profile of the polishing pad. The detection module can include a probe configured to measure a thickness of one or more areas on the polishing pad, and a beam configured to support the probe, where the probe can be further configured to move along the beam.

公开(公告)号：US11826873B2

公开(公告)日：2023-11-28

申请号：US17000675

申请日：2020-08-24

申请人： Applied Materials, Inc.

发明人： Vijayabhaskara Venkatagiriyappa ,  Nitin Bhargav ,  Tae Kwang Lee

IPC分类号： B24B37/04 ,  C23C16/458 ,  B24B37/20

CPC分类号： B24B37/042 ,  B24B37/20 ,  C23C16/4583

摘要： Apparatus and method for removing material from the susceptor of a batch processing chamber are described. The apparatus comprises a polishing tool including a rotatable platen positioned above the susceptor. A method comprises contacting material deposited on the susceptor with the rotatable platen to remove the material from the susceptor.

公开(公告)号：US20230364731A1

公开(公告)日：2023-11-16

申请号：US18360885

申请日：2023-07-28

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Wen-Pin HO ,  Ren-Hao JHENG ,  S.P. CHENG

IPC分类号： B24B37/04 ,  B24B37/20

CPC分类号： B24B37/042 ,  B24B37/20

摘要： A chemical mechanical polishing (CMP) apparatus includes a polishing pad located on a top surface of a platen configured to rotate around a vertical axis passing through the platen, a wafer carrier configured to hold a substrate on a bottom surface thereof and to press the substrate on a top surface of the polishing pad, a slurry dispenser configured to dispense slurry over the top surface of the polishing pad, and a pad conditioning unit comprising a pad conditioning disk and a conditioning head configured to hold the pad conditioning disk. The conditioning head includes an electromagnet and the pad conditioning disk comprises a first ferromagnetic material portion configured to be attracted to the electromagnet when the electromagnet is energized.

公开(公告)号：US11813712B2

公开(公告)日：2023-11-14

申请号：US17036623

申请日：2020-09-29

申请人： Applied Materials, Inc.

发明人： Aniruddh Jagdish Khanna ,  Jason G. Fung ,  Puneet Narendra Jawali ,  Rajeev Bajaj ,  Adam Wade Manzonie ,  Nandan Baradanahalli Kenchappa ,  Veera Raghava Reddy Kakireddy ,  Joonho An ,  Jaeseok Kim ,  Mayu Yamamura

IPC分类号： B24B37/02 ,  B24B37/04 ,  B24B37/20

CPC分类号： B24B37/20 ,  B24B37/042

摘要： Polishing pads having discrete and selectively arranged regions of varying porosity within a continuous phase of polymer material are provided herein. In one embodiment a polishing pad features a plurality of polishing elements each comprising a polishing surface and sidewalls extending downwardly from the polishing surface to define a plurality of channels disposed between the polishing elements, wherein one or more of the polishing elements is formed of a continuous phase of polymer material having one or more first regions comprising a first porosity and a second region comprising a second porosity, wherein the second porosity is less than the first porosity.

公开(公告)号：US20230330804A1

公开(公告)日：2023-10-19

申请号：US18012711

申请日：2021-05-24

申请人： SHIN-ETSU HANDOTAI CO., LTD.

发明人： Junichi UENO ,  Kaoru ISHII

IPC分类号： B24B37/20

CPC分类号： B24B37/20

摘要： A single-side polishing apparatus including: a base turntable having a groove for vacuum suction; a detachable polishing turntable immobilized by vacuum suction; a polishing pad; and a polishing head configured to hold a wafer. The single-side polishing apparatus brings a surface of a wafer held by the polishing head into sliding contact with the polishing pad for polishing. The polishing pad includes a polishing layer configured to polish the wafer surface, a first adhesive layer, a PET sheet layer, a second adhesive layer, an elastic layer, and a third adhesive layer for attachment to the polishing turntable. The layers are sequentially stacked. The polishing pad has a compressibility of 16% or more.