公开(公告)号：US20090225395A1

公开(公告)日：2009-09-10

申请号：US12368915

申请日：2009-02-10

申请人： Surya Ganti ,  Kasra Khazeni ,  Jeff Sampsell

发明人： Surya Ganti ,  Kasra Khazeni ,  Jeff Sampsell

IPC分类号： G02B26/08

CPC分类号： G02B26/001

摘要： A transmissive micromechanical device includes a substrate, an optical stack over the substrate and a moveable membrane over the optical stack. The moveable membrane may include a partially reflective mirror and be configured to move from a first position to a second position. When the movable membrane is in the first position the transmissive micromechanical device is configured to pass light of a predetermined color and when the movable membrane is in the second position, the micromechanical device is configured to block substantially all of light incident on the substrate.

摘要翻译： 透射微机械装置包括衬底，衬底上的光学堆叠和光学堆叠上的可移动膜。 可移动膜可以包括部分反射镜并且被构造成从第一位置移动到第二位置。 当可移动膜处于第一位置时，透射微机械装置被配置为通过预定颜色的光，并且当可移动膜处于第二位置时，微机械装置构造成基本上阻挡入射在基板上的所有光。

公开(公告)号：US06423384B1

公开(公告)日：2002-07-23

申请号：US09339888

申请日：1999-06-25

申请人： Kasra Khazeni ,  Eugene Tzou ,  Zhengquan Tan

发明人： Kasra Khazeni ,  Eugene Tzou ,  Zhengquan Tan

IPC分类号： H05H124

CPC分类号： H01L21/3146 ,  C23C16/26 ,  H01L21/0276 ,  H01L21/0332

摘要： The present invention generally provides a method for depositing a low dielectric constant amorphous carbon film on a substrate or other workpiece using high density plasma chemical vapor deposition (HDP-CVD) techniques. Specifically, the present invention provides a method for forming an amorphous carbon film having a low dielectric constant of less than about 3.0 and a high thermal stability at a temperature of at least about 400° C. In a preferred embodiment, the film is deposited using methane (CH4) and argon in a HDP-CVD reactor. The amorphous carbon film formed according to the invention is useful for many applications in ultra large scale integration (ULSI) structures and devices, such as for example, an inter-metal dielectric material and an anti-reflective coating useful for patterning sub-micron interconnect features.

摘要翻译： 本发明通常提供了使用高密度等离子体化学气相沉积（HDP-CVD）技术在衬底或其它工件上沉积低介电常数非晶碳膜的方法。 具体地说，本发明提供一种形成低介电常数小于约3.0的非晶碳膜和在至少约400℃的温度下的高热稳定性的方法。在优选实施例中，使用 甲烷（CH4）和氩气。 根据本发明形成的无定形碳膜可用于超大规模集成（ULSI）结构和器件中的许多应用，例如金属间电介质材料和用于构图亚微米互连的抗反射涂层 特征。