公开(公告)号：US5365102A

公开(公告)日：1994-11-15

申请号：US88204

申请日：1993-07-06

申请人： Manoj Mehrotra ,  Bantval J. Baliga

发明人： Manoj Mehrotra ,  Bantval J. Baliga

IPC分类号： H01L29/47 ,  H01L29/872 ,  H01L27/095 ,  H01L29/48

CPC分类号： H01L29/872 ,  H01L29/8725

摘要： A trench MOS Schottky barrier rectifier includes a semiconductor substrate having first and second faces, a cathode region of first conductivity type at the first face and a drift region of first conductivity type on the cathode region, extending to the second face. First and second trenches are formed in the drift region at the second face and define a mesa of first conductivity type therebetween. The mesa can be rectangular or circular in shape or of stripe geometry. Insulating regions are defined on the sidewalls of the trenches, adjacent the mesa, and an anode electrode is formed on the insulating regions, and on the top of the mesa at the second face. The anode electrode forms a Schottky rectifying contact with the mesa. The magnitude of reverse-biased leakage currents in the mesa and the susceptibility to reverse breakdown are limited not only by the potential barrier formed by the rectifying contact but also by the potential difference between the mesa and the portion of anode electrode extending along the insulating regions. Moreover, by properly choosing the width of the mesa, and by doping the mesa to a concentration greater than about 1.times.10.sup.16 per cubic centimeters, reverse blocking voltages greater than those of a corresponding parallel-plane P-N junction rectifier can be achieved.

摘要翻译： 沟槽MOS肖特基势垒整流器包括具有第一面和第二面的半导体衬底，在第一面处具有第一导电类型的阴极区域和在阴极区域上延伸到第二面的第一导电类型的漂移区域。 第一和第二沟槽形成在第二面的漂移区域中，并且在它们之间限定第一导电类型的台面。 台面可以是矩形或圆形的形状或条纹几何形状。 绝缘区域限定在与台面相邻的沟槽的侧壁上，并且阳极电极形成在绝缘区域上，并在第二面的台面顶部上形成。 阳极与台面形成肖特基整流接触。 台面中反向偏置的漏电流的大小和反向击穿的敏感性不仅受限于由整流接触形成的势垒，而且还受到沿着绝缘区域延伸的台面与阳极电极部分之间的电位差的限制 。 此外，通过适当选择台面的宽度，并且通过将台面掺杂到大于约1×1016 /立方厘米的浓度，可以实现大于对应的平行平面P-N结整流器的反向阻断电压。