公开(公告)号：US09209065B1

公开(公告)日：2015-12-08

申请号：US14483907

申请日：2014-09-11

Applicant: International Business Machines Corporation

Inventor： Kangguo Cheng ,  Bruce B. Doris ,  Ali Khakifirooz ,  Darsen D. Lu ,  Alexander Reznicek

IPC: H01L21/331 ,  H01L21/762 ,  H01L21/02

CPC classification number: H01L21/762 ,  H01L21/02002 ,  H01L21/0228 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/2007 ,  H01L21/823807 ,  H01L21/84 ,  H01L27/092 ,  H01L27/1203

Abstract: A strained silicon material layer is bonded to a relaxed silicon material layer. The strained silicon material and any defect containing region formed during bonding are completely removed from a second device region, while a portion of the strained silicon material layer remains in a first device region. A relaxed silicon material portion is epitaxially formed on an exposed portion of the relaxed silicon material layer. A high performance nFET device, in which leakage is not a main concern, can be formed on the remaining portion of the strained silicon material layer in the first device region, and a pFET device or a low leakage nFET device can be formed on the epitaxially formed relaxed silicon material portion.

Abstract translation: 应变硅材料层与松散的硅材料层接合。 应变硅材料和在接合期间形成的任何缺陷包含区域从第二器件区域完全去除，而一部分应变硅材料层保留在第一器件区域中。 松弛的硅材料部分外延地形成在松弛的硅材料层的暴露部分上。 可以在第一器件区域中的应变硅材料层的剩余部分上形成其中不是主要关注的高性能nFET器件，并且可以在外延上形成pFET器件或低泄漏nFET器件 形成松弛的硅材料部分。