公开(公告)号：US20240162040A1

公开(公告)日：2024-05-16

申请号：US18509043

申请日：2023-11-14

申请人： STMICROELECTRONICS S.r.l.

发明人： Edoardo ZANETTI ,  Simone RASCUNA' ,  Mario Giuseppe SAGGIO ,  Alfio GUARNERA ,  Leonardo FRAGAPANE ,  Cristina TRINGALI

IPC分类号： H01L21/04 ,  H01L21/285 ,  H01L29/06 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78 ,  H01L29/872

CPC分类号： H01L21/046 ,  H01L21/0495 ,  H01L21/28537 ,  H01L29/0619 ,  H01L29/0661 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/66143 ,  H01L29/66734 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/872 ,  H01L29/8725

摘要： A manufacturing method of an electronic device includes: forming a drift layer of an N type; forming a trench in the drift layer; forming an edge-termination structure alongside the trench by implanting dopant species of a P type; and forming a depression region between the trench and the edge-termination structure by digging the drift layer. The steps of forming the depression region and the trench are carried out at the same time. The step of forming the depression region comprises patterning the drift layer to form a structural connection with the edge-termination structure having a first slope, and the step of forming the trench comprises etching the drift layer to define side walls of the trench, which have a second slope steeper than the first slope.

公开(公告)号：US20240055536A1

公开(公告)日：2024-02-15

申请号：US18260520

申请日：2022-01-28

申请人： TDK Corporation

发明人： Jun ARIMA ,  Minoru FUJITA ,  Katsumi KAWASAKI ,  Jun HIRABAYASHI

IPC分类号： H01L29/872 ,  H01L29/24

CPC分类号： H01L29/8725 ,  H01L29/24

摘要： To prevent dielectric breakdown of a Schottky barrier diode using gallium oxide. A Schottky barrier diode has a drift layer provided on a semiconductor substrate, an anode electrode, and a cathode electrode. A part of the anode electrode is embedded in an outer peripheral trench and a center trench through an insulating film. The insulating film is formed such that the thickness thereof in the depth direction of the outer peripheral trench becomes larger toward the outside, whereby an outer peripheral wall S1 of the anode electrode embedded in the outer peripheral trench is curved so as to approach vertical toward the outside. This results in relaxation of an electric field which occurs at the outer peripheral bottom portion of the outer peripheral trench upon application of a backward voltage.

公开(公告)号：US20230420539A1

公开(公告)日：2023-12-28

申请号：US18340134

申请日：2023-06-23

申请人： The Government of the United States of America, as represented by the Secretary of the Navy

发明人： Joseph A. Spencer ,  Marko J. Tadjer ,  Alan G. Jacobs ,  Karl D. Hobart ,  Yuhao Zhang

IPC分类号： H01L29/66 ,  H01L29/872

CPC分类号： H01L29/66143 ,  H01L29/8725

摘要： A self-aligned lithography process for the fabrication of an electronic device having predefined areas of a second semiconductor material having a second conductivity type deposited into trenches formed in a first semiconductor material layer having a first conductivity type. A single lithography mask is used for etching trenches in the first semiconductor material, enabling cleaning of the trenches, and providing defined areas for the deposition of the second semiconductor material into the first semiconductor material. The presence of the areas of the second semiconductor material within the first semiconductor material creates a heterojunction beneath a metal for the formation of a first type of contact to the first semiconductor material and a second type of contact to the second type of material. By using a single mask for the etching, cleaning, and filling steps, misalignment issues plaguing devices having small (1-2 μm) feature sizes is eliminated.

公开(公告)号：US20230352601A1

公开(公告)日：2023-11-02

申请号：US17784864

申请日：2020-10-05

申请人： TDK Corporation

发明人： Minoru FUJITA ,  Jun ARIMA ,  Katsumi KAWASAKI ,  Jun HIRABAYASHI

IPC分类号： H01L29/872 ,  H01L29/40 ,  H01L29/24 ,  H01L29/06

CPC分类号： H01L29/8725 ,  H01L29/407 ,  H01L29/24 ,  H01L29/0623 ,  H01L29/66969

摘要： A Schottky barrier diode includes an anode electrode which is brought into Schottky contact with a drift layer, a cathode electrode which is brought into ohmic contact with a semiconductor substrate, an insulating film covering the inner wall of a trench formed in the drift layer, a metal film covering the inner wall of the trench through the insulating film and electrically connected to the anode electrode, and a field insulating layer. The field insulating layer includes a first part positioned between an upper surface of the drift layer and the anode electrode and a second part covering the inner wall of the trench through the metal film and insulating film. With this configuration, even when misalignment occurs between the trench and the field insulating layer, dielectric breakdown can be prevented.

公开(公告)号：US11677023B2

公开(公告)日：2023-06-13

申请号：US17307243

申请日：2021-05-04

申请人： Infineon Technologies Austria AG

发明人： Jens Peter Konrath ,  Georg Pfusterschmied ,  Gregor Pobegen ,  Ulrich Schmid ,  Fabian Triendl

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L29/16 ,  H01L29/872

CPC分类号： H01L29/7827 ,  H01L29/1608 ,  H01L29/66143 ,  H01L29/66666 ,  H01L29/872 ,  H01L29/8725

摘要： A semiconductor device and a method of manufacturing a semiconductor are provided. In an embodiment, a first trench is formed in a silicon carbide layer. A second trench is formed in the silicon carbide layer to define a mesa in the silicon carbide layer between the first trench and the second trench. A first doped semiconductor material is formed in the first trench and a second doped semiconductor material is formed in the second trench. A third doped semiconductor material is formed over the mesa to define a heterojunction at an interface between the third doped semiconductor material and the mesa.

公开(公告)号：US20230178663A1

公开(公告)日：2023-06-08

申请号：US17920221

申请日：2021-04-22

申请人： KYOCERA Corporation

发明人： Shingo KABUTOYA

IPC分类号： H01L29/872 ,  H01L29/66 ,  H01L29/40 ,  H01L29/47

CPC分类号： H01L29/8725 ,  H01L29/66143 ,  H01L29/401 ,  H01L29/47

摘要： A semiconductor device A1 includes: a semiconductor layer including a trench; an insulating film covering an inner surface of the trench; a conductor embedded in the trench covered with the insulating film; a silicide layer; and a metal layer. A Schottky junction is formed by the silicide layer and a region being part of a semiconductor layer surface and being adjacent to the trench. A region including an end face of the silicide layer and an upper end face of the insulating film is covered with the metal layer, with no gap between one part and another part of the metal layer on the region. The end face is located at elevations higher than the upper end face. The metal layer and the silicide layer contain the same kind of metallic element.

公开(公告)号：US10056502B2

公开(公告)日：2018-08-21

申请号：US15788023

申请日：2017-10-19

申请人： ROHM CO., LTD.

发明人： Masatoshi Aketa ,  Yuta Yokotsuji

IPC分类号： H01L29/872 ,  H01L23/535 ,  H01L29/06 ,  H01L29/66 ,  H01L29/16 ,  H01L29/36 ,  H01L29/20

CPC分类号： H01L29/872 ,  H01L23/535 ,  H01L29/06 ,  H01L29/0607 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0692 ,  H01L29/08 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/36 ,  H01L29/66143 ,  H01L29/861 ,  H01L29/8613 ,  H01L29/8725

摘要： The semiconductor device of the present invention includes a first conductivity type semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode formed to come into contact with a surface of the semiconductor layer, and has a threshold voltage Vth of 0.3 V to 0.7 V and a leakage current Jr of 1×10−9 A/cm2 to 1×10−4 A/cm2 in a rated voltage VR.

公开(公告)号：US09972725B2

公开(公告)日：2018-05-15

申请号：US15663520

申请日：2017-07-28

申请人： TOYODA GOSEI CO., LTD.

发明人： Kazuya Hasegawa ,  Tohru Oka ,  Nariaki Tanaka

IPC分类号： H01L29/66 ,  H01L29/872 ,  H01L29/06 ,  H01L27/08 ,  H01L23/528 ,  H01L21/027 ,  H01L21/8252 ,  H01L29/20 ,  H01L29/45

CPC分类号： H01L29/872 ,  H01L21/0274 ,  H01L21/8252 ,  H01L23/528 ,  H01L27/0814 ,  H01L29/0657 ,  H01L29/0661 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/452 ,  H01L29/475 ,  H01L29/66212 ,  H01L29/8725

摘要： There is provided a semiconductor device configured to include a plurality of semiconductor units formed in a semiconductor layer. Each of the semiconductor units comprises a mesa portion; a Schottky electrode formed on the mesa portion; an insulating film formed continuously on another portion of the Schottky electrode that is nearer to an edge of an upper face of the mesa portion than one portion of the Schottky electrode, on a side face of the mesa portion, and on a surface of the semiconductor layer other than the mesa portion; and a wiring electrode formed on the Schottky electrode and the insulating film. An angle between the side face of the mesa portion and the surface of the semiconductor layer is 90 degrees. A part of the wiring electrode is placed between the insulating films formed on opposed side faces of adjacent mesa portions. The insulating films formed on the opposed side faces are interconnected on the surface of the semiconductor layer, such as to separate the part of the wiring electrode from the semiconductor layer.

公开(公告)号：US20180069135A1

公开(公告)日：2018-03-08

申请号：US15663520

申请日：2017-07-28

申请人： TOYODA GOSEI CO., LTD.

发明人： Kazuya HASEGAWA ,  Tohru OKA ,  Nariaki TANAKA

IPC分类号： H01L29/872 ,  H01L29/06 ,  H01L27/08 ,  H01L23/528 ,  H01L29/66 ,  H01L21/027 ,  H01L21/8252

CPC分类号： H01L29/872 ,  H01L21/0274 ,  H01L21/8252 ,  H01L23/528 ,  H01L27/0814 ,  H01L29/0657 ,  H01L29/0661 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/452 ,  H01L29/475 ,  H01L29/66212 ,  H01L29/8725

摘要： There is provided a semiconductor device configured to include a plurality of semiconductor units formed in a semiconductor layer. Each of the semiconductor units comprises a mesa portion; a Schottky electrode formed on the mesa portion; an insulating film formed continuously on another portion of the Schottky electrode that is nearer to an edge of an upper face of the mesa portion than one portion of the Schottky electrode, on a side face of the mesa portion, and on a surface of the semiconductor layer other than the mesa portion; and a wiring electrode formed on the Schottky electrode and the insulating film. An angle between the side face of the mesa portion and the surface of the semiconductor layer is 90 degrees. A part of the wiring electrode is placed between the insulating films formed on opposed side faces of adjacent mesa portions. The insulating films formed on the opposed side faces are interconnected on the surface of the semiconductor layer, such as to separate the part of the wiring electrode from the semiconductor layer.

公开(公告)号：US09859447B2

公开(公告)日：2018-01-02

申请号：US15090966

申请日：2016-04-05

申请人： LITE-ON SEMICONDUCTOR CORP.

发明人： Shih-Han Yu ,  Sung-Ying Tsai ,  Yu-Hung Chang ,  Ju-Hsu Chuang ,  Chih-Wei Hsu

IPC分类号： H01L29/872 ,  H01L21/265 ,  H01L29/06 ,  H01L29/47 ,  H01L29/66

CPC分类号： H01L29/872 ,  H01L21/265 ,  H01L29/0619 ,  H01L29/0661 ,  H01L29/47 ,  H01L29/66143 ,  H01L29/8725

摘要： A diode device and manufacturing method thereof are provided. The diode device includes a substrate, an epitaxial layer, a trench gate structure, a Schottky diode structure and a termination structure. An active region and a termination region are defined in the epitaxial layer. The Schottky diode structure and the trench gate structure are located in the active region and the termination structure is located in the termination region. The termination structure includes a termination trench formed in the epitaxial layer, a termination insulating layer, a first spacer, a second spacer and a first doped region. The termination insulating layer is conformingly formed on inner walls of the termination trench. The first and second spacers are disposed on two sidewalls of the termination trench. The first doped region formed beneath the termination trench has a conductive type reverse to that of the epitaxial layer.